Session Index

Dissipative soliton resonance in a unique mode-locking regime, which allows
generating rectangular-shaped pulses with high energies directly from the laser resonator. We
present the first demonstration of achieving stable multipulsing in a dissipative soliton
resonance laser utilizing a double-clad ytterbium-doped active fiber. By carefully tailoring the
resonator parameters we were able to control the number of pulses generated in a single burst
by simply adjusting the pump power. Parameters and the stability of the generated pulses will
be presented and discussed.

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This study investigates the impact of metal contact misalignment in Vertical-Cavity Surface-Emitting Laser (VCSEL) fabrication on device optoelectronic properties, focusing on mode hopping. Experimental results reveal that imprecise alignment during photolithography causes significant fluctuations in light-current-voltage (L-I-V) behavior, particularly severe kinks in the light output power to drive current (L-I) curve. This phenomenon from laser light path obstruction, where misaligned annular metal contact blocks the output laser beam, leading to optical field distribution changes. The research findings emphasize the critical role of precision in VCSEL fabrication for stable mode characteristics.

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In this study, we purpose novel 3D display technology. We used a self-scattered mechanism of laser-induced plasma to create a monochromatic point cloud in the air. By analyzing the angular distribution and color of the scattered light, try to find the best condition for human eyes. This method can create 3D images without any other medium, and achieve true colorful 3D display.

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We report the observation of dynamical transition of multi-periodic laser pulses emitted from an intracavity second harmonic pulsed laser resonator which is built with Nd:YVO4 laser crystal and KTP nonlinear crystal via type-II phase matching scheme. Green laser pulses oscillate periodically and transformed among different types oscillatory patterns possibly due to the interplay between the saturable absorption and nonlinear frequency conversion.

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The ultrafast laser direct writing depressed waveguide in MgO:LN crystal was demonstrated. The depressed waveguide was based on a three-ring structure with diameters of 30 to 50 um, and processed by the pulse energy of 0.45 uJ, pulse repetition rate of 30.23 kHz, as well as annealed temperature of 150 degree. The measured propagation loss of no polarization was reached 0.73 dB/cm.

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This paper presents a high-brightness and high-power laser source, which is based on wavelength beam combining technology using full-bar diode laser stacks. The designed WBC system is demonstrated with 213 W output power and a central wavelength of 975 nm. The combined beam has BPPs of 5.01 mm-mrad on the slow axis and 5.74 mm-mrad on the fast axis. The smile effect of the diode laser and the thermo-optical effect are found to affect the beam quality of the combined beams. The results are helpful for systematically analyzing the wavelength beam combining system under a full-bar diode laser stack scheme.

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: The growth of silver nanoflowers using silver nitrate (AgNO3) and ascorbic acid as reducing agent is studied in this report. The silver nanoflowers caused by photo-reduction are allowed to grow on thin gold film of around 100 nm thickness. Here, pulsed femtosecond laser is used for the generation of hot electrons from the gold film to induce the formation of silver nanoflowers. The EDX analysis of the specimen confirms the presence of both silver and gold. This is to say that these nanoflowers are bimetallic nanostructures.

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This study utilizes a specific period PQ/PMMA VBG as an external resonant cavity for a semiconductor laser to achieve single longitudinal mode operation. Additionally, by modulating the voltage to control the liquid crystal, we introduce it into the external resonator cavity, creating a frequency-modulated continuous-wave laser source.

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In this paper, the nonlinear dynamics of the pulsed injected semiconductor lasers are studied. Optical frequency combs are generated by the period-one states in the optical spectra of the pulsed injected semiconductor lasers. The detailed characteristics of the optical combs under different operational parameters are also discussed.

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In this report, we investigate the nature of Amplified spontaneous emission in a maturely studied perovskite material. By studying the carrier dynamics and resolving the relaxation processes, we provide a more complete model which contribute to a deeper understanding of the underlying mechanisms and provide insights for optimizing the design and fabrication of perovskite-based lasers.

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Two-photon excitation microscopy for live biological samples requires a fast scanning speed, necessitating a high repetition rate light source. In this study, we successfully double the repetition rate of 2-W, 940-nm pulses from 2 MHz to 4 MHz using a multipass cell. The repetition-rate-doubled pulses still maintain a great beam profile, and the spectrum remains unchanged.

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We investigated the bendable band-edge laser from dye-doped cholesteric liquid crystal film (DD-CLCP film) by incorporation of chiral molecules (ISO-(6OBA)2) with nematic diacrylate monomer (RM257) and glued onto the PET substrates. Through mechanical stress, the band-edge lasing was generated under bending conditions and showing slight red-shift owing to the increase the pitch of helical structure.

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High harmonic generation is driven by short-wavelength electromagnetic waves in laser-plasma interactions. Its conversion efficiency is determined by the relative phase between the driving laser field and the harmonic field, which is affected by various dispersive effects. Therefore, we mainly proposed to achieve the dispersion balance between intrinsic dipole phase variation, Geometrical phase shift, and plasma dispersion under strong ionization regime. The scheme will be verified by numerical simulation for the HHG order 169th by 405-nm laser corresponding to the water window X-ray, i.e. 2.39-nm.

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We report on terahertz emission from topological material EuCd2As2 single crystals under ultrafast optical excitation with different polarization. Nonzero circular dichroism of the emitted THz radiation were observed as the polarization of optical pulses switch from right circular polarization to left circular polarization. The observed phenomena are coincident with circular photogalvanic effect. Our work demonstrates the potential applications of EuCd2As2 on opto-spintronics devices.

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This study demonstrate the CW(continuous wave) driven high power laser package which is with O-band and can used as CPO (co-package)’s light source. The laser diode is between the bottom submount and the upper submount for novel double-heat-flow to improve heat dissipation of the package. A stud bump is electrically connected to the second electrode of up submount and p-pad of DFB chip, heat dissipation, prevent the ridge damage.

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The DFB laser has been demonstrated by injecting an organic dye (PM597) solution into an empty polydimethylsiloxane (PDMS) microcavity structure. As pump energy increases above 6.3 J/cm2, the single lasing peak around 577 nm was excited with narrow linewidth around 0.949 nm. Under the different excited location on the cell, the wavelength tuning from 568.5 nm to 579.4 nm, with a total tuning range of 10.9 nm has been demonstrated.

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In this study, we use quantum transport modeling to explore the impact of gate-induced superlattices on graphene's band structure. At low magnetic fields, we examine carrier dynamics and simulate transverse magnetic focusing, revealing strong agreement with miniband structures from the continuum model. At high magnetic fields, our four-probe resistance matches the Hofstadter butterfly spectrum. Our modeling provides insights into miniband structures, applicable to various superlattice geometries.

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Mode locking is absent and irregular pulsation phenomena are observed in a coherent optical feedback 803 nm semiconductor laser using a semiconductor saturable absorber mirror with 3% modulation depth in a 50 cm cavity. The average time interval between pulses is 267 ns under 26 mA driving current which is slightly above threshold current. It drops to 31 ns when driving current is increased to 37 mA, right before irregular pulsing can be distinguished. The pulse width, ranged from 1.25 to 3.9 ns, depends on the driving current in the range of 26 to 37 mA.

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