Session Index

S1. Nanophotonic Materials and Devices

Nanophotonic Materials and Devices III
Saturday, Dec. 2, 2023  10:45-12:00
Presider: Prof. Ya-Ju Lee (National Cheng Kung University, Taiwan) Prof. Hui-Hsin Hsiao (National Taiwan University, Taiwan)
Room: 92119 (靄雲廳) (1F)
10:45 - 11:15
Manuscript ID.  1084
Paper No.  2023-SAT-S0103-I001
Invited Speaker:
Hui-Hsin Hsiao
All-dielectric metasurfaces based on toroidal and quasi-bound state in the continuum resonances in sensing and nonlinear applications
Hui-Hsin Hsiao, National Taiwan University (Taiwan)

We experimentally demonstrated an unprecedented simple way to excite strong and broadband toroidal dipole (TD) response in the optical regime using dielectric metasurfaces upon plane-wave excitation. The peculiar electromagnetic portrait of TD metamaterials leads to an ultrahigh sensitivity for local refractive-index sensing. In addition, the effect of the coupling between TD and magnetic dipole (MD) moments on the nonlinear third-harmonic generation (THG) was investigated. A strong THG enhancement was found at the generalized Kerker effect, referring to the constructive interference between the total electric dipole (the sum of electric dipole and TD moments) and the MD mode. In order to further narrow down the resonant linewidth, several asymmetric structures such as tilted nanorod pairs and asymmetry kite-shaped nanopillars were designed to excite high quality factor resonances based on the concept of quasi-bound state in the continuum (quasi-BIC) and applied to sensing and nonlinear signal conversion.

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11:15 - 11:30 Award Candidate (Paper Competition)
Manuscript ID.  0307
Paper No.  2023-SAT-S0103-O001
Ai-Yin Liu Third Harmonic Generation Enhanced by Quasi-Bound States in the Continuum in All-Dielectric Metasurfaces
Ai-Yin Liu, National Taiwan University (Taiwan); Jou-Chun Hsieh, National Taiwan Normal University (Taiwan); Hui-Hsin Hsiao, National Taiwan University (Taiwan)

The quasi-Bound States in the Continuum (quasi-BIC) is a resonance characterized by ultrahigh quality factor (Q-factor) with strong near-field distributions. We designed periodic amorphous silicon kite-shaped nanopillar arrays to achieve Fano-lineshaped quasi-BIC resonance supported by magnetic dipole (MD) and electric quadruple (EQ). Varying the asymmetry parameters of the kite-shaped structure leads to dramatic Q-factor variations and strong field confinement, which is beneficial for boosting nonlinear effects for third-harmonic generation (THG). The simulated (experimental) TH signal reaches more than four orders (one order) of magnitude enhancement at the quasi-BIC resonant frequency. This approach offers a platform for realizing tunable nonlinear metasurfaces.

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11:30 - 11:45 Award Candidate (Paper Competition)
Manuscript ID.  0549
Paper No.  2023-SAT-S0103-O002
Chia-Kai Lin Unveiling Carrier Recombination Dynamics of Near-band Edge States in 2D PEA2PbBr4 Perovskite
Chia-Kai Lin, Sheng-Chan Wu, Cheng Liu, Hsin-Min Cheng, Hsu-Cheng Hsu, National Cheng Kung University (Taiwan)

Two-dimensional perovskites have become the trending materials for various photoelectric applications because of their excellent optoelectronic performance. However, the formation of self-trapped exciton attributed to the strong exciton-phonon (E-P) interaction in 2D perovskites, affects the optoelectronic performance significantly. Here, various optical spectroscopy analyses study the influence of E-P interaction on carrier dynamics for phenethylammonium lead bromide (PEA2PbBr4). Results suggest the strength of E-P interaction is relative to the residual strain of thin films. Moreover, the numerical fitting result of time-resolved photoluminescence (TRPL) shows the reduction in E-P interactions further enhances the recombination process of free excitons.

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11:45 - 12:00 Award Candidate (Paper Competition)
Manuscript ID.  0866
Paper No.  2023-SAT-S0103-O003
Jia-Zheng Lin Optically-Pumped GeSn Micro-Disk Lasers for Mid-infrared Silicon Photonics
Jia-Zheng Lin, Wei-Cheng Hsu, Guo-En Chang, National Chung Cheng University (Taiwan)

We demonstrated GeSn micro-disk monolithically-integrated on silicon substrate. The introduction of sufficient Sn (~10%) into the GeSn active layer successfully transfer the material into a direct-bandgap material. High-Q micro-disk cavity was fabricated. Under optical pumping, lasing action was achieved with a lasing wavelength of 2201 nm up to 120 K. These developed GeSn micro-disk lasers provide a practical solution for compact light sources for silicon photonics.

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