Session Index

S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology I
Friday, Dec. 1, 2023  13:00-15:00
Presider: Prof. Fang-Chung Chen (National Yang Ming Chiao Tung University, Taiwan) Prof. Hao-Wu Lin (National Tsing Hua University, Taiwan)
Room: 92283 (2F)
13:00 - 13:30
Manuscript ID.  0646
Paper No.  2023-FRI-S0801-I001
Invited Speaker:
Gang Li
Advancing Organic Photovoltaics - active layer and potential applications
Gang Li, Hong Kong Polytechnic University (Hong Kong)

13:30 - 13:45 Award Candidate (Paper Competition)
Manuscript ID.  1058
Paper No.  2023-FRI-S0801-O001
Yu-Ting Chen Characterization of Open-Circuit Voltage Loss in Perovskite Solar Cells with Different Hole Transport Layers
Yu-Ting Chen, Tzung-Fang Guo, National Cheng Kung University (Taiwan)

In this study, we measured photovoltaic external quantum efficiency and electroluminescence external quantum efficiency of the devices to characterize the energy loss of open-circuit voltage in perovskite solar cells with different hole transport layers. The results show that the non-radiative recombination loss is the majority impact factor. Moreover, it is affected by the energy alignment between the hole transport layer and the perovskite layer. According to the results of photoluminescence and time-resolved photoluminescence, the non-radiative recombination contributes to the photoluminescence quenching effect in the interface between the hole transport layer and perovskite.

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13:45 - 14:00 Award Candidate (Paper Competition)
Manuscript ID.  0708
Paper No.  2023-FRI-S0801-O002
Galing Murokinas Improving Ternary Lead-Based Perovskite Solar Cell Performance through All-Vacuum Deposition Process
Galing Murokinas, Ming Chi University of Technology (Taiwan); Guan-Hung Chen, Yu-Chen Huang, Chih-Chien Lee, National Taiwan University of Science and Technology (Taiwan); Shun-Wei Liu, Ming Chi University of Technology (Taiwan)

In the pursuit of commercialization, a feasible strategy involves refining the vapor deposition process for producing perovskite thin films and transport layers, offers numerous remarkable advantages including precise control of layer thickness, exceptional homogeneity of the resultant thin film, and the ability to select appropriate materials and compositions. In this work, we employed an all-vacuum deposition process for the fabrication of MHP solar cells. As a result, the devices achieved remarkable performance, including an open circuit voltage of 0.95V, a short circuit current density of 21.02 mA/cm2, a fill factor of 68.32%, and a PCE of 13.64%.

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14:00 - 14:15 Award Candidate (Paper Competition)
Manuscript ID.  1042
Paper No.  2023-FRI-S0801-O003
Yi-Tsen Chen Optimization of PTAA/Perovskite Interface for Efficient Inverted Perovskite Solar Cells
Yi-Tsen Chen, Yi-Hong Lai, National Cheng Kung University (Taiwan), Academia, Sinica (Taiwan); Yu-Ting Chen, Pi-Yun Hsiao, Academia, Sinica (Taiwan), National Cheng Kung University (Taiwan); Peter Chen, National Cheng Kung University (Taiwan); Tzung-Fang Guo, National Cheng Kung University (Taiwan), Academia, Sinica (Taiwan)

In inverted structure perovskite solar cell, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) is considered the best choice for the hole transport layer (HTL), regardless of optical properties or electrical conductivity. However, its hydrophobic surface impedes the development of perovskite thin films. Here, discuss the modification of the PTAA surface, aimed at enhancing device efficiency. This involves addressing the issue of incomplete perovskite film coverage by adjusting the perovskite mixed solvent. Additionally, we utilize PFN-Br to modify the PTAA/Perovskite interface, effectively reducing perovskite defects and achieving the best device efficiency values of VOC=1.10 V, JSC=21.38 mA/cm², FF=77.95 %, and PCE=18.27 %.

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14:15 - 14:30 Award Candidate (Paper Competition)
Manuscript ID.  1063
Paper No.  2023-FRI-S0801-O004
Pi-Yun Hsiao Atomic Layer Deposition Free Process for Sputtering Buffer Layer in Large Area Bifacial Perovskite Solar Cells and Tandem Solar Cells
Pi-Yun Hsiao, Yu-Ting Chen, National Cheng Kung University (Taiwan), Academia, Sinica (RCAS) (Taiwan); Yi-Tsen Chen, Ming-Xun Jiang, Tzung-Fang Guo, Academia, Sinica (RCAS) (Taiwan), National Cheng Kung University (Taiwan); Chih-Wei Chu, Academia, Sinica (RCAS) (Taiwan); Peter Chen, National Cheng Kung University (Taiwan)

We successfully use polyethylenimine ethoxylated (PEIE) as a buffer layer to mitigate ion bombardment damage during the sputtering of transparent conductive oxide (TCO) in our process. We fabricated large-area bifacial devices, achieving PCE of 15.21 %, and produced a perovskite/silicon tandem solar cell, which reached PCE of 16.51%.

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14:30 - 14:45 Award Candidate (Paper Competition)
Manuscript ID.  0573
Paper No.  2023-FRI-S0801-O005
Karthikeyan Embrose Enhancing Perovskite Solar Cell Efficiency through Guanidine Hydrochloride Surface Modification
Karthikeyan Embrose, Thangaraji Vasudevan, Lung-Chien Chen, National Taipei University of Technology (NTUT) (Taiwan)

In this study, researchers employed guanidine hydrochloride (GuHCl) for surface modification of Perovskite Solar Cell (PVK-SC) films. Theoretical simulations of the resulting PVSK:GuHCl exhibited a strong correlation with experimental data, indicating significant performance improvements in the devices. Theoretical analysis results indicate that passivating the surface states of the perovskite layer could improve the device’s performance. Initial tests on perovskite devices without a passivation layer displayed impressive attributes, including a high-power conversion efficiency of 16%. Therefore, there is a strong belief that passivating with PVK:GuHCl will lead to even higher photoconversion efficiency and enhanced stability in solar cell devices.

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14:45 - 15:00 Award Candidate (Paper Competition)
Manuscript ID.  0624
Paper No.  2023-FRI-S0801-O006
Sin-You Chen Applying metamaterial prefect absorber to an indoor solar photovoltaics
Sin-You Chen, Tsung-Yu Huang, Ming Chi University of Technology (Taiwan)

Here, we would like to integrate metamaterial absorbers to an indoor solar cell. The total absorption and absorption integral values for the integrated device and the ITO cell are 3.42/276 and 3.45/281, respectively. The difference in the two values is only 0.87% and 1.78%, respectively. With minimal differences in optical absorption, our proposed integrated device features a smaller measured sheet resistance 4.42/□, respectively and benefits from the higher flexibility and lower metal cost. Therefore, we believe our proposed metamaterial perfect absorber could be a promising candidate for transparent conductive electrodes in future indoor low-light photovoltaic cells.

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S8. Thin Film and Photovoltaic Technology

Poster Session I
Friday, Dec. 1, 2023  13:30-16:30
Room: Building of Electrical Engineering (電機系館) (B1)
Award Candidate (Paper Competition)
Manuscript ID.  0676
Paper No.  2023-FRI-P0801-P001
Ping-Yu Lin Anti-reflective Light Modulation of Plasmonic In-NPs Effects on Triple-Junction GaAs Solar Cells
Ping-Yu Lin, National Taipei University of Technology (Taiwan), National Cheng Kung University (Taiwan); Wen-Jeng Ho, National Taipei University of Technology (Taiwan); Hung-Pin Shiao, Win Semiconductor Corp (Taiwan)

Embedding single and double indium nanoparticles (In-NPs) sheets within a 52-nm
thick TiO2 anti-reflective layer, the conversion efficiency of InGaP/GaAs/Ge triple-junction
solar cells (3J-SCs) is significantly enhanced due to plasmonic effects. The distance between
In-NPs sheet and 3J-SC effecting on the conversion efficiency was also investigated.
Therefore, the cell with double In-NPs sheets, which with the distance of 10 nm and 42 nm
away from the surface of 3J-SC, obtained the lowest reflectance and highest EQE, as well as
resulting in a remarkable 33.22% increasing in conversion efficiency, due to the combination
of near-field and far-field plasmonic effects.

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Award Candidate (Paper Competition)
Manuscript ID.  0509
Paper No.  2023-FRI-P0801-P002
Chin-An Hsu Optoelectronic Properties of (PEA)2PbI4 Two-Dimensional Perovskite Nanoflakes
Chin-An Hsu, Ti-Kai Chou, National Taiwan University (Taiwan); Yu-Chiang Chao, National Taiwan Normal University (Taiwan); I-Chun Cheng, National Taiwan University (Taiwan)

Two-dimensional (2D) perovskites have been regarded as potential active materials for optoelectronic devices. Perovskite flakes at nanoscales in thickness have shown distinct optoelectronic properties, such as higher fraction of radiative recombination, in comparison to their bulk counterparts. However, nanoflakes of 2D perovskites are seldom demonstrated and investigated. In this research, we successfully fabricate PEA2PbI4 (2D) Ruddlesden-Popper (RP) perovskite nanoflakes of 11 nm by using a facile three-step method, and their optoelectronic and field-effect characteristics are studied.

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Award Candidate (Paper Competition)
Manuscript ID.  0932
Paper No.  2023-FRI-P0801-P003
Li-Cheng Huang Interpreting Electrochemical Impedance Spectroscopy of Spin-coated Electrodes for Electrocatalytic Water Splitting
Li-Cheng Huang, Yu-Wei Lin, Chun-Wei Chang, Kai-Hsiang Tsou, National Yang Ming Chiao Tung University (Taiwan); Changsik Choi, Institute for Advanced Engineering (Korea); YongMan Choi, National Yang Ming Chiao Tung University (Taiwan)

Advanced green energy technologies have attracted wide attention due to gas and oil depletion. It is vital to generate green hydrogen at large scales and convert it to electricity using a fuel cell. The electrocatalytic activities in hydrogen and oxygen evolution reactions using nanoscale Pt/C and IrO2 electrodes prepared by the spin-coating method improve the overall water splitting performance compared to the commercial electrode materials.

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Award Candidate (Paper Competition)
Manuscript ID.  0538
Paper No.  2023-FRI-P0801-P004
Jia-Zhen Cai Laser-Fired Contact method for applying Graphene Oxide or Aluminum Oxide to the passivated emitter and rear cell
Chu-Hsuan Lin, Jia-Zhen Cai, Ming-Chieh Teng, National Dong Hwa University (Taiwan)

We have investigated how to utilize laser-fired contact (LFC) to eliminate the need for the high-temperature screen printing process currently employed for metallization of the passivated emitter and rear cell (PERC), which is the mainstream solar cell technology. Additionally, a comparison will be made between using graphene oxide (GO) and aluminum oxide (Al2O3) as rear passivation layers for PERC.

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Award Candidate (Paper Competition)
Manuscript ID.  1003
Paper No.  2023-FRI-P0801-P005
Yun-Hsiang Lu Bi2S3/ZnO Heterostructure for Photoelectrochemical Water Splitting
Yun-Hsiang Lu, Yu-Kuei Hsu, National Dong Hwa University (Taiwan)

Energy is a serious global issue in today's world, and the world is trying to find ways to improve energy efficiency. Hydrogen can be considered one of the most efficient renewable energy sources. In this investigation, by using NiS as the oxygen evolution reaction catalyst and doping Mo ions in the Bi2S3/ZnO photoanode and modifying the composition of the electrolyte, the efficiency of photoelectrochemical hydrogen production was improved. In addition, this new photoanode can achieve low onset potential and high photocurrent, thereby comprehensively improving hydrogen generation efficiency and reducing energy waste.

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Award Candidate (Paper Competition)
Manuscript ID.  0315
Paper No.  2023-FRI-P0801-P006
Cheng-Wei Wang High Performance P-type Tin monoxide Thin Film Transistor for Flat Panel Display Applications
Cheng-Wei Wang, Tsung-Che Chiang, Zhen-Hao Li, Kai-Cheng Syu, Po-Tsun Liu, College of Electrical Engineering, National Yang Ming Chiao Tung University (Taiwan)

In this study, we deposited SnO as a channel layer by two different sputtering methods and optimized the SnO film by adjusting different post deposition annealing temperatures. With RF sputtering annealing at 250℃ SnO TFT exhibited p-type electrical characteristics of high mobility of 0.58 cm2/V∙s and on off current ratio (ION/IOFF) of 2.89×102 . To sum up, SnO TFT is very promising for applying to flat panel display technology.

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Award Candidate (Paper Competition)
Manuscript ID.  0468
Paper No.  2023-FRI-P0801-P007
Chia-Hsuan Lee Surface-Enhanced Raman Scattering Detection of Novel Environmentally Friendly Explosive DNBF
Chia-Hsuan Lee, Hung-Chun Lin, Fu Jen Catholic University (Taiwan); Yung-Hsien Liu, National Chung-Shan Institute of Science & Technology (Taiwan); Jin-Shuh Li, National Defense University (Taiwan), National Chiao Tung University (Taiwan); Jin-Cherng Hsu, Fu Jen Catholic University (Taiwan), National Central University (Taiwan)

This study used gold-coated aluminum foil as a substrate for surface-enhanced Raman scattering (SERS) to study the Raman spectra of an environmentally friendly explosive compound, Dinitrobenzofuroxan (DNBF), at concentrations ranging from 10-4 M to 10-8 M. Results showed no significant peaks in the Raman spectra at 10-7 M concentration, suggesting noticeable enhancement effects of the substrate on DNBF only up to 10-6 M.
Furthermore, SEM, XRD, and XPS were employed to confirm substrate composition and morphology, aiding data analysis.

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Award Candidate (Paper Competition)
Manuscript ID.  0709
Paper No.  2023-FRI-P0801-P008
Pei-Chun Ku Enhancing Polymer Solar Cells with Intense Xenon Treatment
Pei-Chun Ku, National Taiwan University of Science and Technology (Taiwan); Hui- Chieh Lin, Syy-yu Chung, Ming Chi University of Technology (Taiwan); Chih-Chien Lee*, National Taiwan University of Science and Technology (Taiwan); Shun-Wei Liu*, Ming Chi University of Technology (Taiwan)

By implementing Intense Xenon Treatment for the optimization of the Electron Transport Layer (ETL), remarkable advancements were made in enhancing performance, leading to an exceptional power conversion efficiency (PCE) of 13.12% in organic solar cells (OSCs).

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Award Candidate (Paper Competition)
Manuscript ID.  0930
Paper No.  2023-FRI-P0801-P009
Wei-Cheng Jiang Harvesting of Thickness-dependent Photocurrent Using Nanostructured and Cost-effective Copper Oxide Thin Films for Solar Water Splitting
Wei-Cheng Jiang, Chien-Tsung Li, Bu-Jine Liu, Yu-Wei Lin, YongMan Choi, National Yang Ming Chiao Tung University (Taiwan)

CuO thin films for photoelectrochemical water splitting are fabricated using the sol-gel spin coating method. The thickness of CuO thin films is precisely controlled by depositing different layers. Thickness-dependent optical properties are investigated to optimize the photoconversion efficiencies of photoelectrochemical water splitting using CuO thin films.

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Award Candidate (Paper Competition)
Manuscript ID.  0235
Paper No.  2023-FRI-P0801-P010
Yi-Ning Wang The influence of different processes on the thickness distribution characteristics of silicon thin films
Yi-Ning Wang, Ya-Chih Chou, Chien-Jen Tang, Feng Chia University (Taiwan)

Different Si thin films were deposited through different deposition processes. The
study aimed to explore the effects of experimental parameters and the etching depth of the target
material on the characteristics of film thickness distribution, to understand the optical properties
of the silicon thin films.

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Award Candidate (Paper Competition)
Manuscript ID.  0726
Paper No.  2023-FRI-P0801-P011
Song-Ting Kao Comparative Study of Optical and Electrical Properties in ITO Films using Direct-Current Reactive Magnetron Sputtering with and without Plasma Assistance
Song-Ting Kao, Chien-Jen Tang, Feng Chia University (Taiwan)

Direct-current magnetron sputtering and plasma-assisted reactive magnetron sputtering under low temperatures have deposited ITO thin films. ITO thin films' better electrical and optical properties were investigated under different growth conditions. In this study, A comparison with ITO films by both technology under low temperatures was analyzed by UV-VIS-NIR spectrometer, four-point probe, hall effect measurement, and X-ray diffractometer.

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Award Candidate (Paper Competition)
Manuscript ID.  1028
Paper No.  2023-FRI-P0801-P012
Chia-Hung Chou Pixel-wise Color Mixing in Surface Coloring of Stainless Steel Induced by Nanosecond Pulsed Laser
Chia-Hung Chou, Hung-Wen Chen, National Tsing Hua University (Taiwan)

We present a novel laser coloring approach for stainless steel (SUS304) by employing non-overlapping subpixels within a single pixel to achieve color mixing. In contrast to previous methods that relied on adjusting laser parameters to produce color variations, our method enables the generation of intermediate colors between selected hues. The results demonstrate a two-color gradient transition in the color bar, offering a new artistic choice for laser coloring.

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Award Candidate (Paper Competition)
Manuscript ID.  0184
Paper No.  2023-FRI-P0801-P013
Chia-Jou Lin The Investigation of Semiconductor Properties of NiCrFeVCuTi High Entropy Alloy Thin Films via Surface Analysis Techniques
Chia-Jou Lin, Po-Chih Chu, Ting-Jia Yang, Pei-Chen Huang, Man-Ying Wang, Wei-Chun Lin, National Sun Yat-sen University (Taiwan)

This study aims to understand the electronic properties of the NiCrFeVCuTi high-entropy materials and demonstrate its correlations between semiconductor properties in corrosive environment. The surface chemistry was examined via X-ray photoelectron spectroscopy (XPS) and hard X-ray photoelectron spectroscopy (HAXPES). The XPS system equipped with Ultraviolet photoemission spectroscopy (UPS) and Low-energy inverse photoelectron spectroscopy (LEIPS) was used to investigate the electronic structure of the materials along with different corrosion durations. The results provide insights to monitor the chemical and electronic properties of high entropy oxide thin films, which provides a pathway for investigating materials property of semiconductor electronics in the future.

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Award Candidate (Paper Competition)
Manuscript ID.  0505
Paper No.  2023-FRI-P0801-P014
Minh Loi Le Current injected gain spectrum of bulk and tri-layer MoS2 as an optical amplifier
Minh Loi Le, Ting Wei Chen, National Pingtung University (Taiwan)

We numerically investigate the optical gain spectrum of the bulk and tri-layer of molybdenum disulfide functioned as an optical amplifier. In room temperature, the bulk has a minimum interaction photon energy at the band gap (1.23 eV) with a threshold injected current density ~3 kA/cm2. For the 2D tri-layer film, the minimum interaction photon energy is lifted to 2.09 eV due to the quantum-well structure, and the threshold injected current density is ~1.9 kA/cm2 which is significantly lower than that in bulk. The dependence of the optical gain profiles on the temperature and injected current density are also investigated.

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Award Candidate (Paper Competition)
Manuscript ID.  1051
Paper No.  2023-FRI-P0801-P015
LIANG ZHANG Polymer Dispersed Liquid Crystals with Narrow Band Infrared Reflection
LIANG ZHANG, Hoseo University (Korea); Charlse Kwon, BONA INC (Korea); Chul Gyu Jhun, Hoseo University (Korea)

The Polymer dispersed liquid crystals (PDLC), in which liquid crystal droplets are
dispersed in a polymer matrix, have opaque state or transparent state. Without external electric
field, the refractive index of liquid crystal droplets do not match that of the polymer matrix, so
that so that the light is strongly scattered when it passes through the PDLC film. By tuning the
liquid crystal properties, we have made a film that reflects Infrared and transmits visible light.

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Award Candidate (Paper Competition)
Manuscript ID.  0228
Paper No.  2023-FRI-P0801-P016
Wei-Xiang Hong Ag-TiO2 Composite Films and TiO2 Compact Layer for Enhanced Dye-Sensitized Solar Cells Performance
Wei-Xiang Hong, Hsueh-Tao Chou, Zhi-Yi Yeh, Chung-Hsuan Hsieh, National Yunlin University of Science and Technology (Taiwan)

In this study, the spin-coating method has been used to prepare TiO2 compact layer with different thicknesses. Afterward, different weight percentages of silver nanoparticle solution were added to TiO2 doctor blade colloid. Ag-TiO2 films were prepared by using doctor blade method for Dye-sensitized solar cells (DSSCs). With the reduced electron recombination at the interface between electrolyte and FTO, and with the enhancement of localized surface plasmon resonance (LSPR) effect, the photovoltaic properties is improved, where an optimal photoelectric conversion efficiency (PCE) of 5.96 % is achieved.

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Award Candidate (Paper Competition)
Manuscript ID.  0971
Paper No.  2023-FRI-P0801-P017
Chung-Hsuan Hsieh Bilayer Structured of Photoanode with Ag-TiO2 Absorbing Layer and DTA Scattering Layer for Application in Dye-Sensitized Solar Cells
Chung-Hsuan Hsieh, Chun-Yu Li, Hsueh-Tao Chou, Wei-Xiang Hong, National Yunlin University of Science and Technology (Taiwan)

In this study, the deformation titanium dioxide aggregated scattering layer (DTA) is first prepared using a blade-coating method to enhance the light utilization and dye adsorption capabilities of the photoanode. The silver nanoparticles are added into the absorbing layer, and then are prepared using spray coating method. Due to the localized surface plasmon resonance (LSPR) effect caused by the Ag-TiO2 photoanode this has led to an increase in the photovoltaic conversion efficiency (PCE) from 3.91% to 4.5%. It should be noted that the incorporation of a bilayer structure with a scattering layer has further improved the PCE to 5.1%.

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Award Candidate (Paper Competition)
Manuscript ID.  0828
Paper No.  2023-FRI-P0801-P018
Ting-Ya Wu Application of Nickel Cobalt Sulfide Ternary Compounds in Photorechargeable Supercapacitors
Ting-Ya Wu, Yu-Kuei Hsu, National Dong Hwa University (Taiwan)

Nickel Cobalt Sulfide ternary compound (NiCo2S4) compound is a versatile semiconductor with strong electrochemical abilities in applications like dye-sensitized solar cells (DSSCs) and supercapacitors (SCs). Our study employs NiCo2S4 as a DSSCs cathode and SCs anode, creating photorechargeable supercapacitors (PS). Two DSSCs in series achieve high charge potential, using platinum and NiCo2S4 counter electrodes. For the SCs, NiCo2S4 acts as the positive electrode alongside bismuth's negative electrode, forming an asymmetric supercapacitor (ASCs). Successfully combining DSSCs and ASCs demonstrates a high-performance PS device.

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Manuscript ID.  0261
Paper No.  2023-FRI-P0801-P019
Yung-Lan Chuang Photoelectrochemical Characteristics of photoelectrodes made of n-GaN Nanopillars capped with Ni(OH)2 Nanosheets
Yung-Lan Chuang, Wei-Wei Tung, National Cheng Kung University (Taiwan); Ming-Lun Lee, Southern Taiwan University of Science and Technology (Taiwan); Jinn-Kong Sheu, National Cheng Kung University (Taiwan)

In photoelectrochemical reactions, the performance of n-GaN nanopillar photoelectrodes declines due to photocorrosion. This study explores enhancing stability during PEC reactions. Photoelectrodes of n-GaN with a Ni(OH)2 capping layer showed more durability than Ni(OH)2-free ones. In particular, the effect of a NiO seed layer on Ni(OH)2 nanosheet coverage on n-GaN was evaluated. Enhanced stability is mainly attributed to the Ni(OH)2 coating, passivating defects in n-GaN and facilitating carrier transport to the electrolyte, suppressing photocorrosions.

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Manuscript ID.  0146
Paper No.  2023-FRI-P0801-P020
Wen-Wei Huang Gold Nanoparticle Modified Anodic Aluminum Oxide Template Array for Non-enzymatic Glucose Sensor
Wen-Wei Huang, Hsi-Chao Chen, National Yunlin University of Science and Technology (Taiwan); Ying-Sheng Lin, National Taiwan University Hospital (Taiwan); Ming-Hsien Yen, Jun-Wei Wan, Yu-Lun Chiu, National Yunlin University of Science and Technology (Taiwan)

This study presents a hybrid non-enzymatic glucose sensor based on localized surface plasmon resonance (LSPR) of gold nanoparticles (Au NPs) modified copper oxide/zinc oxide nanorod array (Cu2O/ZnO NRA). An aluminum film was first grown into an array of pores through an anodization process, and it was followed by electrodeposition of ZnO nanorods within the arrayed pores. Subsequently, Cu2O was electrochemically deposited on the ZnO NRA. Au NPs were chemically synthesized and dispersed on the Cu2O/ZnO NRA surface using Nafion as an ion exchange resin. The sensor exhibited a linear range of 7.41-11.111 mM and a sensitivity of 315.67 μAmM-1cm-2.

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Manuscript ID.  1032
Paper No.  2023-FRI-P0801-P021
Min-Yang Lu The Optical and Mechanical Properties of Tungsten Doped Vanadium Dioxide Thin Films
Min-Yang Lu, Feng Chia University (Taiwan)

In this work, tungsten-doped vanadium oxide (VO2) films were deposited by electron beam evaporation associated with ion beam-assisted deposition.The optical and mechanical properties of these VO2 films at different tungsten doping concentrations were investigated. The results show that the visible light transmittance and residual stress of vanadium oxide films decrease with the increase of doping tungsten concentration. When the VO2 sample with a doping concentration of 5% is heated above 55 °C, the transmittance drops sharply, which may be due to the phase transition to a metal phase, and the phase transition temperature is estimated to be 55 °C.

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Manuscript ID.  0600
Paper No.  2023-FRI-P0801-P022
Tien-Yu Wang The Endurance of AlxGa2−xO3 Resistive Random-Access Memory Device Enhanced by Oxygen Plasma Treatment
Tien-Yu Wang, Department of Photonics (Taiwan); Wei-Chih Lai, Department of Photonics (Taiwan), Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy (Taiwan); Qiao-Ju Xie, Shun-Hao Yang, Department of Photonics (Taiwan); Sheng-Po Chang, Department of Photonics (Taiwan), Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy (Taiwan); Cheng-Huang Kuo, Institute of Lighting and Energy Photonics, College of Photonics (Taiwan); Jinn-Kong Sheu, Department of Photonics (Taiwan)

The aluminum gallium oxide (AlxGa2−xO3) RRAM device is investigated in this report. The AlxGa2−xO3 layer is synthesized by thermal oxidation of the AlGaN epitaxy, and the AlxGa2−xO3 layer is treated by oxygen (O2) plasma. The endurance of AlxGa2−xO3 RRAM device is significantly improved by O2 plasma treatment. Besides, the retention time of AlxGa2−xO3 RRAM device with O2 plasma treatment for 90 min has persisted for 104 s. The fabricated AlxGa2−xO3 RRAM device presents potential for data storage.

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Manuscript ID.  0265
Paper No.  2023-FRI-P0801-P023
Wen-Ching Hsieh Improved High-k NVM Programming by UV Irradiation
Wen-Ching Hsieh, Minghsin University of Science and Technology (Taiwan); Fun-Cheng Jong, Southern Taiwan University of Science and Technology (Taiwan); Shao-Wei Lu, You-Chen Zhou, Yi-Xun Chen, Bo-Ting Li, Minghsin University of Science and Technology (Taiwan)

This report investigates the potential of laser ionization programming (hereafter LIP) to enhance the programming capability of a non-volatile memory (NVM) capacitor with lightly doped substrate, specifically a silicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS) type. Laser-generated charges in the substrate of a SONOS-type NVM capacitor with lightly doped substrate (hereafter LDSONOSC) make them more easily programmable under laser ionization. The focus is on the performance of UV LIP on an LDSONOSC, which utilizes a UV transparent conductive gate and UV transparent nanocrystalline high-k gate dielectric, enabling the UV-LIP-LDSONOSC to store more data in a smaller space, ultimately enhancing their efficiency.

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Manuscript ID.  0516
Paper No.  2023-FRI-P0801-P024
Bo-Lin Hou Influence of Annealing Temperature on Zinc Tin Oxide Thin Film Transistors
Chia-Ying Li, Hao-Wen Shih, Bo-Lin Hou, National Cheng Kung University (Taiwan); Sheng-Po Chang, National Kaohsiung University of Science and Technology (Taiwan); Shoou-Jinn Chang, Jone-Fang Chen, National Cheng Kung University (Taiwan)

This study focused on the influence of different annealing temperature of ZTO TFTs. Annealing can help reduce oxygen vacancies and cause the rearrangement of atoms. We found that the higher annealing temperature lead to better electrical properties. The threshold voltage shift to positive region and the on current of TFTs increase significantly. It also improved the subthreshold swing by reducing the interface traps. We successfully made annealing ZTO TFTs and their electrical properties have been discussed in this study.

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Manuscript ID.  0446
Paper No.  2023-FRI-P0801-P025
I-Cheng Lu Transparent Conducting P-type Nitrogen and Silver Co-doped Zinc Oxide Thin Films
Fang-Hsing Wang, Yi-Huei Ho, I-Cheng Lu, National Chung Hsing University (Taiwan)

The transparent conducting N, Ag co-doped ZnO thin films were fabricated using the sol-gel spin-coating technique. This work explored the influence of Ag concentration, annealing temperature and time on the physical characteristics of ZnO thin films. The resulting ZnO films demonstrated p-type conductivity, boasting a remarkably low resistivity of 5.88 Ω·cm, coupled with an impressive average visible transmittance exceeding 89%. These engineered p-type ZnO thin films exhibit great potential for applications in optoelectronic devices.

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Manuscript ID.  0724
Paper No.  2023-FRI-P0801-P026
Chia-Tse Hsu Machine Learning Models for Predicting Efficiencies of Organic Photomultiple Photodetectors
Tsu-Hsin Li, Chia-Tse Hsu, Fang-Chung Chen, National Yang Ming Chiao Tung University (Taiwan)

We train four machine learning (ML) models using chemical structures of the active materials based on donor-acceptor binary blend films for predicting the efficiency of organic photomultiplication (PM) type photodetectors. The results of the four ML models all exhibit high accuracies, suggesting the ML models are very promising for evaluating the organic molecules for PM-type organic photodetectors.

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Manuscript ID.  0657
Paper No.  2023-FRI-P0801-P027
Chiao-Li Chang Photoelectrochemical Performance of Porous Silicon Photocathode by Electroless Nickel Deposition
Chiao-Li Chang, Zi-Chun Tseng, Vincent K. S. Hsiao, National Chi Nan University (Taiwan)

This study investigates the photoelectrochemical (PEC) behavior of porous silicon (PSi) and its nickel (Ni)-coated hybrid system. Ni-coating significantly enhances PEC performance, attributed to catalytic activity, improved light absorption, and altered carrier transport. Scanning electron microscopy (SEM) analysis reveals distinct structures on PSi surfaces before and after Ni-coating, correlating with enhanced PEC performance due to intensified carrier mobility. Varying Ni coating times show optimal PEC at 15 minutes, potentially due to suitable structures enhancing electron-hole pairs separation.

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Manuscript ID.  0507
Paper No.  2023-FRI-P0801-P028
Wen-Ying Yu Preparation of Quantum Dots MAPbBr3 as Single Crystal Material and Doping in Active Layer to Enhance Perovskite Solar Cells Efficiency
Wen-Ying Yu, Ssu-Ying Chen, National Taipei University of Technology (Taiwan); Ching-Ho Tien, Ming Chi University of Technology (Taiwan); Lung-Chien Chen, National Taipei University of Technology (Taiwan)

MAPbBr3 single crystal material was grown by inverse temperature growth method, and then MAPbBr3 perovskite quantum dots (QD-MAPbBr3) were synthesized by ligand-assisted precipitation method. The QD-MAPbBr3 was doped with anti-solvent and injected into the organic-inorganic perovskite active layer to improve the efficiency of solar cells.

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S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology II
Friday, Dec. 1, 2023  15:15-17:30
Presider: Prof. Mei-Hsin Chen (National Taipei University of Technology, Taiwan) Prof. Peichen Yu (National Yang Ming Chiao Tung University, Taiwan)
Room: 92283 (2F)
15:15 - 15:45
Manuscript ID.  0653
Paper No.  2023-FRI-S0802-I001
Invited Speaker:
Yi-Ming Chang
Organic Photodiode Beyond Photovoltaic Application
Yi-Ming Chang, Raynergy Tek Incorporation (Taiwan)

15:45 - 16:00 Award Candidate (Paper Competition)
Manuscript ID.  0868
Paper No.  2023-FRI-S0802-O001
Tao Deng Useing Quantum dots to Increase GaAs Solar Cells’s Efficiency
Tao Deng, Shun-Chien Hsu, Chien-Chung Lin, National Taiwan University (Taiwan)

In this study we focus on enhancing the conversion efficiency of GaAs solar cells by adding green and red quantum dot. Quantum dots are nanomaterials with unique bandgap structures capable of generating additional charge carriers upon absorbing solar photons, thereby improving the efficiency of the photoelectric conversion process, and the addition of quantum dots can potentially increase the photoelectric conversion efficiency of GaAs solar cells.

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16:00 - 16:15 Award Candidate (Paper Competition)
Manuscript ID.  0936
Paper No.  2023-FRI-S0802-O002
Han-Wei Wang Ultraviolet C AlGaN-based Photodetectors
Han-Wei Wang, Yen-Da Chen, Chia-Feng Lin, National Chung Hsing University (Taiwan)

Ultraviolet C AlGaN-based light-emitting diodes and PIN-type photodetectors (PD) with an embedded porous AlGaN layer were demonstrated. The n-type Al0.6GaN:Si layer with high Al content was transformed into the conductive porous AlGaN:Si layer through the electrochemical (EC) wet etching process. The relative reflectivity of the treated structure was higher than the non-treated structure. High electroluminescence emission intensity, peak wavelength redshifted from 272.8 to 273.4 nm, and low interference oscillation were observed by forming the porous AlGaN layer. For the PD structures, the peak responsivity was measured at about 255 nm.

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16:15 - 16:30 Award Candidate (Paper Competition)
Manuscript ID.  0550
Paper No.  2023-FRI-S0802-O003
Ming-Hsien Chiang Designing Chromatic Stability Methods for Antireflective Coatings
Ming-Hsien Chiang, BASO Precision Optics LTD. (Taiwan), Feng Chia University (Taiwan); Chien-Jen Tang, Feng Chia University (Taiwan)

This study simulated different peak wavelength positions and peak reflectance values of anti-reflective coating. The distribution of chromaticity coordinates was analyzed when there were random errors in film thickness. The objective was to identify the optimal design methodology for an antireflective coating that minimizes chromatic deviation.

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16:30 - 16:45 Award Candidate (Paper Competition)
Manuscript ID.  0345
Paper No.  2023-FRI-S0802-O004
Yun-Jie Jhang Predicting Thin Film Color Using Deep Learning: From Optical Properties to Machining Parameters
Yun-Jie Jhang, Chia-Hung Chou, Yuan-Fang Lee, Zong-Ying Yang, Hung-Wen Chen, National Tsing Hua University (Taiwan)

We propose deep learning models for accurately predicting Lab color values in laser-induced thin film coloration, utilizing both simulated and real-world machining parameters. The models demonstrated impressive performance, achieving ΔE values of 0.77 and 3.55 for simulated and real-world datasets, respectively. The results indicate promising potential for deep learning in enhancing efficiency and precision in predicting laser-induced coloring.

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16:45 - 17:00 Award Candidate (Paper Competition)
Manuscript ID.  0327
Paper No.  2023-FRI-S0802-O005
Chung-Tien Chiu A Diode-Connected 7T1C AMOLED Pixel Circuit Using LTPO TFTs for Low Refresh Rate Smartwatch Displays
Chung-Tien Chiu, Yi-Chien Chen, Jui-Hung Chang, National Cheng Kung University (Taiwan); Po-Cheng Lai, AUO Corporation (Taiwan); Chih-Lung Lin, National Cheng Kung University (Taiwan)

This work introduces a 7T1C AMOLED pixel circuit designed to address the issues of VTH variations and leakage current. HSPICE simulation results demonstrate that the relative current error rates are less than 2%. Additionally, the offsets of driving current are only 0.68 nA, 0.52 nA, and 0.54 nA for high, medium, and low gray levels, respectively.

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17:00 - 17:15 Award Candidate (Paper Competition)
Manuscript ID.  0763
Paper No.  2023-FRI-S0802-O006
Wei-Han Wang Optical properties of Thin-film Metallic Glass in Thermal Infrared Region
Wei-Han Wang, Chia-Chien Lai, Tzu-Chieh Hsiao, Sih-Wei Chang, Hsuen-Li Chen, National Taiwan University (Taiwan)

This study displays the optical properties of thin-film metallic glasses (TFMGs) in the thermal infrared (IR) region. Applying optical thin film theory, we could modulate the emissivity of TFMG in the thermal IR region. The measured emissivity of the TFMG (45.35%) was significantly enhanced when compared with that of a Si substrate or metal film. Our findings reveal that metallic glass films can display thermal radiative properties superior to those of metals and semiconductors, making them promising materials for use in electronic devices with heat dissipation properties.

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17:15 - 17:30 Award Candidate (Paper Competition)
Manuscript ID.  0764
Paper No.  2023-FRI-S0802-O007
Chin-Jung Chiu Study the Scaling of AlGaN Back Barrier in GaN HEMTs
Chin-Jung Chiu, Yuh-Renn Wu, National Taiwan University (Taiwan)

This study focuses on enhancing HEMT high-frequency performance through gate length scaling. However, as gate lengths decrease, the short channel effect and buffer leakage become significant challenges. The design of back-barrier effectively suppresses buffer leakage, lowers subthreshold swing (SS), and enhances the device’s fT. Thicker back barriers demonstrate better results, with the 50nm back barrier achieving an fT of 179 GHz, which is higher than the 30nm back barrier with fT of 174 GHz. However, excessively thick barriers may create a secondary channel. These findings offer valuable insights for optimizing GaN HEMT characteristics.

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S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology III
Saturday, Dec. 2, 2023  10:45-12:00
Presider: Dr. Chih-Wei Chu (Academia Sinica, Taiwan) Dr. Chi-Chung Kei (Instrument Technology Research Center, Taiwan)
Room: 92283 (2F)
10:45 - 11:15
Manuscript ID.  1090
Paper No.  2023-SAT-S0803-I001
Invited Speaker:
Chi-Chung Kei
Nanostructures Prepared by using Atomic Layer Deposition for Optoelectronic Applications
Chi-Chung Kei, Advanced Process and Equipment Development Division, Taiwan Instrument Research Institute (TIRI) (Taiwan)

Atomic layer deposition (ALD) has been used extensively for depositing thin films in the semiconductor and
optoelectronic industries. The self-limiting character of ALD allows accurate thickness control and superior
coating conformality over a complex structure. With the assistance of nanostructured templates, hollow
nanostructures, such as nanotubes, can be fabricated by using ALD. It is promising to manufacture various
nanostructures for optoelectronic applications by using ALD and templates. We have successfully fabricated
ZnO, VO2, and TiO2 nanostructures for the optoelectronic applications, such as photocatalysis,
photoelectronchemical water splitting, and thermochromism. Multiwalled, multilayered or alloyed nanotubes
with superior optoelectronic properties fabricated by using nanolamination ALD processes will be also presented
in this talk. On the other hand, metallic nanoparticles (NPs), such as Pt and Ni, can be prepared by using ALD
due to insufficient nucleation sites on the substrate. The size of NPs can be easily controlled by changing the
cycle number of ALD, allowing the adjustment of optical properties.

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11:15 - 11:30 Award Candidate (Paper Competition)
Manuscript ID.  0756
Paper No.  2023-SAT-S0803-O001
Hsin-Wen Huang Study of Bilayer MoS2 and WSe2 Transport Properties and Their Application in MOSFET
Hsin-Wen Huang, Yuh-Renn Wu, National Taiwan University (Taiwan)

Transition metal dichalcogenide (TMD) material is an excellent candidate for avoiding short-channel effects. One study shows the few-layer MoS2 nanosheet transistors have better performance than the monolayer one [1]. Therefore, we investigate the transport properties of bilayer MoS2 and bilayer WSe2 and utilize them as channels in our double-gate MOSFET design. Our result shows that bilayer MoS2 devices and bilayer WSe2 p-type devices have a nice channel control ability. The sub-threshold swing values are 65~60 mV/dec with a gate length longer than 7 nm. Among these two materials, the bilayer MoS2-based device shows more promising characteristics

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11:30 - 11:45 Award Candidate (Paper Competition)
Manuscript ID.  0766
Paper No.  2023-SAT-S0803-O002
Zhi-Hao Chen Optimization of The Base-Collector Junction of Type-I InP HBT by Designing Epi Structure
Zhi-Hao Chen, Yuh-Renn Wu, National Taiwan University (Taiwan)

To achieve a higher fT of an HBT device, maximizing the device's gm (ΔIC/ΔVBE) and minimizing the device's equivalent capacitance play crucial roles. This work introduces a quaternary material (InGaAlAs) chirped-SL (Chirped Superlattice) structure into the Base-Collector grade. This allows for diminishing the conduction band's discontinuity and gradually increasing the effective bandgap from the base to the collector of the B-C junction without changing the thickness of the barrier layer. Quaternary superlattice structures exhibit lower equivalent capacitance than ternary superlattices and achieve higher IC (collector current) than quaternary gradient layers.

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11:45 - 12:00 Award Candidate (Paper Competition)
Manuscript ID.  0894
Paper No.  2023-SAT-S0803-O003
Li-Cheng Huang Deposition and Optimization of High-Quality GaN Thin Films on Glass Substrates through RF Magnetron Sputtering
Li-Cheng Huang, Wei-Sheng Liu, Balaji Gururajan, Kuo-Jui Hu, Guo-Hong Shen, Yuan Ze University (Taiwan)

We deposited high-quality GaN thin films on glass substrates using RF reactive magnetron sputtering with high-purity gallium (8N). The process was optimized to enhance crystal quality, aided by an AlN buffer layer to improve the crystal quality of GaN films. X-ray diffraction confirmed the (002) crystal phase with a narrow FWHM of 0.85°. Low-temperature photoluminescence exhibited a band-edge emission at 3.36 eV (369 nm). X-ray photoelectron spectroscopy revealed strong Ga-N bonding. RF magnetron sputtering proved effective for depositing GaN films on glass, offering potential for optoelectronic applications.

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S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology IV
Saturday, Dec. 2, 2023  13:00-15:00
Presider: Prof. Chia-Feng Lin (National Chung Hsing University, Taiwan) Prof. Zingway Pei (National Chung Hsing University, Taiwan)
Room: 92283 (2F)
13:00 - 13:15
Manuscript ID.  0145
Paper No.  2023-SAT-S0804-O001
Hao-Wei Kao Raman Spectroscopy Analysis of Hetero-epitaxial Silicon Carbide by Reactive Radio Frequency Magnetron Sputtering
Hao-Wei Kao, Hsi-Chao Chen, National Yunlin University of Science and Technology (Taiwan); Bo-Huei Lia, Sheng-De Wong, Taiwan Instrument Research Institute (Taiwan); Xin-Ya Zheng, You-Sheng Yang, Kun-Zu Yi, National Yunlin University of Science and Technology (Taiwan)

The research proposal is to heterogeneous growth carbide (SiC) films on silicon (Si) substrates using reactive radio frequency (RF) magnetron sputtering. The substrates are heated to 600℃ to achieve epitaxial growth of SiC films. In order to avoid target damage from heat accumulation, we utilize reactive RF sputtering technique with Si targets and methane (CH4) gas. The bonding properties of SiC films under different RF power levels were analyzed using Raman spectroscopy. The experimental results demonstrate that the RF power of 150W represents the critical point for Si-C bonds and get 4H-SiC crystal after 1200 annealing.

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13:15 - 13:30
Manuscript ID.  0323
Paper No.  2023-SAT-S0804-O002
Matej Sebek Terahertz induced electron emission from ultrathin Au films
Matej Sebek, Tobias Olaf Buchmann, Simon Jappe Lange, Peter Uhd Jepsen, Technical University of Denmark (Denmark)

This study explores the under-investigated terahertz properties of ultrathin metallic films, specifically electron emission. We observe this emission in ultrathin gold films, driven by a strong THz field. Films of around 2 nm thickness show efficient absorption and significant electron emission. Our analysis, employing Time-of-Flight (TOF) measurements and electron energy distribution fitting, indicates that electron emission is a result of the interaction between hot electrons and the THz electric field.

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13:30 - 13:45
Manuscript ID.  0675
Paper No.  2023-SAT-S0804-O003
Yu-Sheng Zhou Solution-Processed Nanocomposite with Blended MXene-Polythiophene Semiconducting Network Field-Effect Transistor
Yu-Sheng Zhou, Gen-Wen Hsieh, National Yang Ming Chiao Tung University (Taiwan)

MXene, a new class of 2D materials, is being grad-ually used in energy storage, sensor, catalyst, super-capacitor, and other fields. We also anticipate that MXene can be an enabler in organic-based transistors. Here, we attempt to incorporate titanium carbide Ti3C2Tx MXene into a polythiophene semiconducting layer, in the hope of boosting charge carrier transport. Primary results show a 4-fold enhancement in mobility when 1.0 wt% of MXene is blended. The hybrid tran-sistor also reveals a prolonged air stability with re-spect to pristine polythiophene device.

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13:45 - 14:00
Manuscript ID.  0198
Paper No.  2023-SAT-S0804-O004
Yu-Han Huang Bifacial Perovskite Solar Cells with Gold Transparent Electrodes Grown on Molybdenum Disulfide
Yu-Han Huang, National Taiwan University (Taiwan), Academia Sinica (Taiwan); Hanmandlu Chintam, Academia Sinica (Taiwan); Chao-Hsin Wu, National Taiwan University (Taiwan); Chih-Wei Chu, Shih-Yen Lin, Academia Sinica (Taiwan)

We have fabricated bifacial perovskite solar cells with 10 nm Au/MoS2 and ITO transparent electrodes (TEs) on glass substrates. Compared with the reference device with 100 nm Ag and ITO electrodes, similar PCE values ~ 12 % are observed for the two devices when solar light is irradiated from ITO side. When the solar light illuminates from metal side, only the device with the 10 nm Au/MoS2 TE exhibits similar short-circuit current and PCE value ~ 11.4 %, which have demonstrated the potential of 2D material-assisted nanometer-thick Au films for TE applications in bifacial and tandem solar cells.

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14:00 - 14:15
Manuscript ID.  0686
Paper No.  2023-SAT-S0804-O005
Qing-Kai Xie Investigation of Interface Absorption in Nb2O5/SiO2 Multilayers
Qing-Kai Xie, Chien-Jen Tang, Feng Chia University (Taiwan)

We examine how thin-film interfacial absorption layers form between Nb2O5 and SiO2. The main aim of this research is to understand the optical properties of the interface, which are crucial for optoelectronic applications. Moreover, we use various target materials to apply anti-reflective coatings and discuss the outcomes obtained from spectroscopy. Overall, this investigation enhances our comprehension of the relationship at the Nb2O5/SiO2 interface.

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14:15 - 14:30
Manuscript ID.  0847
Paper No.  2023-SAT-S0804-O006
Ya-Ching Lin Epitaxial Growth of GaN Epilayers on Si and AlN/Si Templates at 600°C
Ya-Ching Lin, Hung-Sheng Liu, Sheng-Hui Chen, National Central University (Taiwan)

GaN layers were directly epitaxial grown at 600°C using the high power impulse magnetron sputtering technique, in contrast to the MOCVD method that demands temperatures exceeding 1000°C. In this epitaxial process utilizing N2/Ar mixture gas and Ga target, the GaN layers were directly grown on Si (111) substrates and Si (111) substrates with AlN buffer layers. XRD measurements of full-width at half-maximum (FWHM) reveal that the GaN layer with the AlN buffer layer exhibits significantly lower FWHM and stronger intensity. SEM results indicate that the GaN layer deposited on the AlN buffer layer displays a relatively smooth surface.

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14:30 - 14:45
Manuscript ID.  1002
Paper No.  2023-SAT-S0804-O007
Yu-Jie Zhang Propagation of surface plasmon polariton on a silver coated polymer grating prepared by oblique angle deposition
Yi-Jun Jen, You-Ting Jian, Yu-Jie Zhang, National Taipei University of Technology (Taiwan)

In this work, the optical response and in-plane surface plasmon polariton of a grating prepared by oblique angle deposition of silver is proposed. Based on the P-polarized reflection peak at certain wavelengths. The surface plasmon polariton propagation on the surface of silver coated grating is investigated here. By analyzing the radiation on the surface from a dipole above the surface with FDTD method, the in-plane iso-frequency curves are derived and reveal the anisotropic properties of the grating surface. The results show that the grating surface exhibits anisotropic behavior due to the oblique angle deposition.

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14:45 - 15:00
Manuscript ID.  0839
Paper No.  2023-SAT-S0804-O008
Bi-Ting Wu Measurements of Perovskite Nanocrystals Fluorescence Lifetime by a Custom-built Frequency-domain System Based on FPGA
Bi-Ting Wu, Yung-Yi Chuang, Zhen-De Lin, Yi-Chun Chen, National Yang Ming Chiao Tung University (Taiwan)

We report a custom-built frequency domain fluorescence lifetime instrument, which enables fluorescence lifetime measurement of fluorophore species at various modulation frequencies (200kHz-30MHz). Fluorescence excitation is carried out by light-emitting diodes (LEDs), and frequency output of the excitation light source and photomultiplier tube (PMT) is directly controlled by programmable logic gate array (FPGA). With this system, we measured and analyzed fluorescence lifetimes of CsPbBr3 at different concentrations.

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S8. Thin Film and Photovoltaic Technology

Poster Session II
Saturday, Dec. 2, 2023  13:30-16:30
Room: Building of Electrical Engineering (電機系館) (B1)

Manuscript ID.  0698
Paper No.  2023-SAT-P0802-P001
Yu-Hao Chung Characteristics of Epitaxial Gallium Nitride on Sapphire and 6H-Silicon Carbide Substrates
Yu-Hao Chung, Hung-Sheng Liu, Sheng-Hui Chen, National Central University (Taiwan)

In this research, we have effectively fabricated gallium nitride (GaN) films on sapphire and 6H-silicon carbide (6H-SiC) substrates through the utilization of high power impulse magnetron sputtering at a low epitaxial temperature. High-power pulsed magnetron sputtering stands as an exceptional surface treatment method, providing benefits including rapid deposition, high uniformity, robust adhesion, and accurate thickness management. Furthermore, its deposition rate exceeds that of the conventional radio-frequency sputtering technique.

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Manuscript ID.  0778
Paper No.  2023-SAT-P0802-P002
Kai-Cheng Wu Design and Fabrication of Defrosting Antireflective Coatings through the Incorporation of Indium-Tin-Oxide Layer
Kai-Cheng Wu, Chien-Jen Tang, Feng Chia University (Taiwan)

This study investigates different indium-tin-oxide thicknesses for designing defrosting anti-reflective coating. The films were prepared by plasma-assisted reactive magnetron sputtering. The heating characteristics indicated that 1mm of ice on the antireflective coating with an indium-tin-oxide layer (physical thickness of about 250 nm) was wholly removed after 60 seconds when the applied voltage was 12 V.

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Manuscript ID.  0929
Paper No.  2023-SAT-P0802-P003
Chien-Tsung Li Optical and Electrical Properties of Ni-doped Copper Oxide Nanostructured Thin Films
Chien-Tsung Li, Bu-Jine Liu, Wei-Cheng Jiang, YongMan Choi, Optoelectronic system (Taiwan)

Nanoscale metal oxide materials have been extensively studied due to their unique dimension-dependent physical and chemical properties. The sol-gel thin film approach using spin coating is utilized to prepare Ni-doped copper oxide photodetector materials.

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Manuscript ID.  0321
Paper No.  2023-SAT-P0802-P004
Zhen-Jun Hong The dual absorption layer structure of a-Si:H/a-SiOx:H p-i-n solar cells
Yeu-Long Jiang, Yi-Nuo Huang, Zhen-Jun Hong, National Chung Hsing University (Taiwan)

The figure of merit (FOM) of semitransparent solar cells is limited by either high transmittance and low efficiency or low transmittance and high efficiency. The dual absorption layer structure of a-Si:H/a-SiOx:H solar cells combines the energy gap difference (EgL/EgH) and the thickness ratio (DL/DH) to regulate the transmittance and efficiency,aiming to find the optimal FOM. Furthermore,to enhance the light transmission through the n-layer, CO2 gas is introduced to create a high bandgap thin film. The dual absorption layer structure cell with (EgL/EgH=1.704 eV/1.946 eV,DL/DH=50 nm/50 nm) achieves efficiency, average transmittance (400-650 nm), and optimal FOM of 3.09%, 37.92%, and 99.

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Manuscript ID.  0665
Paper No.  2023-SAT-P0802-P005
Jing-Suei Ni Preparation of Amber-Red Perovskite CsPbBr1.3I1.7 by Solution Method and Improvement by Interface Modification Engineering
Jing-Suei Ni, Ting-Lei Chen, Lung-Chien Chen, National Taipei University of Technology (Taiwan); Ching-Ho Tien, Ming Chi University of Technology (Taiwan)

Light-emitting diodes (LEDs) are widely used today in fields such as lighting and displays [1]. Among them,perovskite LED with dimmable performance has become a research hotspot [2,3], and the demand for backlight sources of LCD screens has also increased, which has higher requirements for phosphor materials. It is difficult to achieve the ideal color rendering effect when using traditional phosphors with blue chips, but tetravalent manganese red phosphors solve this problem [4,5]. However, tetravalent manganese phosphors contain fluorine,which may cause the risk of pollution in the production line, limiting its large-scale application.

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Manuscript ID.  0477
Paper No.  2023-SAT-P0802-P006
Jin-Cherng Hsu Cesium Iodide Preparation at Different Substrate Temperatures and Variation Study
Chia-Tung Chang, National Taipei University of Technology (Taiwan); Hsuan-Han Chen, National Chi Nan University (Taiwan); Wei-Yu Chen, Fu Jen Catholic University (Taiwan); Jin-Cherng Hsu, Fu Jen Catholic University (Taiwan), National Central University (Taiwan)

This study investigates the fabrication of cesium iodide optical films. By controlling variations in substrate temperature during the fabrication process, the study utilizes X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), and X-ray Luminescence Spectroscopy (XL) to measure and analyze the thin film. Additionally, X-ray irradiation of the film is used for imaging purposes. The results reveal that the best crystalline structure and luminescent performance are achieved when preparing the CsI at a substrate temperature of 200°C.

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Manuscript ID.  0072
Paper No.  2023-SAT-P0802-P007
ZHAN-QUAN XU Study on the Application of Carbon Black Materials as Counter Electrodes in Dye-Sensitized Solar Cells.
Chi-Feng Lin, ZHAN-QUAN XU, Chien-Shun Liang, National United University (Taiwan)

This study explores the potential of using composite carbon black (N134) as a substitute for platinum in dye-sensitized solar cells. Through optimization and refinement experiments at different concentrations (3M, 4M, 5M) and spinning speeds (2000-4000 rpm), we achieved a superior performance of the composite carbon black counter electrode in dye-sensitized solar cells, with a maximum efficiency of 6.55% and fill factor of 57.34%. These results suggest composite carbon black as a promising, cost-effective alternative to platinum, providing valuable insights for dye-sensitized solar cell technology

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Manuscript ID.  0520
Paper No.  2023-SAT-P0802-P008
Bai-Cheng Tu Investigation of Co-sputtering InGaO Photodetector with different Indium contents
Yu-Chung Wei, National Cheng Kung University (Taiwan); Sheng-Po Chang, National Kaohsiung University of Science and Technology (Taiwan); Bai-Cheng Tu, National Cheng Kung University (Taiwan); Chih-Hung Lin, Taiwan Semiconductor Research Institute (Taiwan); Shoou-Jinn Chang, Jone-Fang Chen, National Cheng Kung University (Taiwan)

In this study, we fabricated co-sputtered indium gallium oxide ultraviolet photodetectors. The power of the gallium oxide target was fixed at 80W, while the power of the indium oxide target was varied at 20W, 30W, 40W. Device with 30W/80W has the biggest sensitivity of 5.20x10^3, and the device with 40W/80W has the biggest responsivity of 1.72x10^2 A/W. Response/Recovery time increase as the indium doping increased, and then decrease while excessive indium doping.

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Manuscript ID.  0832
Paper No.  2023-SAT-P0802-P009
Hsiang-Yun Chang Fabrication of Indium Gallium Zinc Oxide Thin-film-transistor by Pulsed Magnetron Sputtering
Hsiang-Yun Chang, Yu-Hung Lin, Yi-Nung Chao, Sheng-Hui Chen, National Central University (Taiwan)

Utilizing pulsed magnetron sputtering, high-quality IGZO films were deposited by adjusting the oxygen flow rate and the duration of UV light irradiation on the substrates. This adjustment resulted in films with elevated carrier concentration and minimal surface roughness. Subsequently, this superior films were utilized in the fabrication of thin film transistors. Notably, the channel layer was innovatively designed with a double-layer structure, thereby further enhancing the carrier mobility and On/Off ratio of the device.

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Manuscript ID.  0545
Paper No.  2023-SAT-P0802-P010
Yu-Hsien Chu Photoluminescence Imaging Analysis of Alumina Passivation Thin Films in Solar Cell
Yu-Hsien Chu, Yu-Chun Huang, Keh-Moh Lin, Southern Taiwan University of Science and Technology (Taiwan); Chih-Chiang Yang, Kun Shan University (Taiwan); Tsung-Chieh Wu, Southern Taiwan University of Science and Technology (Taiwan); Yan-Kuin Su, Kun Shan University (Taiwan), National Cheng Kung University (Taiwan)

Investigated alumina passivation films on silicon solar cells using atmospheric pressure atomic layer deposition. Enhanced passivation achieved through post-annealing process, compared traditional tube annealing furnace and microwave annealing.
Photoluminescence (PL) imaging and effective minority carrier lifetime (τeff) evaluated passivation. At 400°C annealing, significant lifetime improvement observed. Microwave annealing correlated photoluminescence and minority carrier lifetime trends. Imaging assessed localized passivation quality. Optimal interface state found at 1.5-2.5 nm intermediate layer thickness.

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Manuscript ID.  0077
Paper No.  2023-SAT-P0802-P011
Kara Hsu Deterioration Study for Ag3PO4-Na2SiO3 to the Photodegradation of RhB
Kara Hsu, Yong-Yu Chen, Wei-Lin Su, Wei-Chin Yeh, Weh-How Lan, National University of Kaohsiung (Taiwan)

The Ag3PO4-Na2SiO3 film was prepared by spray pyrolysis at 100oC on glass substrate. The film surface morphology and compositions were examined. The non-uniformed distribution of Ag3PO4-Na2SiO3 with Na2SiO3 gathering was characterized. With repeated operation by the degradation of rhodamine B (RhB) aqueous under visible light illumination, the reduction of photocatalytic ability was observed. With film morphology and crystalline analysis for the pristine and post operated sample, the mechanism for reduced photocatalytic ability of the film was discussed and realized.

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Manuscript ID.  0957
Paper No.  2023-SAT-P0802-P012
Ai-Ling Shih Analyzation of The Microstructure of Extreme Ultraviolet Mo/Si Multilayer Mirrors by Ion Beam Sputtering Deposition System
Ai-Ling Shih, Kuan-Chieh Huang, National Central University (Taiwan); Chao-Te Lee, Wen-Hao Cho, Taiwan Instrument Research Institute (Taiwan); Chien-Cheng Kuo, National Central University (Taiwan)

The reflectance of the Extreme Ultraviolet (EUV) multilayer mirror is an important parameter that determines the production capacity in the EUV lithography technology. The reflectance of the EUV multilayer mirror is always lower than the theoretical value due to the Mo and Si materials maxing and diffusing with each other. Thus, in this study, ion beam sputter deposition system was used to fabricate Mo/Si multilayers and B4C layer was added to reduce the thickness of interface diffusion. The Mo-on-Si interface and Si-on-Mo interface diffusion thickness decreased from 0.7nm and 0.46nm to 0.43nm, respectively, after the B4C layer was added.

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Manuscript ID.  0722
Paper No.  2023-SAT-P0802-P013
Chia-Tse Hsu Rapid Crystal Growth of Quasi-Two-Dimensional Perovskite Single Crystals for Solar Applications Using Alcohols Additives
Yu-Ze Zhang, Chia-Tse Hsu, Fang-Chung Chen, National Yang Ming Chiao Tung University (Taiwan)

Quasi-two-dimensional perovskite single crystals are grown through vapor-venting space-limited crystallization method and used for fabricating solar cell devices. In order to accelerate the crystal growth rate, we add primary alcohols to the perovskite precursor solution to modify their solubilities. As a result, the crystal grown time is reduced to 5 h and a high power conversion efficiency of ca. 16% is achieved. We anticipate that the rapid crystal growth method will benefit the future mass production of single-crystal perovskite solar cells.

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Manuscript ID.  0024
Paper No.  2023-SAT-P0802-P014
Ting-Yi Xia Investigation of Electrochromic Properties of Novel Tungsten Trioxide Nanorods Preparation Using Hydrothermal Process
Ting-Yi Xia, Jia-Suei Wang, Cheng-Jui Tsai, Wen-Jen Liu, I-Shou University (Taiwan)

The purpose of this study is to fabricate the tungsten trioxide (WO3) nanorods (NRs) films by hydrothermal process and investigate the relationship between microstructure morphologies and electrochromic properties. It was found the optimal process parameters were the Na2WO4 concentration of 0.25M, the pH of 2.2, the capping agent of 0.0075mol, the growth temperature of 180oC and the growth time of 2 hr. It revealed the optimal process parameters samples possessed best electrochromic properties is due to having high specific surface area and porous structure which resulted in more easily react with lithium ion (Li+) in the electrolyte.

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Manuscript ID.  0032
Paper No.  2023-SAT-P0802-P015
Sheng-Huang Wu Hetero-nanostructure of Cuprous Oxide Nanowires and Zinc Oxide Nano-particles Powered by WO3 and DSSC for Hydrogen Generation Application
Sheng-Huang Wu, Wen-Jen Liu, I-Shou University (Taiwan)

In this study, a couple of WO3/DSSC tandem photoanode and Cu2O/ZnO photo-cathode irradiated with simulated sunlight for photo-electrochemical (PEC) hydrogen generation application was demonstrated. WO3 nanorods (NRs) was connected to the Pt-counter electrode of a dye-sensitized solar cell (DSSC), and dye-sensitized TiO2 of the DSSC was wired to the hetero-nanostructure composed of P-type Cu2O nanowires (NWs) and N-type ZnO nanoparticles (NPs). Experimental results revealed that the solar to hydrogen conversion efficiencies of Cu2O and Cu2O/ZnO-10s (ZnO NPs deposited for 10s) were about 3.51% and 5.63%, respectively. This system could be considered to perform artificial photosynthesis application in our future research.

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Manuscript ID.  0025
Paper No.  2023-SAT-P0802-P016
Ching-Lun Lu Study of Dye Sensitized Solar Cell (DSSC) Application of TiO2 Films by Atmospheric Pressure (AP) Plasma Deposition Method
Ching-Lun Lu, Jia-Zhen Li, Chiao-Lin Hsu, Wen-Jen Liu, I-Shou University (Taiwan)

In-organic precursor (titanium tetraisopropoxide, TTIP) was used to form TiO2 films, and the effects of the deposition times on the characteristic and microstructure had been investigated. Moreover, the atmospheric pressure (AP) plasma system was used to study the core deposition technology of high specific surface area and well-aligned TiO2 nano-dendrites (TNDs) films served as photo-anode for the DSSCs applications. Up to date, the optimal TNDs films with an extra high deposition rate of ~1m/min revealed the best photo-conversion efficiency of 12.08% for adopting N719 dye and iodine ion electrolyte, under illumination of simulated AM1.5 solar light (100 mWcm−2).

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Manuscript ID.  0215
Paper No.  2023-SAT-P0802-P017
Ting-Jia Chen Effects of annealing on the structure and optical properties of hydrogenated amorphous silicon thin films
Yeu-Long Jiang, Yu-You Su, Ting-Jia Chen, National Chung Hsing University (Taiwan)

Hydrogenated amorphous silicon thin films possess a tunable bandgap. By adjusting the bandgap, these thin films can selectively absorb light of different wavelengths. Annealing can adjust the bandgap of hydrogenated amorphous silicon thin films. As the annealing temperature increases, the Si-H bonds, Si-H2 bonds, and Si-H2 ratio decrease, leading to a smaller bandgap of the film. As the bandgap decreases, the optical properties of the film increase, and the absorption wavelength shifts towards longer wavelengths.

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Manuscript ID.  0285
Paper No.  2023-SAT-P0802-P018
Kuan-Fu Liu Effect of Ge Doping in Cu2ZnSnS4(CZTS) Absorption Layer
Kuan-Fu Liu, Fang-I Lai, Yuan-Ze University (Taiwan); Jui-Fu Yang, Chang Gung University (Taiwan); Shou-Yi Kuo, Chang Gung University (Taiwan), Chang Gung Memorial Hospital (Taiwan); Po-Ting Wang, Yuan-Ze University (Taiwan)

In this work, Ge was doped into Cu2ZnSnS4 (CZTS) absorber to replace Sn, and after Ge doped into absorber layer, it can boost the grain size. And the Cu2ZnSn1-xGexS4 (CZTGS) sample has larger band gap (1.32 eV) than the CZTS sample (1.28 eV). In this work, all the precursors were used thermal evaporation to fabricate, and Ge was doped on the top of precursors. After the sulfurization, CZTS and CZTGS were formed respectively. All the samples were used thermal field emission scanning electron microscope (FE-SEM) and UV-VIS-NIR to investigate the structure and optical properties.

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Manuscript ID.  0996
Paper No.  2023-SAT-P0802-P019
Yu-Ching Chien Study of lead-free MASnI3 perovskite photodetectors prepared by inverse temperature crystallization method
Yu-Ching Chien, Haixing Chang, Lung-Chien Chen, Taipei University of Technology (Taiwan)

In this work, we report a lead-free MASnI3 perovskite photodetectors prepared by inverse temperature crystallization method. The MASnI3 perovskite photodetectors in this experiment has the highest photocurrent value in green region among the five monochromatic lights with a photocurrent of 2 μA. The manufacturing process is relatively simple, so it can be easily manufactured.

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Manuscript ID.  1046
Paper No.  2023-SAT-P0802-P020
Bo-Huei Liao Antireflection coating with high hardness deposited by HIPIMS deposition technique
Bo-Huei Liao, Chih-Chung Chou, Taiwan Instrument Research Institutes (Taiwan)

In this research, silicon nitride and silicon oxynitride films are prepared by a combined high-power impulse and closed field unbalanced magnetron sputtering (HIPIMS/CFUBMS) deposition technique. A multilayer AR coating with AF films is deposited on one side sapphire. Its average transmittance is 90.6 % and its Mohs hardness is larger to 8.The color coordinate ΔC is 2.7 and the contras ratio increased from 1.7 to 2.7.

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Manuscript ID.  0097
Paper No.  2023-SAT-P0802-P021
Yin-Yen Lin Self-assemble SiO2 Microlens Array Film for enhancing Efficiency in OLED
Yin-Yen Lin, Su-Hua Chen, Mao-Kuo Wei, Bo-Yen Lin, National Dong Hwa University (Taiwan)

We reported a cost-effective method for fabricating a self-assemble micro-lens array film (MAF) of SiO2 particles to enhance the efficiency and angular spectral stability of organic light emitting diodes (OLEDs). The film is fabricated through spin-coating technique,resulting in a high filling factor of 92.99%. The SiO2 MAF exhibits exceptional optical properties, with an impressive average transmittance of 94.9% and a haze of 93.98% in the ultraviolet-visible range. Compared to reference OLEDs, OLED with MAF demonstrated an increase in luminescence in angular measurement, reaching an enhancement of 25.6%.Furthermore, both the current and power efficiencies were enhanced by 17%.

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Manuscript ID.  0679
Paper No.  2023-SAT-P0802-P022
Che-Hong Wu Fabrication of germanium/germanium oxide SWIR narrowband filter
Che-Hong Wu, Liang-Ting Wu, National Central University (Taiwan); Gui-Sheng Zeng, National Applied Research Laboratories (Taiwan); Sheng-Hui Chen, National Central University (Taiwan)

In this research, leveraging the attributes of germanium/germanium oxide thin films, pulsed magnetron sputtering apparatus was employed to generate high and low refractive index thin films, characterized by commendable properties across diverse gas parameters. Following the input of these parameters into Macleod thin-film software for computation, we designed multi-layered film arrangements targeting center wavelengths of 1550nm and 1350nm. This approach facilitated the creation of filters featuring center wavelength transmittance exceeding 80%, while concurrently minimizing coating time via the application of low-thickness filters.

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Manuscript ID.  1127
Paper No.  2023-SAT-P0802-P023
Bing-shin Le The influence of deposition power and annealing temperature on the characteristics of indium zinc oxide films deposited by RF magnetron sputtering
Yih-Shing Lee, Bing-shin Le, Department of Semiconductor and Electro-Optical Technology, (Taiwan); Kai-Ching Ma, Department of Electronic Engineering, (Taiwan); Yu-Nan Den, Vo- Truong Thao Nguyen, Thi- My Tien Nguyen, Department of Semiconductor and Electro-Optical Technology, (Taiwan)

In this work, the influence of different deposition powers and annealing temperatures on the optical and electrical properties of indium zinc oxide (IZO) films was studied. Experimental results showed that, IZO films deposited with a power of 125W and annealing at 300°C exhibited the best electrical and optical properties, with the lowest resistivity of 1.43×10-3 Ω·cm, the highest carrier mobility of 11.12 cm2/V-s, and a carrier concentration of 4.61 ×1020 cm-3. The average transmittance in the wavelength range of 400 to 800 nm was 82.57%, and the optical energy gap was determined to be 3.372 eV

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S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology V
Saturday, Dec. 2, 2023  16:00-17:00
Presider: Prof. Wan-Yu Wu (National United University, Taiwan) Prof. Horng-Long Cheng (National Cheng Kung University, Taiwan)
Room: 92283 (2F)
16:00 - 16:15
Manuscript ID.  0753
Paper No.  2023-SAT-S0805-O001
Yun-Ping Chiu Study of Interfacial Effect in Nanowire with 2D Material Encapsulated System Using DFT Calculation
Yun-Ping Chiu, Chi-Yuan Kuo, Chih-I Wu, Yuh-Renn Wu, National Taiwan University (Taiwan)

Recent research has made 2D materials cladding a key player in enhancing nanowire performance by reducing electromigration (EM) and surface roughness scattering (SRS). Using the DFT method, this study explored Cu, Al, and Co metals with graphene, h-BN, and MoS2 interface. Projected band structure and electrostatic potential result indicate Cu and Al primarily exhibit physical adsorption, and Co mainly forms chemical adsorption. The Co-graphene system demonstrated superior SRS suppression, and the anchor effect serves additional EM resistance, offering wire performance enhancements.

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16:15 - 16:30
Manuscript ID.  0158
Paper No.  2023-SAT-S0805-O002
Zhi-Wei Chen Thick Molybdenum Disulfide Film Growth and Photovoltaic Responses of Vertical 2D Material Devices
Zhi-Wei Chen, National Yang Ming Chiao Tung University (Taiwan), Academia Sinica (Taiwan); Yu-Han Huang, Academia Sinica (Taiwan), National Taiwan University (Taiwan); Po-Tsung Lee, National Yang Ming Chiao Tung University (Taiwan); Shih-Yen Lin, Academia Sinica (Taiwan)

This report discusses the growth mechanism due to the unique properties of multilayer 2D materials combining organic and semiconductor materials. Controlling the time of sputtering Mo, MoS2 with different layers can be grown from monolayer up to above 15 layers. Then, by identifying HRTEM, it can be found that when MoS2 reaches more than 15 layers, there are some clusters in the layered structure, so the stacking layered MoS2 becomes messy. Therefore, we chose 10 layers MoS2 to fabricate 2D solar cells and found that its spectral response has an obvious cut-off at near 700 nm under zero bias.

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16:30 - 16:45
Manuscript ID.  0350
Paper No.  2023-SAT-S0805-O003
Jin-Cheng Chen Modeling and Understanding of Industrial Bifacial Passivated Contacts Solar Cells With SiC/SiO2 as Front Transparent Passivated Contacts
Jin-Cheng Chen, Yi-Ping Lin, You-An Li, Wei-Shan Hong, National Yang Ming Chiao Tung University (Taiwan); Han-Chen Chang, Industrial Technology Research Institute (Taiwan); Ying-Yuan Huang, National Yang Ming Chiao Tung University (Taiwan), National Cheng Kung University (Taiwan)

This research investigates the prospective performance of SiC/SiO2 as front transparent passivated contacts in industrial bifacial passivated contacts solar cells using Sentaurus TCAD for optical raytracing and Quokka2 for electrical simulations. Our simulations suggest an estimated efficiency improvement of approximately 2.4% for front SiC/SiO2 passivated contacts as compared to poly-Si/SiO2 front contacts. The simulations further indicate the possibility of achieving a remarkable performance of approximately 25% through industrial-compatible processes with the proposed bifacial passivated contacts structure.

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16:45 - 17:00
Manuscript ID.  0597
Paper No.  2023-SAT-S0805-O004
Zi-Long Wei Optical Stability Analysis of Antireflection Coating with Alumina Capping Layers Deposited by Electron-Beam Evaporation
Zi-Long Wei, BASO Precision Optics LTD. (Taiwan), Feng Chia University (Taiwan); Chien-Jen Tang, Feng Chia University (Taiwan)

Antireflection coating produced using the electron gun evaporation undergoes reflectance spectra changes over time, resulting in variations in the reflectance spectra converted to CIE xy. Through analysis using the Essential Macleod Software, the reasons for these changes were identified, and a new method was proposed to stabilize the reflectance spectra and chromaticity coordinate.

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S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology VI
Sunday, Dec. 3, 2023  09:00-11:00
Presider: Prof. Wan-Yu Wu (National United University, Taiwan) Prof. Chao-Yu (Peter) Chen (National Cheng Kung University, Taiwan)
Room: 92283 (2F)
09:00 - 09:15
Manuscript ID.  0216
Paper No.  2023-SUN-S0806-O001
Po-Chih Chu In-situ Investigation of Lithium-ion Batteries with High-Entropy Oxides anode via Novel Surface Analysis Techniques
Po-Chih Chu, National Sun Yat-Sen University (Taiwan); Ya-Ping Liu, National Central University (Taiwan); Chia-Jou Lin, National Sun Yat-Sen University (Taiwan); Wei-Hsuan Hung, National Central University (Taiwan); Wei-Chun Lin, National Sun Yat-Sen University (Taiwan)

In this study, we investigate the electrical properties and surface chemistry of MgNiCoZnCu high-entropy oxides (HEOs), which is used as anode material in lithium-ion batteries (LIBs). The composition and chemical state of the material was examined by X-ray Photoelectron Spectroscopy (XPS). Ultraviolet Photoelectron Spectroscopy (UPS) and Low Energy Inverse Photoelectron Spectroscopy (LEIPS) are used to investigate the band structure information. The quantification and bandgap variations of HEOs are crucial for discovering electrochemical properties and battery performance during the operation. Our goal is to reveal the formation of irreversible capacitances of HEOs materials and the HEOs electrode working mechanisms in LIBs.

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09:15 - 09:30
Manuscript ID.  0270
Paper No.  2023-SUN-S0806-O002
Hong-Cheng Kuo Incorporation of Vertically Oriented Graphene Nanoflakes Doped PC61BM in Inverted Structure Perovskite Solar Cells
Hong-Cheng Kuo, Chun-Wei Liu, National Yang Ming Chiao Tung University (Taiwan); Mei-Hsin Chen, National Taipei University of Technology (Taiwan); Wei-Shiuan Tseng, National Yang Ming Chiao Tung University (Taiwan)

The electron transport layer (ETL) is a critical part affecting the electron extraction of perovskite solar cells (PSCs). In this study, vertically oriented graphene nanoflakes (GNF) were synthesized by Plasma Enhanced Chemical Vapor Deposition (PECVD) system and successfully introduced into the ETL (PC61BM) of inverted perovskite solar cells. The best power conversion efficiency of PC61BM:GNF device achieved 15.34%, which is much higher than 13.06% of the one without GNF. Furthermore, all photovoltaic characteristics were improved such as Voc from 1.019 V to 1.07 V, Jsc from 18.745 mA/cm2 to 19.489 mA/cm2, and FF from 68.39% to 73.8% after GNF incorporation.

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09:30 - 09:45
Manuscript ID.  0694
Paper No.  2023-SUN-S0806-O003
Chun-Han Wu Growth of Sp2-bonded BN Thin Films on Si(111) Using Low-Pressure Chemical Vapor Deposition
Chun-Han Wu, Jian-Yu Li, Zhong-Jun Jiang, Sheng-Hui Chen, National Central University (Taiwan)

The sp2-bonded boron nitride film demonstrates remarkable thermal conductivity and insulating characteristics. In this research, sp2-bonded BN thin films were grown on the Si(111) substrate utilizing two distinct precursor injection approaches. High-resolution scanning transmission electron microscopy was employed to measure and analyze the sp2-bonded boron nitride films under varying precursor injection methods.

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09:45 - 10:00
Manuscript ID.  0899
Paper No.  2023-SUN-S0806-O004
Shin-Yu Lai Effect of NiO interlayer on the optical and the electrical properties in CuAlO2/NiO/CuAlO2 sandwich structure
Shin-Yu Lai, Tzu-Chun Chen, Balaji Gururajan, Wei-Sheng Liu, Yuan Ze University (Taiwan)

We demonstrate the advantage of using NiO as the interlayer with CuAlO2 to form a CuAlO2/NiO/CuAlO2 composite structure deposited using RF magnetron sputtering. Only P-type layers were used for the fabrication as there is a need to enhance the electrical and optical properties of P-type TCOs. Structural, optical, morphological, and electrical properties were studied for the composite structure.

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10:00 - 10:15
Manuscript ID.  0223
Paper No.  2023-SUN-S0806-O005
Shailesh Rana Exciton Dynamics in CH3NH3PbI3 Perovskite Film: Illumination Power-Dependent Electroabsorption
Shailesh Rana, Kamlesh Awasthi, Eric Wei-Guang Diau, Nobuhiro Ohta, National Yang Ming Chiao Tung University (Taiwan)

The influence of the electric field in hybrid halide perovskite materials plays a crucial role in comprehending intriguing optoelectronic phenomena. Here, we report the electroabsorption (E-A) spectra, that is, electric field-induced change in absorption spectra, of methylammonium lead tri-iodide (MAPbI3) film sandwiched between fluorine-doped tin oxide (FTO) and poly(methyl methacrylate) (PMMA) film in both tetragonal and orthorhombic phases. The observed E-A spectra demonstrate the sensitivity to the light illumination power density (IL-D) at a low modulation frequency (M-F) of the applied electric field (Fa). However, this dependence of E-A spectra on IL-D diminished when the M-F was high.

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10:15 - 10:30
Manuscript ID.  0299
Paper No.  2023-SUN-S0806-O006
Yen-Chi Wang Rapid Preparation of Silver Nanowires by Magneto-Oscillating Polyol Method on Polydimethylsiloxane as Highly Transmittance Conductive Substrate
Yen-Chi Wang, Hsi-Chao Chen, Chih-Yuan Chang, Guan-Yu Lin, You-Wei Chang, Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan (Taiwan); Ying-Sheng Lin, National Taiwan University Hospital Yunlin Branch (Taiwan); Yi-Zhen Shih, Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan (Taiwan)

The research is to prepare silver nanowires (Ag NWs) grown by polyol synthesis with magnet oscillation. When the synthesis temperature is 160°C, the concentration of sodium chloride is 0.0002M and the molecular weight of PVP is 1,300,000 M.W, the optimal Ag NWs are produced. The characteristic of the experiment is that no centrifugation is required and the total process time is only 1 hour. Ag NWs combined with polydimethylsiloxane (PDMS), the impedance is reduced by 3 times by thermal annealing at 200C. The transmittance can reach 57.7%, which can be used as a transparent and stretchable conductive sensor substrate.

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10:30 - 10:45
Manuscript ID.  0669
Paper No.  2023-SUN-S0806-O007
Yi-Ching Ou Yang Fabrication of Silicon-based Two-dimensional Molybdenum Disulfide Films
Yi-Ching Ou Yang, Sheng-Ru Chiu, National Central University (Taiwan); Gui-Sheng Zeng, National Applied Research Laboratories (Taiwan); Sheng-Hui Chen, National Central University (Taiwan)

The two-dimensional (2D) material molybdenum disulfide (MoS2) has attracted significant attention as a potential semiconductor material for the next generation due to its unique structure and properties. This research aims to develop a technique for directly growing two-dimensional MoS2 films on silicon-based SiO2 films. The objective is to mitigate the issues arising from transfer-induced integrity problems, alignment challenges, and impurities. This approach aims to streamline the process steps while delving into its potential as the next-generation semiconductor material.

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10:45 - 11:00
Manuscript ID.  1067
Paper No.  2023-SUN-S0806-O008
You-An Li Simulation and design optimization of interdigitated back contact silicon solar cells with dopant-free asymmetric hetero-contacts
You-An Li, Jin-Cheng Chen, Yi-Ping Lin, Wei-Shan Hong, National Yang Ming Chiao Tung University (Taiwan); Ying-Yuan Huang, National Yang Ming Chiao Tung University (Taiwan), National Cheng Kung University (Taiwan)

This study employs Quokka 2 simulations to optimize the design of interdigitated back contact (IBC) silicon solar cells with dopant-free asymmetric hetero-contacts. We focus on the impact of varying hole and electron transport layer (HTL and ETL) widths and the gap between them on cell efficiency for both n-type and p-type substrates. Our results indicate that optimizing the gap width to 5 μm using advanced shadow-mask patterning can enhance cell efficiency from 23.9% to 24.7%, offering a pathway for cost-effective, high-efficiency IBC solar cells.

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S8. Thin Film and Photovoltaic Technology

Poster Session III
Sunday, Dec. 3, 2023  09:00-11:00
Room: Building of Electrical Engineering (電機系館) (B1)

Manuscript ID.  0026
Paper No.  2023-SUN-P0803-P001
Yu-Lin Zhu Hetero-nanostructures of Copper Sheet Grown Cuprous Oxides and Zinc Oxides Deposited by Atmospheric Pressure Plasma System for Photo-electro-chemical Hydrogen Generation Application
Yu-Lin Zhu, Kun-Ying Zhang, Hao-Yu Lee, Wen-Jen Liu, I-Shou University (Taiwan)

Cu2O nanowires (NWs) grown by the hybrid process of atmospheric pressure plasma oxidation at 300°C for 10 min and thermal oxidation at 300°C for 50 min, revealed the optimal photocurrent density was -2.92 mA/cm2 measured at 0 V (RHE). The formation of PN junctions hetero-structure resulted in the effective and rapid separation of electron-hole pairs occurred on the electrode surfaces and enhanced the redox reactions. The deposition of ZnO nanoparticles (NPs) on the surface of Cu2O NWs with optimal photocurrent density was -7.72 mA/cm2 measured at 0 V (RHE). The solar-to-hydrogen (STH) conversion efficiency was 1.73% for ZnO/Cu2O photocathode.

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Manuscript ID.  0514
Paper No.  2023-SUN-P0803-P002
Zhi-Wen Lin Enhancing the Efficiency of Triple-Cation Perovskite Solar Cells by Different Cationic-based Chloride Doping Ratios
Zhi-Wen Lin, Wei-Shuo Lai, National Taipei University of Technology (Taiwan); Ching-Ho Tien, Ming Chi University of Technology (Taiwan); Lung-Chien Chen, National Taipei University of Technology (Taiwan)

We discuss the effect of the perovskite film in different doping ratios of the cesium
chloride (CsCl) and methylamine hydrochloride (MACl). Finally, the solar cell prepared with
Cs0.1MA0.09FA0.81PbCl0.14I2.86 as the active layer has the best photovoltaic characteristics, and
its PCE reaches 18.6%.

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Manuscript ID.  0519
Paper No.  2023-SUN-P0803-P003
Jhih-Rong Chen Impact of oxygen partial pressure on resistive switching characteristics of ZWO thin films RRAM devices
Tzu-Yuan Liu, National Cheng Kung University (Taiwan); Sheng-Po Chang, National Kaohsiung University of Science and Technology (Taiwan); Chih-Cheng Cheng, Fu-Yuan Jheng, Jhih-Rong Chen, Jone-Fang Chen, Shoou-Jinn Chang, National Cheng Kung University (Taiwan)

In this study, the effect of different oxygen partial pressures on ZnWO4 based RRAM devices was investigated. The results show that films with excessive partial pressure exhibit lower HRS/LRS ratios as well as centralized formation voltage. These outcomes point to a strong correlation between the oxygen partial pressure and the filament formation mechanism.

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Manuscript ID.  0151
Paper No.  2023-SUN-P0803-P004
An-Hsiung Cheng Hybrid Deposition of E-gun Evaporation and RF Magnetron Sputtering for Molybdenum Trioxide Doped Titanium Dioxide on Electrochromic Devices
An-Hsiung Cheng, Hsi-Chao Chen, Yu-Xuan Zhuang, Chi-Kai Feng, Xiang-Zhe Lin, Rong-Ling Ni, Hong-Jie Lin, National Yunlin University of Science and Technology (Taiwan)

This paper investigates the hybrid deposition of E-gun evaporation and RF magnetron sputtering for molybdenum trioxide (MoO3) doped titanium dioxide (TiO2) used on complementary electrochromic devices. The main electrochromic layer consists of MoO3 doped with TiO2, and the auxiliary electrochromic layer is made of nickel oxide (NiO). X-ray diffraction (XRD) analysis confirmed the formation of a beneficial orthorhombic phase α-MoO3, which contributes to the electrochromic effects. However, the transmittance variation (ΔT) of device can reach 61.3% at 550nm. The response times for coloring (tb) and bleaching (tc) are 8 seconds and 9 seconds, respectively.

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Manuscript ID.  0192
Paper No.  2023-SUN-P0803-P005
Ji-You Yu Conductivity Study of (InxGa1-x)2O3 by Spray Pyrolysis
Ji-You Yu, Ming-Chang Shih, National University of Kaohsiung (Taiwan); Mu-Chun Wang, Minghsin University of Science and Technology (Taiwan); Wen-How Lan, National University of Kaohsiung (Taiwan)

The (InxGa1-x)2O3 films with different In/Ga ratio and HCl content in precursor were prepared by spray pyrolysis at 450oC. The film optical bandgap and temperature dependent electric conductivity were characterized. The electrical conductivity with reduced defect-related activation energy were characterized for the films with the increased In/Ga ratio in precursor. The reduced electrical conductivity was characterized for sample InGaO3 after 600oC anneal process prepared with 10% HCl in precursor. Shallow defects formed for sample after 700oC anneal process.the conductivity of the (InxGa1-x)2O3 with different activation energy for the film prepared by spray pyrolysis were characterized.

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Manuscript ID.  0222
Paper No.  2023-SUN-P0803-P006
Hsiang-Chen Wang Cancer Cell Image Analysis and its Photoelectrochemical Response on Biosensing Chips
Kuei-Ren Chen, Department of Mechanical Engineering and Advanced Institute of Manufacturing with High tech Innovations (Taiwan); Wei-Chung Chen, Ph.D. Program in Environmental and Occupational Medicine (Taiwan); I-Chen Wu, Department of Medicine and Graduate Institute of Clinical Medicine (Taiwan); Vladimir E Fedorov, Nikolaev Institute of Inorganic Chemistry (Russian Federation), Department of Natural Sciences, (Russian Federation); Ding Fong Lin, Hsiang-Chen Wang, Department of Mechanical Engineering and Advanced Institute of Manufacturing with High tech Innovations (Taiwan)

This study controlled the number of cancer cells at 2,500, 5,000, 7,500, 10,000, and the volume of the solution to be tested was set at 20 µl. The P-type biosensor has the most significant effect on intracellular GSH response, the measured The magnitude of the transient photocurrent will decrease with the number of cancer cells and the degree of canceration. According to the experimental results, the degree of canceration and the kind of cancer cells in each tube of pleural effusion can be quickly judged, and the regression analysis coefficient of determination.

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Manuscript ID.  0359
Paper No.  2023-SUN-P0803-P007
Yi-Ping Lin Numerical Modeling and Design Optimization of Industrial Tunnel Oxide Passivated Contact Solar Cells with Selective Passivated Contacts on the Front
Yi-Ping Lin, Jin-Cheng Chen, You-An Li, Wei-Shan Hong, National Yang Ming Chiao Tung University (Taiwan); Han-Chen Chang, Industrial Technology Research Institute (Taiwan); Ying-Yuan Huang, National Yang Ming Chiao Tung University (Taiwan), National Cheng Kung University (Taiwan)

This study investigates the benefits of front selective area TOPCon in industrial bifacial TOPCon solar cells, employing Sentaurus TCAD for optical ray tracing and Quokka2 for electrical simulations. Our simulations project a potential efficiency of approximately 25.2%, guided by optimal parameters from scholarly sources and the industrial standards reported in ITRPV 2023. Notably, a 25% efficiency is also attainable with a 150 μm wide selective TOPCon area, rendering this process more cost-effective and suitable for mass production.

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Manuscript ID.  0496
Paper No.  2023-SUN-P0803-P008
Wei-Ting Chen Nickel Sulfide/Nickel Nanowires Array Hybrid Counter Electrodes for Dye-Sensitized Solar Cells
Wei-Ting Chen, Peng-Chi Wang, Wei-Chen Tu, National Cheng Kung University (Taiwan)

In the study, we propose hybrid counter electrodes to improve the performance of dye-sensitized solar cells. The counter electrode with a concentration of 0.130 mg/ml of nickel nanowire array on the nickel sulfide film achieved the highest conversion efficiency of 8.94%. This efficiency was 1.57% higher than that of the traditional counter electrode material platinum in dye-sensitized solar cells. There is great potential to replace platinum as the electrode material in dye-sensitized solar cells, which would reduce costs and further advance the commercialization of dye-sensitized solar cells in the future.

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Manuscript ID.  0825
Paper No.  2023-SUN-P0803-P009
Li-Cheng Huang Growth and Characterization of GaN Thin Films on Si Substrates with AlN Buffer Layer and RF Sputtering
Li-Cheng Huang, Wei-Sheng Liu, Balaji Gururajan, Kuo-Jui Hu, Guo-Hong Shen, Yuan Ze University (Taiwan)

This study demonstrates high-quality GaN thin film deposition on Si(111) substrates via RF reactive magnetron sputtering. An AlN buffer layer alleviates lattice mismatch between silicon and GaN. Sputtering parameters optimization enhances GaN film quality. X-ray diffraction reveals dominant (002) phase (2θ ~ 34.5°) with narrow 0.96° FWHM in sputter-deposited GaN. At 10 K, photoluminescence spectra exhibit a 3.387 eV (~366 nm) emission peak.

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Manuscript ID.  0956
Paper No.  2023-SUN-P0803-P010
Kuan-Yu Ko Environment test of Anti-Reflection Coating on Plastic Substrate by Plasma Enhanced Atomic Layer Deposition
Kuan-Yu Ko, Jia-Lun Ho, National Central University (Taiwan); Wen-Hao Cho, Chao-Te Lee, Taiwan Instrument Research Institute (Taiwan); Chen-Cheng Kuo, National Central University (Taiwan)

In this study, plasma-enhanced atomic layer deposition (PEALD) method is used to deposit anti-reflection film on PMMA substrate. The oxidation method of oxygen mixed with argon plasma is used at low temperature process 70ºC. The TiO2 anti-reflective film can be extended to 998 hours without insertion into the inhibition layer under the condition of temperature 85°C and humidity 85%RH.

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Manuscript ID.  0149
Paper No.  2023-SUN-P0803-P011
Yu Hong Shih Research on Improving Epitaxial Growth of Gallium Oxide by Hydride Vapor Phase Epitaxy
Yu Hong Shih, Ming-Chi Chou, Hsin-Chih Chen, Chu-An Li, National Sun Yat-Sen University (Taiwan)

In this study, β-Gallium Oxide was grown on off-angled sapphire substrates by hydride vapor phase epitaxy. The crystal quality is optimized by changing the experimental conditions and annealing. And confirm through the instrument whether off-angle sapphire and
annealing are helpful for gallium oxide epitaxy. Single crystal film of β-Ga2O3 with a full-width half maximum of XRD rocking curve is 0.25 °

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Manuscript ID.  0386
Paper No.  2023-SUN-P0803-P012
Ming Chang Shih The Fabrication of an Al/SiO2/Si MIS Device and its Photo-Current Characteristics
Ming Chang Shih, I Chieh Wu, Yen Ju Wu, Wen-How Lan, National University of Kaohsiung (Taiwan)

We demonstrate the fabrication of an Al/SiO2/Si MIS device and the characterization of its photocurrent characteristics. An electron beam evaporation was used to deposit the amorphous type SiO2 dielectric layer. It is able to achieve a maximum responsivity of 0.03 A/W at a UV wavelength of 300 nm ~ 350 nm and with strong rejection against white light. Photocurrent of the MIS device with different thicknesses of SiO2 layer was studied. A photocurrent mechanism based on the photo-excited defect states of the amorphous SiO2 and the drifting mechanism was used to explain the results.

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Manuscript ID.  0912
Paper No.  2023-SUN-P0803-P013
Cheng-Chung Jaing The Effect of Oxygen-Plasma Treatment on the Optical and Surface Properties of Polydimethylsiloxane Layers
Chen-Chi Huang, Minghsin University of Science and Technology (Taiwan); Chao-Te Lee, National Applied Research Laboratories (Taiwan); Tan Dat Le, Cheng-Chung Jaing, Bing-Mau Chen, Yih-Shing Lee, Minghsin University of Science and Technology (Taiwan)

The optical and surface properties of the polydimethylsiloxane layers were investigated using a normal incidence spectrophotometer, variable incidence angle spectroscopic ellipsometry, and a contact angle measurement system after the surfaces of the polydimethylsiloxane layers were treated with low pressure oxygen plasma.

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Manuscript ID.  0139
Paper No.  2023-SUN-P0803-P014
Wei-Chin Yeh Conductivity Study of Annealed Sn-doped Ga2O3 by Spray Pyrolysis
Wei-Chin Yeh, Hsin-Hui Kuo, Jui-Yang Feng, Wen-How Lan, National University of Kaohsiung (Taiwan)

The Ga2O3 films with different Sn doping (Ga2O3:Sn) were prepared by spray pyrolysis at 450oC on p-Si substrate. The film deposition rate and electric conductivity for the Ga2O3:Sn films was studied. With post 800oC anneal process, enhanced film conductivity and small film thickness reduction were characterized. Film with enhanced conductivity 0.029 Scm-1 was characterized after 800oC anneal process for the film with 3% Sn doping in precursor. The post anneal process shows an effective method for conductivity enhancement for the Ga2O3:Sn film deposited by spray pyrolysis.

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Manuscript ID.  0290
Paper No.  2023-SUN-P0803-P015
DONG-MOU WUN Photocatalytic Performance of CuO(Copper Oxide) Thin Films by Pulsed Laser Deposition
CHENG-HAN GUO, DONG-MOU WUN, National Taipei University of Technology (Taiwan)

In this paper, the pulsed laser deposition method was used to grow the copper oxide film on the C-plane sapphire substrate. The experiment used the laser light source Nd:YAG laser, and the wavelength of the quadrupled frequency is 266nm, the pulse width was <10ns, and the pulse frequency is 10HZ. X-ray diffraction (XRD) is used to understand the quality of film growth;ultraviolet-visible spectrometer (UV-VIS) is used to measure the transmission spectrum of the film, and then the film is placed in methylene blue solution for photocatalytic experiments to understand the effect of its photocatalyst.

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Manuscript ID.  0897
Paper No.  2023-SUN-P0803-P016
Yun-Jui Yeh Effect of deposition pressure on the optoelectronic characteristics of p-type Cu-doped CrO2 thin films
Yun-Jui Yeh, Yu-En Chen, Bhavya Kondapavuluri, Tsung-An Yang, Sindu Gnanam A B, Sriranjani SIVASUBRAMANIAN, Balaji Gururajan, Wei-Sheng Liu, Yuan Ze University (Taiwan)

This study produced Cu-doped CrO2 thin films through reactive magnetron sputtering at deposition pressures from 3 to 7 mTorr. Following deposition, rapid thermal annealing (RTA) occurred at 600 °C for 5 minutes. The investigation encompassed structural, optical, and electrical analyses. X-ray diffraction (XRD) revealed distinctive CuCrO2 phase peaks at (006) and (012) orientations. Notably, the 3 mTorr-deposited film showcased exceptional attributes, including 76% transmittance in the visible range and 12.46 Ω-cm resistivity. These findings hold significance for advancing transparent UV photodetectors.

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Manuscript ID.  0898
Paper No.  2023-SUN-P0803-P017
Yu-En Chen Investigating the Influence of Oxygen Flow Rate on the Optoelectronic Characteristics of P-Type Cu-Doped CrO2 Thin Films
Yu-En Chen, Yun-Jui Yeh, Tsung-An Yang, Bhavya Kondapavuluri, Sindu Gnanan A. B., Sriranjani SIVASUBRAMANIAN, Balaji Gururajan, Wei-Sheng Liu, Yuan Ze University (Taiwan)

We deposited Cu-Doped CrO2 (CuCrO2) delafossite thin films on quartz substrates using reactive RF magnetron sputtering. Films were made from a copper-chromium metal alloy target with a 1:1 mass ratio, employing oxygen and argon as sputtering gases. X-ray diffraction (XRD) confirmed well-defined CuCrO2 crystal structures. Transmittance measurements revealed 65% transmittance in the 550 ~ 800 nm visible wavelength range. The films exhibited a minimum resistivity of 3.0 Ω-cm and a high carrier concentration of 3.0×1019 cm-3.

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Manuscript ID.  0973
Paper No.  2023-SUN-P0803-P018
Meng-Fu Chi Corrosion resistance of yttrium oxide (Y2O3) thin film and yttrium aluminum garnet (YAG) thin film
Meng-Fu Chi, Duy Thanh Cu, National Central University (Taiwan); Tsung-Feng Wu, Chun-Chih Liao, Guo-Yang Ciou, Chia-Te Lin, Feedback Technology (Taiwan); Chen-Cheng Kuo, National Central University (Taiwan)

In this study, Yttrium oxide (Y2O3) and yttrium aluminum garnet (YAG) were coated on B270 substrates using an ion-assisted electron gun (E-gun) evaporation system. Different coating parameters were investigated, including the use of ion sources. A microwave plasma etching machine was then used to etch the thin film coatings under different parameters, while fixing the microwave power and gas ratio. The white light interferometry was used to measure the etching thickness. The results showed that the corrosion resistance of YAG is better than Y2O3.

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Manuscript ID.  1018
Paper No.  2023-SUN-P0803-P019
CHENG XUAN Yang Design and fabrication of anti-reflection coatings for different plastic lenses with a low residual stress
CHENG XUAN Yang, Chun-Lin Tien, Ming-Jie Huang, Yi-Min Huang, Feng Chia University (Taiwan)

This work presents a four-layer anti-reflection coating (ARC) design using SiO2 and Ta2O5 materials with Essential Macleod software. The four-layer anti-reflection coatings were prepared by ion-beam assisted deposition and electron beam evaporation system. The proposed four-layer anti-reflection coating achieved a transmittance of 99% in the visible light range and exhibited a compressive residual stress of 33 MPa.

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Manuscript ID.  0515
Paper No.  2023-SUN-P0803-P020
En-Min Huang Investigation of Silicon Zinc Tin Oxide Thin-Film Transistors Fabricated by RF Sputtering
Hao-Wen Shih, Chia-Ying Li, En-Min Huang, National Cheng Kung University (Taiwan); Sheng-Po Chang, National Kaohsiung University of Science and Technology (Taiwan); Shoou-Jinn Chang, Jone-Fang Chen, National Cheng Kung University (Taiwan)

In this research, we prepared SZTO thin-film transistors using magnetron sputtering. By controlling the sputtering power of silicon oxide, we adjusted the number of free carriers and defects to modify the electrical characteristics of the thin-film transistors. The results showed that the sputtering power of silicon oxide had a significant influence on the drain current leakage, decreasing from 7.88×10^(-9) to 3.71×10^(-11), due to the suppression of the oxygen vacancies.

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Manuscript ID.  0909
Paper No.  2023-SUN-P0803-P021
Cheng-Chung Jaing Design and Implementation of Black Coating Using ITO-Free Electrochromic Film
Jen-Hao Wen, Minghsin University of Science and Technology (Taiwan); Chao-Te Lee, National Applied Research Laboratories (Taiwan); Yu-Wei Chen, Thi Cam Tien Truong, Cheng-Chung Jaing, Bing-Mau Chen, Yih-Shing Lee, Pang-Shiu Chen, Minghsin University of Science and Technology (Taiwan)

An ITO-free electrochromic bleached black coating was fabricated from a single W target at room temperature by a pulsed dc magnetron sputtering system. The black coating consisted of three pairs of double-layer films, and each pair included an electrochromic WO3 layer and an electrode W layer.

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Manuscript ID.  0742
Paper No.  2023-SUN-P0803-P022
CHENG ZI ZHENG Properties of Ga-N co-doped p-type ZnO transparent conducting thin films prepared by pulsed laser deposition
HAO CHENG HUNG, Chen Tai, K W Hung, CHENG ZI ZHENG, National Taipei University of Technology (Taiwan)

ZnO is an inorganic compound with good optical properties. It has high transmittance in the visible wavelength range and can be used for transparent conductive films. ZnO has a wide bandgap, making it suitable for various applications like thin film transistors and solar cells. Doping Ga content improved its conductivity. Achieving p-type ZnO is challenging due to its chemical structure, but Ga-N co-doping successfully produced a p-type transparent conductive film with high transmittance and excellent electrical properties: low resistivity, high mobility, and high carrier concentration.

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Manuscript ID.  1055
Paper No.  2023-SUN-P0803-P023
LIANG ZHANG Optical Design of Energy Conversion Layer for high Photoelectric Conversion Efficiency of an Organic Solar Cell
LIANG ZHANG, Woo Yong Kim, Chul Gyu Jhun, Hoseo University (Korea)

Organic solar cells (OSCs) are devices that converts solar energy into electricity,
and photoelectric conversion efficiency (PCE) is one of the important parameters to evaluate
the performance of OSCs. We propose a new idea for the optical structure design of OSCs in
order to improve its PCE

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Manuscript ID.  0234
Paper No.  2023-SUN-P0803-P024
Shao-Fu Wu Effect of Ag Doping on the Degradation Efficiency of Titanium Dioxide thin films for Methylene Blue
Yao-Te Wang, Shao-Fu Wu, National Taipei University of Technology (Taiwan)

In this experiment, we employed a cost-effective and easily-prepared method, known as the ultrasonic spray pyrolysis, to synthesize the TiO2 photocatalysis. The goal of this study was to investigate the influence of silver-doped titanium dioxide thin films on the degradation of methylene blue. The experimental results revealed that the degradation rate of methylene blue increased dramatically from 22% to 57% as Ag was doped

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Manuscript ID.  0518
Paper No.  2023-SUN-P0803-P025
Bo-Zhi Wang Investigation of MgSiO3 based Resistive Random-Access Memory
Fu-Yuan Jheng, Chih-Cheng Cheng, National Cheng Kung University (Taiwan); Sheng-Po Chang, National Kaohsiung University of Science and Technology (Taiwan); Bo-Zhi Wang, Shoou-Jinn Chang, Jone-Fang Chen, Wei-Chih Lai, National Cheng Kung University (Taiwan)

With the rapid development of semiconductors, it’s a new trend to make research on new materials and new structure memories as it becomes more difficult to shrink the device size. In the study, we fabricate a new generation memory, or Resistive Random Access Memory (RRAM), with MgSiO3 switching layer. This study investigates the impact of different film densities on MgSiO3 based RRAM devices. The results demonstrate that films with higher densities exhibit larger Forming voltage as well as a higher HRS/LRS ratio. These findings suggest a significant correlation between the mechanism of conductive filament formation and film density.

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