Session Index

The resonant waveguide gratings (RWGs) with in and out couplers have been demonstrated to perform selective color-filtering and beam steering. However, RWGs with forward design suffers lower efficiency that limit the applications. Here, we design a metasurface which composed of titanium dioxide RWGs on the glass substrate working at red, yellow, green, and blue wavelengths, simultaneously. And we improve the diffraction efficiency by using adjoint-based topology optimization. The diffraction efficiency of simulation is up to 77% with the Q-factor reaching 1367. Such a beam steering device opens a new paradigm for applications, including see-through optical combiners and augmented reality platforms.

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In this work, we deliberately fabricate a heterogeneous array of Al nanocaps on a wide-bandgap semiconductor of GaN truncated nanocones, and then present a multifunctional plasmonic sensor for excellent UV photodetection and gas sensing. As a UV photodetector, we show maximum responsivity (1.8 × 108 AW-1) and detectivity (1.2 × 1018 Jones) at the resonance wavelength of 355 nm, which is based on our knowledge, the highest detectivity among GaN-based UV photodetectors. As a gas sensor, we detect a gas of NO2, and provide a superior response of 28% and a detection limit of 500 ppb, respectively

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We demonstrated low temperature operation of GeSn waveguide photodetectors operating in 2µm wavelength band for advanced sensing applications such as quantum computing. Performance parameters such as optical response, dark current, cut off wavelength of fabricated device is analyzed at low temperature which open the avenue of advanced applications of silicon photonics devices in quantum technologies.

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From the observation of the black pattern in the electroluminescence image under different stored conditions, we verify the degradation mechanism of perovskite light-emitting diodes. Here, we provide an alternative way to suppress device degradation and emphasize the importance of metal electrodes. Finally, we suggest that quai-2D can reduce this degradation of intrinsic properties and point out Ag - stable cathode metal.

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The development of micro and nanolasers is advancing through innovative concepts like Whispering Gallery Modes (WGMs) and Bound States in the Continuum (BICs). WGMs offer efficient light confinement but limited small radii. BICs, on the other hand, enhance Q factors by suppressing out-of-plane radiations, enabling chip-scale nanolasers with structured light emission, opening new possibilities for photonics applications.

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We numerically investigate the second-harmonic generation (SHG) efficiency of a silver plasmonic two-wire transmission-line. The intrinsic material property of silver enables greatly extended SHG coherence length between a particular set of propagating surface plasmon modes.

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Recently, hexagonal WS2 (h-WS2) with triangular heterogeneous defect domains show the promising results in valley polarized emission at room temperature. By illuminating WS2 with circularly polarized light and measuring the circularly polarized emission, the PL intensity is significantly difference at two circularly polarized emission with same circularly polarized light. In this work, we proposed monolayer (h-WS2) shows great selectively valley-polarized photoluminescence (PL) by combining with plasmonic-nanostructures. Chiral plasmonic metasurfaces are proposed combining with h-WS2 to strongly enhance the circular polarized selective of PL.

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Phase-change materials (PCMs) provide a specific combination of properties. The binary semiconducting chalcogenide Sb2S3 is consider one of the promising candidates, especially its intrinsic high refractive index, low loss and wide bandgap properties, in near infrared (NIR). Here, the Sb2S3 transformation from amorphous to crystal state embedded between the distribute Bragg reflector (DBR) and metal layer. At the interface between DBR and metal layer in specific parameter, Phase-change Tamm plasmon–polariton (PC-TPP) resonance could be produce. The PC-TPP resonance has a 70 nm modulation wavelength. Also, the resonance achieves around 100 nm-shifted in NIR at the proper incident angle.

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Nanowire (NW) lasers has great potential in the field of optoelectronics. Nevertheless, tunning threshold usually need complicated fabrication process or extra energy doping. The carrier in monolayer WS2 can diffuse into the NW that can decrease the threshold of the NW lasing. Here we propose that put NW on monolayer WS2 and control the carrier density by modulating gating voltage. It indirectly affects the transformation of carrier from WS2 to NW. Eventually achieve the purpose of tuning InP NW lasing.

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We study thermal emission from a one-dimensional photonic crystal with an ensemble of two-level atoms.
Both light and matter are treated quantumly. The matter is modeled as an ensemble of two-level atoms, where the equilibrium population of electrons is the Fermi-Dirac distribution. The dynamics of photon energy density inside and outside the photonic crystals are investigated. The conditions and evolution of super-Planckian radiation are discussed.

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Here we theoretically explored the biosensing application of the Rabi splitting (RS) induced by the strong coupling of surface plasmon polaritons (SPPs) and Tamm plasmon states (TPs). Previously, plasmonic biosensors were mostly performed by a pure plasmonic mode. However, we figured out that with the spectral integration method the surface sensitivity in the SPP and TPs generated RS region is about 1.32 times that in the pure SPP region. This indicates that while strong coupling weakened the original SPP, the original TPs split the electromagnetic fields to form new TPs-SPP modes, thereby enhancing the evanescent field for sensing applications.

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We investigated the influence of mis-orientated GaAs (111)B substrates on the growth of epitaxial I-III-VI2 CuInSe2 chalcopyrite thin films. The epitaxial thin film exhibited several different features due to the availability of step and kink sites. The cmposition of the epitaxial film was in range of Cu-rich to Cu-poor on the identical GaAs (111)B substrate depending on the off-angle. A step flow growth mode was proposed that linear growth in the kink sites along [110] step and subsequently two-dimensional step flow (112) of chalcopyrite grew in Cu-poor region. The influence of off-angle substrate was significant for the epitaxial growth.

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In this study, oxygen plasma etching was performed to roughen the surface structure of an Al-doped ZnO (AZO) seed layer. The distribution of Ag nanoparticles was optimized to improve the characteristics of a film and facilitate its application as a touch sensing electrode. As the result, the film’s resistance was 3.21 × 10−3 Ω-cm, its SE was 45.04%–52.48%, and its ST error was within 7.44%.

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In this study, Ga-doped Zinc Oxide (GZO) had been used as material to apply on touch sensing. In addition, touch sensing properties of the GZO thin films are further improved by depositing different GZO layers with the nitrogen-mediated crystallization (NMC) as buffer layers. Finally, the thin film structure as GZO (200 nm)/NMC GZO (100 nm)/ PC plastic substrate was deposited in the N2/Ar flow ratio of 1/8 has optimum touch sensitivity, and is enhanced as 6.12% from 1.046 to 1.110 compared to the pure GZO (300 nm) thin film.

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In this study, RF magnetron sputtering was used to deposit Zinc Oxide (ZnO) nanofilms and Copper Oxide (CuO) nanostructures, and firstly the sputtering power was adjusted to study the structural changes of ZnO nanofilms surface porosity. By optimizing the process parameters and incorporating the CuO nanostructure, the sensing characteristics of the ZnO thin film can be improved and the lower work temperature CO gas reaction had been done.

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In this study, radiofrequency (RF) magnetron sputtering was applied in the deposition of a Zinc Oxide (ZnO) thin film, to improve the photoelectric properties of the ZnO thin film, inclined process was used to modify the thin-film deposition process. Specifically, the intermittent number (IN) and intermittent time (IT) were first adjusted to facilitate the formation of the thin film before the inclined fabrication. After the optimal angle of inclination was determined, rapid thermal annealing was used to further optimize the structure of the deposited thin film.

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Melting methods are used to prepare I-III-VI2 CuInSe2/CnGaSe2 ordered vacancy compounds (OVC). Three pure elements copper, indium or gallium and selenium are put into quartz tubes and sealed, and then melted in a high-temperature furnace. Ternary chalcopyrite crystals of Cupoor Cu1In1.6Se2.8 / OVC Cu1In3Se5 and Cu-poor Cu1Ga1.6Se2.8 / OVC Cu1Ga3Se5 are obtained. The grains sizes of these ternary compounds are larger than 400µm by SEM observation. XRD analysis shows that these compounds have strong (112) preferred orientation. The surfaces of the ordered vacancy compounds Cu1In3Se5 and Cu1Ga3Se5 are composed of (112)A [metal terminated surface] and (112)B [selenium terminated surface].

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In this research, we investigated the gas sensing behavior of two fluorene-based derivatives at different annealing temperatures. These derivatives were employed as the sensing materials for gas sensors featuring a vertical channel nano-porous diode structure. Our study revealed that these materials exhibited remarkable sensitivity to NO, with a detection limit below 100 ppb. This promising finding suggests their potential application in diverse fields, such as industrial and medical settings.

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The absorption spectrum of a metal nano-array is mainly determined by the structural shape, size, and environment. In this work, through numerical simulations, we aim to enhance the absorption spectrum using the multilayer hyperbolic metamaterials, thereby reducing the size dependence of the array structure. This approach offers the potential to precisely tune the metal nano-arrays absorption properties, thereby benefiting various applications in sensing and imaging.

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The reflection spectra presented the effects of attached metal nanoparticles adjacent to the TiO2 nanoparticles. The high refractive index of TiO2 nanoparticles breakdown the main plasmonic resonance modes on Ag nanoparticles and suppresses the main resonance peaks of the Ag nanoparticles. The homogeneously deposited TiO2 nanoparticles randomly scattered the incident light and broadened the absorption peaks of various samples.

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For quantum photonic applications, such as quantum communication, optical quantum information processing, and metrology, solid-state sources of single-photon emitters are highly needed. We report an effective method for generating single-photon emission in mechanically exfoliated hBN flakes by annealing. We compare the result of nitride-annealing and argon-annealing to identify which type of the defect we induced. The result of single-photon emission shows high stability and brightness. Our results provide an effective method for generating room-temperature single-photon emitters in 2D hBN

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We study thermal radiation in a cavity. Such a system consists of light and matter. We assume that the matter is in thermal equilibrium and possesses a clearly defined temperature. The matter is modeled as dipoles of which the polarizations are gaussian random numbers and their spectra adhere to the black-body radiation principles. We implement the systems with the finite-difference time-domain (FDTD) method. This approach is flexible regardless of geometries and is advantageous in studying temporal behaviors. We simulate thermal radiation of one-dimensional and two-dimensional cavities. The differences of the temporal dynamics between one-dimensional and two-dimensional cavities are also discussed.

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We present the synthesis of plasmonic silver nanopopcorns by an one-step solution phase method for the antiobiotic detection of nitrofurazone. The hotspots formed in the nanoscale protrusions and crevices possesses strong electric field to enhance the Raman signal intensity of analyte through electromagnetic mechanism. The produced flexible SERS substrate owns superior detection performance of low limit of detection 1.18×10-9 M and high enhancement factor 2.52×108 for the detection of nitrofurazone.

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Quantum dot light-emitting diodes (QLEDs) is a promising candidate of new generation for flat-panel displays for its bright and saturated emission colors. In the experiment, the effect of double hole transport layers (HTLs) consisting of poly-TPD and TFB on the performance of blue QLEDs was demonstrated. Compared to the QLED with single hole injection layer of poly-TPD, the QLED with double HTLs was with a turn-on voltage of 3.0 V, a maximum brightness of 121580 cd/m2 and current efficiency of 10.85 cd/A.

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This study presents a GaN-based metalens designed for dual focusing through asymmetric spin-orbit interaction (A-SOI). We optimize meta-atom parameters to achieve crucial 2π phase convergence, ensuring high diffraction efficiency. Thanks to the merits of the geometric phase, the so-called PB phase, which gives the unit cell another way to manipulate phase under both right and left circular polarization. This metalens exhibits the exceptional ability to focus light at distinct positions on the optic axis. This capability shows significant potential, particularly in the field of high-resolution microscopy, indicating the possibility of advancing imaging technology.

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The promising hybrid photodetector design was realized through the incorporation of PEDOT:PSS tunnel layer with SiOx/Si nanowires (SiNWs) (Fig.1), which went beyond the intrinsic limitation of band-gap associated photosensing characteristics of conventional Si semiconductors toward revolutionarily turning into wavelength-selective features (Fig.2). The optical simulation results (Fig.3) demonstrate that possibly minimizing the internal reflection of incoming lights, which benefitted the improvement of wavelength-selective photoresponses. We anticipated the design strategy along with detailed explorations on the spectral selectivity of detectors could open up the promising employment of advanced optoelectronic devices, optical communication (Fig.4) and other functional applications.

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In this study, we investigated a photonic crystal microdisk cavity laser to eliminate the degenerate modes and achieve single-mode lasing action. The lasing properties of the whispering gallery modes including lasing spectral, light-in-light-out curves, and lasing linewidth were characterized in the study. Additionally, we analyzed the lasing linewidth by varying the hole radius to verify the single mode.

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In conventional microscopes or endoscopes, the depth of information that can be observed from samples is limited. By integrating varifocal metalens into microscope or endoscope systems, observation at different depths of the sample can be achieved, enabling the reconstruction of three-dimensional images. In this work, simulation of the focal-field distribution of varifocal metalens is performed using FDTD simulation software. The simulation results demonstrate that the focal position can be tuned by rotating the relative angle between the component metasurfaces. The present results can be utilized for parameter optimization and pre-manufacturing validation.

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This study focuses on the destructive etching of semi-insulating 4H-SiC wafers using molten KOH, which were generated by the PVT method. The wafers were then analyzed using optical microscopy to examine defects, surface morphology, and dimensions. The etching depth was measured using a granite measuring stand, while the profile and size of the etch pits were observed using laser scanning confocal microscopy. Through precise control of etching temperature and time, two typical defects, TSD and MP, were confirmed on the industrial-grade semi-insulating 4H-SiC Wafer.

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The reflection spectra presented the effects of thermal treatment by microwave heating on the samples of fluoride-assisted galvanic replacement reaction (FAGRR) synthesized Au or Ag dendritic nano forests (DNFs) on Si substrate. The samples of dense Au samples presented increased optical reflection after microwave thermal treatment while the Ag samples presented a slight decrease.

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In this work, we present a THz source of phosphorus doped GeSn photomixer. It can generate continuous-wave.And GeSn in process is much cheaper than III-V group material.The result tell us that GeSn can become a new material for terahertz technology in
the future.


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