Session Index

This paper aims to investigate the widely accepted belief that polymer networks can stabilize LCs without deforming their structural characteristics such as tilt and twist angles. However, uncertainties remain regarding whether this stabilization affects the structural variations. To address this, we employed a twisted-hybrid LC (THLC) to analyze the impact of the polymer network on tilt and twist angles. Additionally, we explored the influence of the doping concentration of DMPAP on the LC structure. In this research, it can be concluded that the presence of DMPAP affects the twist angle, while the polymer network affects the tilt angle.

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In order to improve the optical performance of cholesteric liquid crystal elastomers (CLCEs), we have proposed a hyper-reflective CLCE film consisting of a two-layer structure. The two CLCE layers with helical structures of opposite handedness have the reflection spectra at the same position, but they reflect circularly polarized light with different handedness, resulting in high reflectivity. The results show that the reflection bandwidth of the original CLCE layer is broadened by the added CLCE layer.

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In this study, blue quantum dot light-emitting diodes (QLEDs) comprised of
inorganic/organic hybrid charge injection/transport layers with solution-process was reported.
Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was used as hole
injection layer (HIL), Poly-TPD as hole transport layer (HTL) and magnesium doped zinc
oxide nanoparticles (MgxZn1-xO NPs) with different magnesium mole fraction served as
electron transport layer (ETL) prepared by synthesis nanoparticles method were demonstrated.
The maximum luminance (Lmax) of the fabricated QLEDs can be up to 48,865 cd/m2 with
current efficiency of about 2.4 cd/A.

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Gold nanoparticles (NPs) are adopted to enhance the photoluminescent properties of perovskite quantum dots (QDs) and the localized surface plasmon resonance induced by the NPs effectively increases the efficiency of radiative recombination. The Au NPs are integrated as a photopatternable color conversion layer for micro-light-emitting diodes. The presence of Au NPs in the thin films does not affect the photolithography process.

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In this study, we fabricate different array sizes of square-shape Micro-LEDs and compare them with their performances, including electrical and photonic properties, to reveal a possible candidate of high power micro LED applications.

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Exciplexes, possessing similar characteristics with TADF emitters, have the potential to achieve a 100% IQE (Internal Quantum Efficiency), rendering them profoundly significant within the current research landscape. In this study, we extracted the donor component from a TADF material and combined it with two acceptor materials, CN-T2T and PO-T2T, to create exciplexes. Consequently, organic light-emitting diode (OLED) devices utilizing Donor:CN-T2T and PO-T2T blends as the emitter layer exhibited a maximum external quantum efficiency (EQE) of 9.39% and 11.03%, respectively.

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This study develops a spectrum generator for a 14-channel LED illuminator. Through genetic algorithms, a dataset is generated with corrected color temperature (CCT) of 3000K, 4000K and 5000K, and illuminance of 500 lx. The dataset includes lighting parameters such as CCT, Duv, general color rendering index (Ra) and circadian stimulus (CS), along with channel weights. Using this dataset, a neural network is trained. Results show that CS is affected by the blue-yellow color mechanism (b-y); the data of 4000K have lower CS than that of 3000K and 5000K. The spectrum generator can accurately produce spectra within the dataset’s parameter range.

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InGaN-based light-emitting diodes with insertion of a delta-InN layer in the quantum well are investigated and optimized numerically using APSYS. By adjusting the indium content and the width of single InGaN quantum well, the aim is to design an optimized structure that can achieve a red emission wavelength of around 650 nm and maintain a high wall plug efficiency. The simulation results show that increase of carrier overlap in the quantum well is the key to enhance the device performance. The best wall plug efficiency is achieved with a quantum well composition of In0.32GaN and a width of 1.5 nm.

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OLEDs offer flexibility, thinness, durability, and non-directionality. However, OLEDs still lag in efficiency and brightness compared to inorganic LEDs. Tandem OLEDs exhibit higher efficiency and lifespan with multiple electroluminescence units connected through charge generation layers (CGLs). Herein, our purpose is to develop high-brightness tandem white OLEDs. To design our tandem white OLEDs, we introduced multi-alternating organic heterojunction (OHJ) structures in the CGL. The conventional white OLEDs achieved a maximum efficiency of 16.1% and a brightness of 63379 cd/m². Tandem devices with CGL containing four OHJ pairs achieved an efficiency of 34.5% (76.7 cd/A) and a brightness of 78657 cd/m².

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In this work, we demonstrate a improvement method of green laser crystallization (GLC) for poly-Si crystallization by depositing Ni before GLC. By increasing the grain size, the device exhibits higher field effect mobility (μFE) of 26.03 cm2/V-s, lower threshold voltage (VTH) of -0.4V than the device without depositing Ni before GLC, and remains great on/off current ratio (ION/IOFF) of 1.75e7.

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In this work, a bottom gate TFT based on the sputter-deposited ITZO is investigated. For seeking the improved electrical properties, the variation of annealing temperature and oxygen partial pressure will be analyzed respectively. At an oxygen flow ratio of 1.4% and under 350°C annealing temperature for 30 minutes, the device exhibits a maximum on-off current ratio (ION/IOFF) of 1.46×108, a high mobility of 22.0 V/cm2∙s, a nearly ideal sub-threshold (S.S.) swing of 65.5 mV/dec., and a low leakage current of 1.11×10-12 ampere. Clearly, the electrical characteristics is highly beneficial for the applications for ultra-high resolution VR/AR display technology.

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A subpixel rendering algorithm for GRGB micro-LED panel was proposed. We designed a linear transformation that can render high-resolution images through low-resolution panels while maintaining the image quality. To mimic the human perception on image quality, we conducted a deep learning-based merit. The result shows the proposed algorithm has better performance.

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In this study, a high-reliability gate driver circuit (GOA) was designed using hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) for a 4.7-inch high-definition (1280xRGBx720) TFT-LCD panel. The gate driver circuit utilizes eight clock signals with a 50% signal overlap. This GOA circuit can provide both sequential square waves and simultaneous driving EM signals as inputs for the mini LED, resulting in a reduction in the number of ICs and signal usage, leading to cost savings and a smaller layout area. Finally, the proposed GOA underwent reliability testing and demonstrated excellent simulation results under strict simulation conditions (85°C and -40°C).

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This article proposed a new gate driver circuit using amorphous silicon (a-Si) for in-cell touch with time-division driving method (TDDM). Pre-charge node (Q node) could be pulled to the lowest level (VSS) during the touch period to prevent the long-term DC stress of driving TFT. The circuit could freely choose the touch stage. Therefore, the degradation of the node P[n] which is used to temporarily store the voltage during the touch stage could be evenly distributed. The simulation results show that the rising time and falling time are both less than 5us at 25 ℃.

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Micro light emitting diode (Micro-LED) display technology is considered the most promising display approach for the future. We have introduced the color conversion Micro-LED display, achieving a quantum yield and blue light absorption rate exceeding 70% and a conversion efficiency surpassing 50% through the integration of TiO2 nanoparticles (TiO2 NPs) with non-rare earth green luminescent materials. Our successful development of an efficient color conversion microarray allows for a single-color pixel density of up to 5080 PPI and a full-color pixel density of up to 2540 PPI. This significant research breakthrough offers a promising technological solution for manufacturing ultra-high-resolution Micro-LED displays.

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This study investigates the impact of baking temperatures on the temperature tolerance of fluorescent dye (DCJTB) in the fabrication of color conversion films (CCF). In the experimental range of 50 to 150°C, we measured the quantum efficiency and absorbance of the thin films at different baking temperatures to understand the thermal quenching behavior of DCJTB. The results indicate an irreversible thermal quenching effect of DCJTB at high temperatures, primarily due to a reduction in the radiative recombination rate of charge-transfer excitons. Notably, the film exhibits the highest blue light absorption rate at 90°C, resulting in the optimal photon conversion efficiency.

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Micro-light-emitting-diode (Micro-LED) display is the future trend in displays. In the past, Micro-LED displays were produced using mass transfer techniques, facing challenges in the manufacture and the high cost. In this work, photolithography is used to create a 5080PPI high-resolution and efficient color conversion array. The novel Color Purity Enhancement Film (CPEF) structure further improves color purity and gamut range, with a Full width at half maximum of about 15nm and a gamut of 144% DCI-P3. Compared to traditional mass transfer, this research offers lower production costs and faster manufacturing. The technology holds potential for application in the metaverse.

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Doping nanoparticles (NPs) and red-green color conversion materials into transparent negative photoresist enhances the conversion efficiency (CE). By using mature semiconductor manufacturing process technology, a 4 x 4 um pixel array of red and green colors can be created. In the study, the single-color pixel density reaches 5080 pixels per inch (PPI), and the full-color pixel density reaches 2540 PPI. This lays the foundation for subsequent high-efficiency and high-resolution full-color conversion technology.

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Near-ultraviolet organic light emitting diodes (OLEDs) were demonstrated with different dopant concentrations which showed a maximum external quantum efficiency (EQEmax) of 6.02% with electroluminescence (EL) emission peak of 394 nm and CIE coordinates of (0.161,0.042)

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High-quality large-area (4 cm2) perovskite CsPbBr2.5Cl0.5 doped with 2-amino-1,3-propanediol (APDO) material was prepared using post-hot casting annealing method. The photoluminescence wavelength of ADPO:CsPbBr2.5Cl0.5 perovskite shows cyan color at 508 nm. The ADPO:CsPbBr2.5Cl0.5 large-area perovskite LED exhibits a maximum luminance of 2660 cd/m2.

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Green InGaN-based nano-rod array light-emitting diodes (LEDs) has been demonstrated. Mono-layer of close-packed SiO2 sphere array with 250 nm diameter was used as the mask layer for the dry etching process. 50 um-diamer micro-LED with integrated nano-rods were fabricated through the ion-implantation process and top ITO layer. The electroluminescence (EL) emission wavelength was shifted from 513 nm for flat LED to 691.7 nm for nano-LED structure. The enlarging of the quantum confinement stack effect in the InGaN MQW active layers caused the redshift EL emission peak of the nano-rod LED.

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In this study, we employed an inorganic/organic hybrid charge injection/transport layer and solution process to fabricate red quantum dot light-emitting diodes. By using MgZnO nanoparticles with different magnesium mole fraction as the electron transport layer, we observed remarkable operation performance enhancement with highest luminance of 479,536 cd/m² and maximum current efficiency of 9.69 cd/A.

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In this work, influences of thin film encapsulation on light extraction of reflective 3D OLED pixels are considered by simulation studies, which unfortunately reveals strong reduction of the light extraction efficiency induced by TFE layers. As such, an additional angle-selective optical film between the pixel and the encapsulation layers is introduced to control the angular distribution of the light coupled into the encapsulation layers. As a result, TFE-induced losses can be substantially reduced to retain much of light extraction efficiency. The results of this study provide useful insights and guides for developing even more efficient and power-saving AMOLEDs.

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The research team has developed a color vision intelligent inspection aimed at human color discrimination. This system operates under the full-color gamut spectrum and features fast testing time, user-friendly operation, high sensitivity, and accurate detection of color blindness. The illumination system is equipped with a D65 light source with a power exceeding 100 Lux [1]. By passing light through a grating, it can generate 16 color sets for Farnsworth D-15 test, assessing color deficiencies comprehensively.
This innovative instrument can also simulate customized color correction glasses for patients, improving their condition through coating and wearing these glasses.


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In this paper, we reported a high-performance IZTO photo-TFT using heterojunction SubPc/Pentacene absorption layers. To reduce the operating voltage (VGS = -2 ~ 6 V and VDS = 3 V), we use high-k HfO2 as gate insulator. IZTO/SubPc/Pentacene heterojunction scheme can form well-organized band structure and interface characteristics in the visible band, to achieve a high responsivity of 25.5 A/W at 525 nm wavelength, and with a rise time of less than 50 ms and a fall time of less than 350 ms.

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The MAPbBr3 layer employed MAPbBr3 powder as the evaporation source, which was obtained from using MAPbBr3 bulk crystals prepared by the inverse temperature crystallization method. The devices exhibited the best quality and performance when a 20-nm-thick MAPbBr3 layer was used as the nucleation and hole transport layer. The rc-MAPbBr3/CsPbBr3 structure apparently boosted the carrier lifetime such that the injection holes and electrons quickly recombine and then transfer into photons and emissions. The champion luminescence and external quantum efficiency were 21850 cd/m2 at a bias of 7.0 V and 1.18% at a bias of 6.5 V, respectively.

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