Session Index

TBA

  Preview abstract

In this study, we measured photovoltaic external quantum efficiency and electroluminescence external quantum efficiency of the devices to characterize the energy loss of open-circuit voltage in perovskite solar cells with different hole transport layers. The results show that the non-radiative recombination loss is the majority impact factor. Moreover, it is affected by the energy alignment between the hole transport layer and the perovskite layer. According to the results of photoluminescence and time-resolved photoluminescence, the non-radiative recombination contributes to the photoluminescence quenching effect in the interface between the hole transport layer and perovskite.

  Preview abstract

In the pursuit of commercialization, a feasible strategy involves refining the vapor deposition process for producing perovskite thin films and transport layers, offers numerous remarkable advantages including precise control of layer thickness, exceptional homogeneity of the resultant thin film, and the ability to select appropriate materials and compositions. In this work, we employed an all-vacuum deposition process for the fabrication of MHP solar cells. As a result, the devices achieved remarkable performance, including an open circuit voltage of 0.95V, a short circuit current density of 21.02 mA/cm2, a fill factor of 68.32%, and a PCE of 13.64%.

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In inverted structure perovskite solar cell, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) is considered the best choice for the hole transport layer (HTL), regardless of optical properties or electrical conductivity. However, its hydrophobic surface impedes the development of perovskite thin films. Here, discuss the modification of the PTAA surface, aimed at enhancing device efficiency. This involves addressing the issue of incomplete perovskite film coverage by adjusting the perovskite mixed solvent. Additionally, we utilize PFN-Br to modify the PTAA/Perovskite interface, effectively reducing perovskite defects and achieving the best device efficiency values of VOC=1.10 V, JSC=21.38 mA/cm², FF=77.95 %, and PCE=18.27 %.

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We successfully use polyethylenimine ethoxylated (PEIE) as a buffer layer to mitigate ion bombardment damage during the sputtering of transparent conductive oxide (TCO) in our process. We fabricated large-area bifacial devices, achieving PCE of 15.21 %, and produced a perovskite/silicon tandem solar cell, which reached PCE of 16.51%.

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In this study, researchers employed guanidine hydrochloride (GuHCl) for surface modification of Perovskite Solar Cell (PVK-SC) films. Theoretical simulations of the resulting PVSK:GuHCl exhibited a strong correlation with experimental data, indicating significant performance improvements in the devices. Theoretical analysis results indicate that passivating the surface states of the perovskite layer could improve the device’s performance. Initial tests on perovskite devices without a passivation layer displayed impressive attributes, including a high-power conversion efficiency of 16%. Therefore, there is a strong belief that passivating with PVK:GuHCl will lead to even higher photoconversion efficiency and enhanced stability in solar cell devices.


  Preview abstract

Here, we would like to integrate metamaterial absorbers to an indoor solar cell. The total absorption and absorption integral values for the integrated device and the ITO cell are 3.42/276 and 3.45/281, respectively. The difference in the two values is only 0.87% and 1.78%, respectively. With minimal differences in optical absorption, our proposed integrated device features a smaller measured sheet resistance 4.42/□, respectively and benefits from the higher flexibility and lower metal cost. Therefore, we believe our proposed metamaterial perfect absorber could be a promising candidate for transparent conductive electrodes in future indoor low-light photovoltaic cells.

  Preview abstract

Embedding single and double indium nanoparticles (In-NPs) sheets within a 52-nm
thick TiO2 anti-reflective layer, the conversion efficiency of InGaP/GaAs/Ge triple-junction
solar cells (3J-SCs) is significantly enhanced due to plasmonic effects. The distance between
In-NPs sheet and 3J-SC effecting on the conversion efficiency was also investigated.
Therefore, the cell with double In-NPs sheets, which with the distance of 10 nm and 42 nm
away from the surface of 3J-SC, obtained the lowest reflectance and highest EQE, as well as
resulting in a remarkable 33.22% increasing in conversion efficiency, due to the combination
of near-field and far-field plasmonic effects.

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Two-dimensional (2D) perovskites have been regarded as potential active materials for optoelectronic devices. Perovskite flakes at nanoscales in thickness have shown distinct optoelectronic properties, such as higher fraction of radiative recombination, in comparison to their bulk counterparts. However, nanoflakes of 2D perovskites are seldom demonstrated and investigated. In this research, we successfully fabricate PEA2PbI4 (2D) Ruddlesden-Popper (RP) perovskite nanoflakes of 11 nm by using a facile three-step method, and their optoelectronic and field-effect characteristics are studied.

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Advanced green energy technologies have attracted wide attention due to gas and oil depletion. It is vital to generate green hydrogen at large scales and convert it to electricity using a fuel cell. The electrocatalytic activities in hydrogen and oxygen evolution reactions using nanoscale Pt/C and IrO2 electrodes prepared by the spin-coating method improve the overall water splitting performance compared to the commercial electrode materials.

  Preview abstract

We have investigated how to utilize laser-fired contact (LFC) to eliminate the need for the high-temperature screen printing process currently employed for metallization of the passivated emitter and rear cell (PERC), which is the mainstream solar cell technology. Additionally, a comparison will be made between using graphene oxide (GO) and aluminum oxide (Al2O3) as rear passivation layers for PERC.

  Preview abstract

Energy is a serious global issue in today's world, and the world is trying to find ways to improve energy efficiency. Hydrogen can be considered one of the most efficient renewable energy sources. In this investigation, by using NiS as the oxygen evolution reaction catalyst and doping Mo ions in the Bi2S3/ZnO photoanode and modifying the composition of the electrolyte, the efficiency of photoelectrochemical hydrogen production was improved. In addition, this new photoanode can achieve low onset potential and high photocurrent, thereby comprehensively improving hydrogen generation efficiency and reducing energy waste.

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In this study, we deposited SnO as a channel layer by two different sputtering methods and optimized the SnO film by adjusting different post deposition annealing temperatures. With RF sputtering annealing at 250℃ SnO TFT exhibited p-type electrical characteristics of high mobility of 0.58 cm2/V∙s and on off current ratio (ION/IOFF) of 2.89×102 . To sum up, SnO TFT is very promising for applying to flat panel display technology.

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This study used gold-coated aluminum foil as a substrate for surface-enhanced Raman scattering (SERS) to study the Raman spectra of an environmentally friendly explosive compound, Dinitrobenzofuroxan (DNBF), at concentrations ranging from 10-4 M to 10-8 M. Results showed no significant peaks in the Raman spectra at 10-7 M concentration, suggesting noticeable enhancement effects of the substrate on DNBF only up to 10-6 M.
Furthermore, SEM, XRD, and XPS were employed to confirm substrate composition and morphology, aiding data analysis.



  Preview abstract

By implementing Intense Xenon Treatment for the optimization of the Electron Transport Layer (ETL), remarkable advancements were made in enhancing performance, leading to an exceptional power conversion efficiency (PCE) of 13.12% in organic solar cells (OSCs).

  Preview abstract

CuO thin films for photoelectrochemical water splitting are fabricated using the sol-gel spin coating method. The thickness of CuO thin films is precisely controlled by depositing different layers. Thickness-dependent optical properties are investigated to optimize the photoconversion efficiencies of photoelectrochemical water splitting using CuO thin films.

  Preview abstract

Different Si thin films were deposited through different deposition processes. The
study aimed to explore the effects of experimental parameters and the etching depth of the target
material on the characteristics of film thickness distribution, to understand the optical properties
of the silicon thin films.

  Preview abstract

Direct-current magnetron sputtering and plasma-assisted reactive magnetron sputtering under low temperatures have deposited ITO thin films. ITO thin films' better electrical and optical properties were investigated under different growth conditions. In this study, A comparison with ITO films by both technology under low temperatures was analyzed by UV-VIS-NIR spectrometer, four-point probe, hall effect measurement, and X-ray diffractometer.

  Preview abstract

We present a novel laser coloring approach for stainless steel (SUS304) by employing non-overlapping subpixels within a single pixel to achieve color mixing. In contrast to previous methods that relied on adjusting laser parameters to produce color variations, our method enables the generation of intermediate colors between selected hues. The results demonstrate a two-color gradient transition in the color bar, offering a new artistic choice for laser coloring.

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This study aims to understand the electronic properties of the NiCrFeVCuTi high-entropy materials and demonstrate its correlations between semiconductor properties in corrosive environment. The surface chemistry was examined via X-ray photoelectron spectroscopy (XPS) and hard X-ray photoelectron spectroscopy (HAXPES). The XPS system equipped with Ultraviolet photoemission spectroscopy (UPS) and Low-energy inverse photoelectron spectroscopy (LEIPS) was used to investigate the electronic structure of the materials along with different corrosion durations. The results provide insights to monitor the chemical and electronic properties of high entropy oxide thin films, which provides a pathway for investigating materials property of semiconductor electronics in the future.

  Preview abstract

We numerically investigate the optical gain spectrum of the bulk and tri-layer of molybdenum disulfide functioned as an optical amplifier. In room temperature, the bulk has a minimum interaction photon energy at the band gap (1.23 eV) with a threshold injected current density ~3 kA/cm2. For the 2D tri-layer film, the minimum interaction photon energy is lifted to 2.09 eV due to the quantum-well structure, and the threshold injected current density is ~1.9 kA/cm2 which is significantly lower than that in bulk. The dependence of the optical gain profiles on the temperature and injected current density are also investigated.

  Preview abstract

The Polymer dispersed liquid crystals (PDLC), in which liquid crystal droplets are
dispersed in a polymer matrix, have opaque state or transparent state. Without external electric
field, the refractive index of liquid crystal droplets do not match that of the polymer matrix, so
that so that the light is strongly scattered when it passes through the PDLC film. By tuning the
liquid crystal properties, we have made a film that reflects Infrared and transmits visible light.

  Preview abstract

In this study, the spin-coating method has been used to prepare TiO2 compact layer with different thicknesses. Afterward, different weight percentages of silver nanoparticle solution were added to TiO2 doctor blade colloid. Ag-TiO2 films were prepared by using doctor blade method for Dye-sensitized solar cells (DSSCs). With the reduced electron recombination at the interface between electrolyte and FTO, and with the enhancement of localized surface plasmon resonance (LSPR) effect, the photovoltaic properties is improved, where an optimal photoelectric conversion efficiency (PCE) of 5.96 % is achieved.

  Preview abstract

In this study, the deformation titanium dioxide aggregated scattering layer (DTA) is first prepared using a blade-coating method to enhance the light utilization and dye adsorption capabilities of the photoanode. The silver nanoparticles are added into the absorbing layer, and then are prepared using spray coating method. Due to the localized surface plasmon resonance (LSPR) effect caused by the Ag-TiO2 photoanode this has led to an increase in the photovoltaic conversion efficiency (PCE) from 3.91% to 4.5%. It should be noted that the incorporation of a bilayer structure with a scattering layer has further improved the PCE to 5.1%.

  Preview abstract

Nickel Cobalt Sulfide ternary compound (NiCo2S4) compound is a versatile semiconductor with strong electrochemical abilities in applications like dye-sensitized solar cells (DSSCs) and supercapacitors (SCs). Our study employs NiCo2S4 as a DSSCs cathode and SCs anode, creating photorechargeable supercapacitors (PS). Two DSSCs in series achieve high charge potential, using platinum and NiCo2S4 counter electrodes. For the SCs, NiCo2S4 acts as the positive electrode alongside bismuth's negative electrode, forming an asymmetric supercapacitor (ASCs). Successfully combining DSSCs and ASCs demonstrates a high-performance PS device.

  Preview abstract

In photoelectrochemical reactions, the performance of n-GaN nanopillar photoelectrodes declines due to photocorrosion. This study explores enhancing stability during PEC reactions. Photoelectrodes of n-GaN with a Ni(OH)2 capping layer showed more durability than Ni(OH)2-free ones. In particular, the effect of a NiO seed layer on Ni(OH)2 nanosheet coverage on n-GaN was evaluated. Enhanced stability is mainly attributed to the Ni(OH)2 coating, passivating defects in n-GaN and facilitating carrier transport to the electrolyte, suppressing photocorrosions.

  Preview abstract

This study presents a hybrid non-enzymatic glucose sensor based on localized surface plasmon resonance (LSPR) of gold nanoparticles (Au NPs) modified copper oxide/zinc oxide nanorod array (Cu2O/ZnO NRA). An aluminum film was first grown into an array of pores through an anodization process, and it was followed by electrodeposition of ZnO nanorods within the arrayed pores. Subsequently, Cu2O was electrochemically deposited on the ZnO NRA. Au NPs were chemically synthesized and dispersed on the Cu2O/ZnO NRA surface using Nafion as an ion exchange resin. The sensor exhibited a linear range of 7.41-11.111 mM and a sensitivity of 315.67 μAmM-1cm-2.

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In this work, tungsten-doped vanadium oxide (VO2) films were deposited by electron beam evaporation associated with ion beam-assisted deposition.The optical and mechanical properties of these VO2 films at different tungsten doping concentrations were investigated. The results show that the visible light transmittance and residual stress of vanadium oxide films decrease with the increase of doping tungsten concentration. When the VO2 sample with a doping concentration of 5% is heated above 55 °C, the transmittance drops sharply, which may be due to the phase transition to a metal phase, and the phase transition temperature is estimated to be 55 °C.

  Preview abstract

The aluminum gallium oxide (AlxGa2−xO3) RRAM device is investigated in this report. The AlxGa2−xO3 layer is synthesized by thermal oxidation of the AlGaN epitaxy, and the AlxGa2−xO3 layer is treated by oxygen (O2) plasma. The endurance of AlxGa2−xO3 RRAM device is significantly improved by O2 plasma treatment. Besides, the retention time of AlxGa2−xO3 RRAM device with O2 plasma treatment for 90 min has persisted for 104 s. The fabricated AlxGa2−xO3 RRAM device presents potential for data storage.

  Preview abstract

This report investigates the potential of laser ionization programming (hereafter LIP) to enhance the programming capability of a non-volatile memory (NVM) capacitor with lightly doped substrate, specifically a silicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS) type. Laser-generated charges in the substrate of a SONOS-type NVM capacitor with lightly doped substrate (hereafter LDSONOSC) make them more easily programmable under laser ionization. The focus is on the performance of UV LIP on an LDSONOSC, which utilizes a UV transparent conductive gate and UV transparent nanocrystalline high-k gate dielectric, enabling the UV-LIP-LDSONOSC to store more data in a smaller space, ultimately enhancing their efficiency.

  Preview abstract

This study focused on the influence of different annealing temperature of ZTO TFTs. Annealing can help reduce oxygen vacancies and cause the rearrangement of atoms. We found that the higher annealing temperature lead to better electrical properties. The threshold voltage shift to positive region and the on current of TFTs increase significantly. It also improved the subthreshold swing by reducing the interface traps. We successfully made annealing ZTO TFTs and their electrical properties have been discussed in this study.

  Preview abstract

The transparent conducting N, Ag co-doped ZnO thin films were fabricated using the sol-gel spin-coating technique. This work explored the influence of Ag concentration, annealing temperature and time on the physical characteristics of ZnO thin films. The resulting ZnO films demonstrated p-type conductivity, boasting a remarkably low resistivity of 5.88 Ω·cm, coupled with an impressive average visible transmittance exceeding 89%. These engineered p-type ZnO thin films exhibit great potential for applications in optoelectronic devices.

  Preview abstract

We train four machine learning (ML) models using chemical structures of the active materials based on donor-acceptor binary blend films for predicting the efficiency of organic photomultiplication (PM) type photodetectors. The results of the four ML models all exhibit high accuracies, suggesting the ML models are very promising for evaluating the organic molecules for PM-type organic photodetectors.

  Preview abstract

This study investigates the photoelectrochemical (PEC) behavior of porous silicon (PSi) and its nickel (Ni)-coated hybrid system. Ni-coating significantly enhances PEC performance, attributed to catalytic activity, improved light absorption, and altered carrier transport. Scanning electron microscopy (SEM) analysis reveals distinct structures on PSi surfaces before and after Ni-coating, correlating with enhanced PEC performance due to intensified carrier mobility. Varying Ni coating times show optimal PEC at 15 minutes, potentially due to suitable structures enhancing electron-hole pairs separation.

  Preview abstract

MAPbBr3 single crystal material was grown by inverse temperature growth method, and then MAPbBr3 perovskite quantum dots (QD-MAPbBr3) were synthesized by ligand-assisted precipitation method. The QD-MAPbBr3 was doped with anti-solvent and injected into the organic-inorganic perovskite active layer to improve the efficiency of solar cells.

  Preview abstract

TBA

  Preview abstract

In this study we focus on enhancing the conversion efficiency of GaAs solar cells by adding green and red quantum dot. Quantum dots are nanomaterials with unique bandgap structures capable of generating additional charge carriers upon absorbing solar photons, thereby improving the efficiency of the photoelectric conversion process, and the addition of quantum dots can potentially increase the photoelectric conversion efficiency of GaAs solar cells.


  Preview abstract

Ultraviolet C AlGaN-based light-emitting diodes and PIN-type photodetectors (PD) with an embedded porous AlGaN layer were demonstrated. The n-type Al0.6GaN:Si layer with high Al content was transformed into the conductive porous AlGaN:Si layer through the electrochemical (EC) wet etching process. The relative reflectivity of the treated structure was higher than the non-treated structure. High electroluminescence emission intensity, peak wavelength redshifted from 272.8 to 273.4 nm, and low interference oscillation were observed by forming the porous AlGaN layer. For the PD structures, the peak responsivity was measured at about 255 nm.

  Preview abstract

This study simulated different peak wavelength positions and peak reflectance values of anti-reflective coating. The distribution of chromaticity coordinates was analyzed when there were random errors in film thickness. The objective was to identify the optimal design methodology for an antireflective coating that minimizes chromatic deviation.

  Preview abstract

We propose deep learning models for accurately predicting Lab color values in laser-induced thin film coloration, utilizing both simulated and real-world machining parameters. The models demonstrated impressive performance, achieving ΔE values of 0.77 and 3.55 for simulated and real-world datasets, respectively. The results indicate promising potential for deep learning in enhancing efficiency and precision in predicting laser-induced coloring.

  Preview abstract

This work introduces a 7T1C AMOLED pixel circuit designed to address the issues of VTH variations and leakage current. HSPICE simulation results demonstrate that the relative current error rates are less than 2%. Additionally, the offsets of driving current are only 0.68 nA, 0.52 nA, and 0.54 nA for high, medium, and low gray levels, respectively.

  Preview abstract

This study displays the optical properties of thin-film metallic glasses (TFMGs) in the thermal infrared (IR) region. Applying optical thin film theory, we could modulate the emissivity of TFMG in the thermal IR region. The measured emissivity of the TFMG (45.35%) was significantly enhanced when compared with that of a Si substrate or metal film. Our findings reveal that metallic glass films can display thermal radiative properties superior to those of metals and semiconductors, making them promising materials for use in electronic devices with heat dissipation properties.

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This study focuses on enhancing HEMT high-frequency performance through gate length scaling. However, as gate lengths decrease, the short channel effect and buffer leakage become significant challenges. The design of back-barrier effectively suppresses buffer leakage, lowers subthreshold swing (SS), and enhances the device’s fT. Thicker back barriers demonstrate better results, with the 50nm back barrier achieving an fT of 179 GHz, which is higher than the 30nm back barrier with fT of 174 GHz. However, excessively thick barriers may create a secondary channel. These findings offer valuable insights for optimizing GaN HEMT characteristics.

  Preview abstract

Atomic layer deposition (ALD) has been used extensively for depositing thin films in the semiconductor and
optoelectronic industries. The self-limiting character of ALD allows accurate thickness control and superior
coating conformality over a complex structure. With the assistance of nanostructured templates, hollow
nanostructures, such as nanotubes, can be fabricated by using ALD. It is promising to manufacture various
nanostructures for optoelectronic applications by using ALD and templates. We have successfully fabricated
ZnO, VO2, and TiO2 nanostructures for the optoelectronic applications, such as photocatalysis,
photoelectronchemical water splitting, and thermochromism. Multiwalled, multilayered or alloyed nanotubes
with superior optoelectronic properties fabricated by using nanolamination ALD processes will be also presented
in this talk. On the other hand, metallic nanoparticles (NPs), such as Pt and Ni, can be prepared by using ALD
due to insufficient nucleation sites on the substrate. The size of NPs can be easily controlled by changing the
cycle number of ALD, allowing the adjustment of optical properties.

  Preview abstract

Transition metal dichalcogenide (TMD) material is an excellent candidate for avoiding short-channel effects. One study shows the few-layer MoS2 nanosheet transistors have better performance than the monolayer one [1]. Therefore, we investigate the transport properties of bilayer MoS2 and bilayer WSe2 and utilize them as channels in our double-gate MOSFET design. Our result shows that bilayer MoS2 devices and bilayer WSe2 p-type devices have a nice channel control ability. The sub-threshold swing values are 65~60 mV/dec with a gate length longer than 7 nm. Among these two materials, the bilayer MoS2-based device shows more promising characteristics

  Preview abstract

To achieve a higher fT of an HBT device, maximizing the device's gm (ΔIC/ΔVBE) and minimizing the device's equivalent capacitance play crucial roles. This work introduces a quaternary material (InGaAlAs) chirped-SL (Chirped Superlattice) structure into the Base-Collector grade. This allows for diminishing the conduction band's discontinuity and gradually increasing the effective bandgap from the base to the collector of the B-C junction without changing the thickness of the barrier layer. Quaternary superlattice structures exhibit lower equivalent capacitance than ternary superlattices and achieve higher IC (collector current) than quaternary gradient layers.

  Preview abstract

We deposited high-quality GaN thin films on glass substrates using RF reactive magnetron sputtering with high-purity gallium (8N). The process was optimized to enhance crystal quality, aided by an AlN buffer layer to improve the crystal quality of GaN films. X-ray diffraction confirmed the (002) crystal phase with a narrow FWHM of 0.85°. Low-temperature photoluminescence exhibited a band-edge emission at 3.36 eV (369 nm). X-ray photoelectron spectroscopy revealed strong Ga-N bonding. RF magnetron sputtering proved effective for depositing GaN films on glass, offering potential for optoelectronic applications.

  Preview abstract

The research proposal is to heterogeneous growth carbide (SiC) films on silicon (Si) substrates using reactive radio frequency (RF) magnetron sputtering. The substrates are heated to 600℃ to achieve epitaxial growth of SiC films. In order to avoid target damage from heat accumulation, we utilize reactive RF sputtering technique with Si targets and methane (CH4) gas. The bonding properties of SiC films under different RF power levels were analyzed using Raman spectroscopy. The experimental results demonstrate that the RF power of 150W represents the critical point for Si-C bonds and get 4H-SiC crystal after 1200 annealing.

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This study explores the under-investigated terahertz properties of ultrathin metallic films, specifically electron emission. We observe this emission in ultrathin gold films, driven by a strong THz field. Films of around 2 nm thickness show efficient absorption and significant electron emission. Our analysis, employing Time-of-Flight (TOF) measurements and electron energy distribution fitting, indicates that electron emission is a result of the interaction between hot electrons and the THz electric field.

  Preview abstract

MXene, a new class of 2D materials, is being grad-ually used in energy storage, sensor, catalyst, super-capacitor, and other fields. We also anticipate that MXene can be an enabler in organic-based transistors. Here, we attempt to incorporate titanium carbide Ti3C2Tx MXene into a polythiophene semiconducting layer, in the hope of boosting charge carrier transport. Primary results show a 4-fold enhancement in mobility when 1.0 wt% of MXene is blended. The hybrid tran-sistor also reveals a prolonged air stability with re-spect to pristine polythiophene device.

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We have fabricated bifacial perovskite solar cells with 10 nm Au/MoS2 and ITO transparent electrodes (TEs) on glass substrates. Compared with the reference device with 100 nm Ag and ITO electrodes, similar PCE values ~ 12 % are observed for the two devices when solar light is irradiated from ITO side. When the solar light illuminates from metal side, only the device with the 10 nm Au/MoS2 TE exhibits similar short-circuit current and PCE value ~ 11.4 %, which have demonstrated the potential of 2D material-assisted nanometer-thick Au films for TE applications in bifacial and tandem solar cells.

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We examine how thin-film interfacial absorption layers form between Nb2O5 and SiO2. The main aim of this research is to understand the optical properties of the interface, which are crucial for optoelectronic applications. Moreover, we use various target materials to apply anti-reflective coatings and discuss the outcomes obtained from spectroscopy. Overall, this investigation enhances our comprehension of the relationship at the Nb2O5/SiO2 interface.

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GaN layers were directly epitaxial grown at 600°C using the high power impulse magnetron sputtering technique, in contrast to the MOCVD method that demands temperatures exceeding 1000°C. In this epitaxial process utilizing N2/Ar mixture gas and Ga target, the GaN layers were directly grown on Si (111) substrates and Si (111) substrates with AlN buffer layers. XRD measurements of full-width at half-maximum (FWHM) reveal that the GaN layer with the AlN buffer layer exhibits significantly lower FWHM and stronger intensity. SEM results indicate that the GaN layer deposited on the AlN buffer layer displays a relatively smooth surface.

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In this work, the optical response and in-plane surface plasmon polariton of a grating prepared by oblique angle deposition of silver is proposed. Based on the P-polarized reflection peak at certain wavelengths. The surface plasmon polariton propagation on the surface of silver coated grating is investigated here. By analyzing the radiation on the surface from a dipole above the surface with FDTD method, the in-plane iso-frequency curves are derived and reveal the anisotropic properties of the grating surface. The results show that the grating surface exhibits anisotropic behavior due to the oblique angle deposition.

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We report a custom-built frequency domain fluorescence lifetime instrument, which enables fluorescence lifetime measurement of fluorophore species at various modulation frequencies (200kHz-30MHz). Fluorescence excitation is carried out by light-emitting diodes (LEDs), and frequency output of the excitation light source and photomultiplier tube (PMT) is directly controlled by programmable logic gate array (FPGA). With this system, we measured and analyzed fluorescence lifetimes of CsPbBr3 at different concentrations.

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In this research, we have effectively fabricated gallium nitride (GaN) films on sapphire and 6H-silicon carbide (6H-SiC) substrates through the utilization of high power impulse magnetron sputtering at a low epitaxial temperature. High-power pulsed magnetron sputtering stands as an exceptional surface treatment method, providing benefits including rapid deposition, high uniformity, robust adhesion, and accurate thickness management. Furthermore, its deposition rate exceeds that of the conventional radio-frequency sputtering technique.

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This study investigates different indium-tin-oxide thicknesses for designing defrosting anti-reflective coating. The films were prepared by plasma-assisted reactive magnetron sputtering. The heating characteristics indicated that 1mm of ice on the antireflective coating with an indium-tin-oxide layer (physical thickness of about 250 nm) was wholly removed after 60 seconds when the applied voltage was 12 V.

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Nanoscale metal oxide materials have been extensively studied due to their unique dimension-dependent physical and chemical properties. The sol-gel thin film approach using spin coating is utilized to prepare Ni-doped copper oxide photodetector materials.

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The figure of merit (FOM) of semitransparent solar cells is limited by either high transmittance and low efficiency or low transmittance and high efficiency. The dual absorption layer structure of a-Si:H/a-SiOx:H solar cells combines the energy gap difference (EgL/EgH) and the thickness ratio (DL/DH) to regulate the transmittance and efficiency,aiming to find the optimal FOM. Furthermore,to enhance the light transmission through the n-layer, CO2 gas is introduced to create a high bandgap thin film. The dual absorption layer structure cell with (EgL/EgH=1.704 eV/1.946 eV,DL/DH=50 nm/50 nm) achieves efficiency, average transmittance (400-650 nm), and optimal FOM of 3.09%, 37.92%, and 99.

  Preview abstract

Light-emitting diodes (LEDs) are widely used today in fields such as lighting and displays [1]. Among them,perovskite LED with dimmable performance has become a research hotspot [2,3], and the demand for backlight sources of LCD screens has also increased, which has higher requirements for phosphor materials. It is difficult to achieve the ideal color rendering effect when using traditional phosphors with blue chips, but tetravalent manganese red phosphors solve this problem [4,5]. However, tetravalent manganese phosphors contain fluorine,which may cause the risk of pollution in the production line, limiting its large-scale application.

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This study investigates the fabrication of cesium iodide optical films. By controlling variations in substrate temperature during the fabrication process, the study utilizes X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), and X-ray Luminescence Spectroscopy (XL) to measure and analyze the thin film. Additionally, X-ray irradiation of the film is used for imaging purposes. The results reveal that the best crystalline structure and luminescent performance are achieved when preparing the CsI at a substrate temperature of 200°C.

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This study explores the potential of using composite carbon black (N134) as a substitute for platinum in dye-sensitized solar cells. Through optimization and refinement experiments at different concentrations (3M, 4M, 5M) and spinning speeds (2000-4000 rpm), we achieved a superior performance of the composite carbon black counter electrode in dye-sensitized solar cells, with a maximum efficiency of 6.55% and fill factor of 57.34%. These results suggest composite carbon black as a promising, cost-effective alternative to platinum, providing valuable insights for dye-sensitized solar cell technology

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In this study, we fabricated co-sputtered indium gallium oxide ultraviolet photodetectors. The power of the gallium oxide target was fixed at 80W, while the power of the indium oxide target was varied at 20W, 30W, 40W. Device with 30W/80W has the biggest sensitivity of 5.20x10^3, and the device with 40W/80W has the biggest responsivity of 1.72x10^2 A/W. Response/Recovery time increase as the indium doping increased, and then decrease while excessive indium doping.

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Utilizing pulsed magnetron sputtering, high-quality IGZO films were deposited by adjusting the oxygen flow rate and the duration of UV light irradiation on the substrates. This adjustment resulted in films with elevated carrier concentration and minimal surface roughness. Subsequently, this superior films were utilized in the fabrication of thin film transistors. Notably, the channel layer was innovatively designed with a double-layer structure, thereby further enhancing the carrier mobility and On/Off ratio of the device.

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Investigated alumina passivation films on silicon solar cells using atmospheric pressure atomic layer deposition. Enhanced passivation achieved through post-annealing process, compared traditional tube annealing furnace and microwave annealing.
Photoluminescence (PL) imaging and effective minority carrier lifetime (τeff) evaluated passivation. At 400°C annealing, significant lifetime improvement observed. Microwave annealing correlated photoluminescence and minority carrier lifetime trends. Imaging assessed localized passivation quality. Optimal interface state found at 1.5-2.5 nm intermediate layer thickness.

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The Ag3PO4-Na2SiO3 film was prepared by spray pyrolysis at 100oC on glass substrate. The film surface morphology and compositions were examined. The non-uniformed distribution of Ag3PO4-Na2SiO3 with Na2SiO3 gathering was characterized. With repeated operation by the degradation of rhodamine B (RhB) aqueous under visible light illumination, the reduction of photocatalytic ability was observed. With film morphology and crystalline analysis for the pristine and post operated sample, the mechanism for reduced photocatalytic ability of the film was discussed and realized.

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The reflectance of the Extreme Ultraviolet (EUV) multilayer mirror is an important parameter that determines the production capacity in the EUV lithography technology. The reflectance of the EUV multilayer mirror is always lower than the theoretical value due to the Mo and Si materials maxing and diffusing with each other. Thus, in this study, ion beam sputter deposition system was used to fabricate Mo/Si multilayers and B4C layer was added to reduce the thickness of interface diffusion. The Mo-on-Si interface and Si-on-Mo interface diffusion thickness decreased from 0.7nm and 0.46nm to 0.43nm, respectively, after the B4C layer was added.

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Quasi-two-dimensional perovskite single crystals are grown through vapor-venting space-limited crystallization method and used for fabricating solar cell devices. In order to accelerate the crystal growth rate, we add primary alcohols to the perovskite precursor solution to modify their solubilities. As a result, the crystal grown time is reduced to 5 h and a high power conversion efficiency of ca. 16% is achieved. We anticipate that the rapid crystal growth method will benefit the future mass production of single-crystal perovskite solar cells.

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The purpose of this study is to fabricate the tungsten trioxide (WO3) nanorods (NRs) films by hydrothermal process and investigate the relationship between microstructure morphologies and electrochromic properties. It was found the optimal process parameters were the Na2WO4 concentration of 0.25M, the pH of 2.2, the capping agent of 0.0075mol, the growth temperature of 180oC and the growth time of 2 hr. It revealed the optimal process parameters samples possessed best electrochromic properties is due to having high specific surface area and porous structure which resulted in more easily react with lithium ion (Li+) in the electrolyte.

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In this study, a couple of WO3/DSSC tandem photoanode and Cu2O/ZnO photo-cathode irradiated with simulated sunlight for photo-electrochemical (PEC) hydrogen generation application was demonstrated. WO3 nanorods (NRs) was connected to the Pt-counter electrode of a dye-sensitized solar cell (DSSC), and dye-sensitized TiO2 of the DSSC was wired to the hetero-nanostructure composed of P-type Cu2O nanowires (NWs) and N-type ZnO nanoparticles (NPs). Experimental results revealed that the solar to hydrogen conversion efficiencies of Cu2O and Cu2O/ZnO-10s (ZnO NPs deposited for 10s) were about 3.51% and 5.63%, respectively. This system could be considered to perform artificial photosynthesis application in our future research.

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In-organic precursor (titanium tetraisopropoxide, TTIP) was used to form TiO2 films, and the effects of the deposition times on the characteristic and microstructure had been investigated. Moreover, the atmospheric pressure (AP) plasma system was used to study the core deposition technology of high specific surface area and well-aligned TiO2 nano-dendrites (TNDs) films served as photo-anode for the DSSCs applications. Up to date, the optimal TNDs films with an extra high deposition rate of ~1m/min revealed the best photo-conversion efficiency of 12.08% for adopting N719 dye and iodine ion electrolyte, under illumination of simulated AM1.5 solar light (100 mWcm−2).

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Hydrogenated amorphous silicon thin films possess a tunable bandgap. By adjusting the bandgap, these thin films can selectively absorb light of different wavelengths. Annealing can adjust the bandgap of hydrogenated amorphous silicon thin films. As the annealing temperature increases, the Si-H bonds, Si-H2 bonds, and Si-H2 ratio decrease, leading to a smaller bandgap of the film. As the bandgap decreases, the optical properties of the film increase, and the absorption wavelength shifts towards longer wavelengths.

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In this work, Ge was doped into Cu2ZnSnS4 (CZTS) absorber to replace Sn, and after Ge doped into absorber layer, it can boost the grain size. And the Cu2ZnSn1-xGexS4 (CZTGS) sample has larger band gap (1.32 eV) than the CZTS sample (1.28 eV). In this work, all the precursors were used thermal evaporation to fabricate, and Ge was doped on the top of precursors. After the sulfurization, CZTS and CZTGS were formed respectively. All the samples were used thermal field emission scanning electron microscope (FE-SEM) and UV-VIS-NIR to investigate the structure and optical properties.

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In this work, we report a lead-free MASnI3 perovskite photodetectors prepared by inverse temperature crystallization method. The MASnI3 perovskite photodetectors in this experiment has the highest photocurrent value in green region among the five monochromatic lights with a photocurrent of 2 μA. The manufacturing process is relatively simple, so it can be easily manufactured.

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In this research, silicon nitride and silicon oxynitride films are prepared by a combined high-power impulse and closed field unbalanced magnetron sputtering (HIPIMS/CFUBMS) deposition technique. A multilayer AR coating with AF films is deposited on one side sapphire. Its average transmittance is 90.6 % and its Mohs hardness is larger to 8.The color coordinate ΔC is 2.7 and the contras ratio increased from 1.7 to 2.7.

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We reported a cost-effective method for fabricating a self-assemble micro-lens array film (MAF) of SiO2 particles to enhance the efficiency and angular spectral stability of organic light emitting diodes (OLEDs). The film is fabricated through spin-coating technique,resulting in a high filling factor of 92.99%. The SiO2 MAF exhibits exceptional optical properties, with an impressive average transmittance of 94.9% and a haze of 93.98% in the ultraviolet-visible range. Compared to reference OLEDs, OLED with MAF demonstrated an increase in luminescence in angular measurement, reaching an enhancement of 25.6%.Furthermore, both the current and power efficiencies were enhanced by 17%.


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In this research, leveraging the attributes of germanium/germanium oxide thin films, pulsed magnetron sputtering apparatus was employed to generate high and low refractive index thin films, characterized by commendable properties across diverse gas parameters. Following the input of these parameters into Macleod thin-film software for computation, we designed multi-layered film arrangements targeting center wavelengths of 1550nm and 1350nm. This approach facilitated the creation of filters featuring center wavelength transmittance exceeding 80%, while concurrently minimizing coating time via the application of low-thickness filters.

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In this work, the influence of different deposition powers and annealing temperatures on the optical and electrical properties of indium zinc oxide (IZO) films was studied. Experimental results showed that, IZO films deposited with a power of 125W and annealing at 300°C exhibited the best electrical and optical properties, with the lowest resistivity of 1.43×10-3 Ω·cm, the highest carrier mobility of 11.12 cm2/V-s, and a carrier concentration of 4.61 ×1020 cm-3. The average transmittance in the wavelength range of 400 to 800 nm was 82.57%, and the optical energy gap was determined to be 3.372 eV

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Recent research has made 2D materials cladding a key player in enhancing nanowire performance by reducing electromigration (EM) and surface roughness scattering (SRS). Using the DFT method, this study explored Cu, Al, and Co metals with graphene, h-BN, and MoS2 interface. Projected band structure and electrostatic potential result indicate Cu and Al primarily exhibit physical adsorption, and Co mainly forms chemical adsorption. The Co-graphene system demonstrated superior SRS suppression, and the anchor effect serves additional EM resistance, offering wire performance enhancements.

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This report discusses the growth mechanism due to the unique properties of multilayer 2D materials combining organic and semiconductor materials. Controlling the time of sputtering Mo, MoS2 with different layers can be grown from monolayer up to above 15 layers. Then, by identifying HRTEM, it can be found that when MoS2 reaches more than 15 layers, there are some clusters in the layered structure, so the stacking layered MoS2 becomes messy. Therefore, we chose 10 layers MoS2 to fabricate 2D solar cells and found that its spectral response has an obvious cut-off at near 700 nm under zero bias.

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This research investigates the prospective performance of SiC/SiO2 as front transparent passivated contacts in industrial bifacial passivated contacts solar cells using Sentaurus TCAD for optical raytracing and Quokka2 for electrical simulations. Our simulations suggest an estimated efficiency improvement of approximately 2.4% for front SiC/SiO2 passivated contacts as compared to poly-Si/SiO2 front contacts. The simulations further indicate the possibility of achieving a remarkable performance of approximately 25% through industrial-compatible processes with the proposed bifacial passivated contacts structure.

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Antireflection coating produced using the electron gun evaporation undergoes reflectance spectra changes over time, resulting in variations in the reflectance spectra converted to CIE xy. Through analysis using the Essential Macleod Software, the reasons for these changes were identified, and a new method was proposed to stabilize the reflectance spectra and chromaticity coordinate.

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In this study, we investigate the electrical properties and surface chemistry of MgNiCoZnCu high-entropy oxides (HEOs), which is used as anode material in lithium-ion batteries (LIBs). The composition and chemical state of the material was examined by X-ray Photoelectron Spectroscopy (XPS). Ultraviolet Photoelectron Spectroscopy (UPS) and Low Energy Inverse Photoelectron Spectroscopy (LEIPS) are used to investigate the band structure information. The quantification and bandgap variations of HEOs are crucial for discovering electrochemical properties and battery performance during the operation. Our goal is to reveal the formation of irreversible capacitances of HEOs materials and the HEOs electrode working mechanisms in LIBs.

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The electron transport layer (ETL) is a critical part affecting the electron extraction of perovskite solar cells (PSCs). In this study, vertically oriented graphene nanoflakes (GNF) were synthesized by Plasma Enhanced Chemical Vapor Deposition (PECVD) system and successfully introduced into the ETL (PC61BM) of inverted perovskite solar cells. The best power conversion efficiency of PC61BM:GNF device achieved 15.34%, which is much higher than 13.06% of the one without GNF. Furthermore, all photovoltaic characteristics were improved such as Voc from 1.019 V to 1.07 V, Jsc from 18.745 mA/cm2 to 19.489 mA/cm2, and FF from 68.39% to 73.8% after GNF incorporation.

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The sp2-bonded boron nitride film demonstrates remarkable thermal conductivity and insulating characteristics. In this research, sp2-bonded BN thin films were grown on the Si(111) substrate utilizing two distinct precursor injection approaches. High-resolution scanning transmission electron microscopy was employed to measure and analyze the sp2-bonded boron nitride films under varying precursor injection methods.

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We demonstrate the advantage of using NiO as the interlayer with CuAlO2 to form a CuAlO2/NiO/CuAlO2 composite structure deposited using RF magnetron sputtering. Only P-type layers were used for the fabrication as there is a need to enhance the electrical and optical properties of P-type TCOs. Structural, optical, morphological, and electrical properties were studied for the composite structure.

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The influence of the electric field in hybrid halide perovskite materials plays a crucial role in comprehending intriguing optoelectronic phenomena. Here, we report the electroabsorption (E-A) spectra, that is, electric field-induced change in absorption spectra, of methylammonium lead tri-iodide (MAPbI3) film sandwiched between fluorine-doped tin oxide (FTO) and poly(methyl methacrylate) (PMMA) film in both tetragonal and orthorhombic phases. The observed E-A spectra demonstrate the sensitivity to the light illumination power density (IL-D) at a low modulation frequency (M-F) of the applied electric field (Fa). However, this dependence of E-A spectra on IL-D diminished when the M-F was high.

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The research is to prepare silver nanowires (Ag NWs) grown by polyol synthesis with magnet oscillation. When the synthesis temperature is 160°C, the concentration of sodium chloride is 0.0002M and the molecular weight of PVP is 1,300,000 M.W, the optimal Ag NWs are produced. The characteristic of the experiment is that no centrifugation is required and the total process time is only 1 hour. Ag NWs combined with polydimethylsiloxane (PDMS), the impedance is reduced by 3 times by thermal annealing at 200C. The transmittance can reach 57.7%, which can be used as a transparent and stretchable conductive sensor substrate.

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The two-dimensional (2D) material molybdenum disulfide (MoS2) has attracted significant attention as a potential semiconductor material for the next generation due to its unique structure and properties. This research aims to develop a technique for directly growing two-dimensional MoS2 films on silicon-based SiO2 films. The objective is to mitigate the issues arising from transfer-induced integrity problems, alignment challenges, and impurities. This approach aims to streamline the process steps while delving into its potential as the next-generation semiconductor material.

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This study employs Quokka 2 simulations to optimize the design of interdigitated back contact (IBC) silicon solar cells with dopant-free asymmetric hetero-contacts. We focus on the impact of varying hole and electron transport layer (HTL and ETL) widths and the gap between them on cell efficiency for both n-type and p-type substrates. Our results indicate that optimizing the gap width to 5 μm using advanced shadow-mask patterning can enhance cell efficiency from 23.9% to 24.7%, offering a pathway for cost-effective, high-efficiency IBC solar cells.

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Cu2O nanowires (NWs) grown by the hybrid process of atmospheric pressure plasma oxidation at 300°C for 10 min and thermal oxidation at 300°C for 50 min, revealed the optimal photocurrent density was -2.92 mA/cm2 measured at 0 V (RHE). The formation of PN junctions hetero-structure resulted in the effective and rapid separation of electron-hole pairs occurred on the electrode surfaces and enhanced the redox reactions. The deposition of ZnO nanoparticles (NPs) on the surface of Cu2O NWs with optimal photocurrent density was -7.72 mA/cm2 measured at 0 V (RHE). The solar-to-hydrogen (STH) conversion efficiency was 1.73% for ZnO/Cu2O photocathode.

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We discuss the effect of the perovskite film in different doping ratios of the cesium
chloride (CsCl) and methylamine hydrochloride (MACl). Finally, the solar cell prepared with
Cs0.1MA0.09FA0.81PbCl0.14I2.86 as the active layer has the best photovoltaic characteristics, and
its PCE reaches 18.6%.

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In this study, the effect of different oxygen partial pressures on ZnWO4 based RRAM devices was investigated. The results show that films with excessive partial pressure exhibit lower HRS/LRS ratios as well as centralized formation voltage. These outcomes point to a strong correlation between the oxygen partial pressure and the filament formation mechanism.

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This paper investigates the hybrid deposition of E-gun evaporation and RF magnetron sputtering for molybdenum trioxide (MoO3) doped titanium dioxide (TiO2) used on complementary electrochromic devices. The main electrochromic layer consists of MoO3 doped with TiO2, and the auxiliary electrochromic layer is made of nickel oxide (NiO). X-ray diffraction (XRD) analysis confirmed the formation of a beneficial orthorhombic phase α-MoO3, which contributes to the electrochromic effects. However, the transmittance variation (ΔT) of device can reach 61.3% at 550nm. The response times for coloring (tb) and bleaching (tc) are 8 seconds and 9 seconds, respectively.

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The (InxGa1-x)2O3 films with different In/Ga ratio and HCl content in precursor were prepared by spray pyrolysis at 450oC. The film optical bandgap and temperature dependent electric conductivity were characterized. The electrical conductivity with reduced defect-related activation energy were characterized for the films with the increased In/Ga ratio in precursor. The reduced electrical conductivity was characterized for sample InGaO3 after 600oC anneal process prepared with 10% HCl in precursor. Shallow defects formed for sample after 700oC anneal process.the conductivity of the (InxGa1-x)2O3 with different activation energy for the film prepared by spray pyrolysis were characterized.

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This study controlled the number of cancer cells at 2,500, 5,000, 7,500, 10,000, and the volume of the solution to be tested was set at 20 µl. The P-type biosensor has the most significant effect on intracellular GSH response, the measured The magnitude of the transient photocurrent will decrease with the number of cancer cells and the degree of canceration. According to the experimental results, the degree of canceration and the kind of cancer cells in each tube of pleural effusion can be quickly judged, and the regression analysis coefficient of determination.

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This study investigates the benefits of front selective area TOPCon in industrial bifacial TOPCon solar cells, employing Sentaurus TCAD for optical ray tracing and Quokka2 for electrical simulations. Our simulations project a potential efficiency of approximately 25.2%, guided by optimal parameters from scholarly sources and the industrial standards reported in ITRPV 2023. Notably, a 25% efficiency is also attainable with a 150 μm wide selective TOPCon area, rendering this process more cost-effective and suitable for mass production.

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In the study, we propose hybrid counter electrodes to improve the performance of dye-sensitized solar cells. The counter electrode with a concentration of 0.130 mg/ml of nickel nanowire array on the nickel sulfide film achieved the highest conversion efficiency of 8.94%. This efficiency was 1.57% higher than that of the traditional counter electrode material platinum in dye-sensitized solar cells. There is great potential to replace platinum as the electrode material in dye-sensitized solar cells, which would reduce costs and further advance the commercialization of dye-sensitized solar cells in the future.

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This study demonstrates high-quality GaN thin film deposition on Si(111) substrates via RF reactive magnetron sputtering. An AlN buffer layer alleviates lattice mismatch between silicon and GaN. Sputtering parameters optimization enhances GaN film quality. X-ray diffraction reveals dominant (002) phase (2θ ~ 34.5°) with narrow 0.96° FWHM in sputter-deposited GaN. At 10 K, photoluminescence spectra exhibit a 3.387 eV (~366 nm) emission peak.

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In this study, plasma-enhanced atomic layer deposition (PEALD) method is used to deposit anti-reflection film on PMMA substrate. The oxidation method of oxygen mixed with argon plasma is used at low temperature process 70ºC. The TiO2 anti-reflective film can be extended to 998 hours without insertion into the inhibition layer under the condition of temperature 85°C and humidity 85%RH.

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In this study, β-Gallium Oxide was grown on off-angled sapphire substrates by hydride vapor phase epitaxy. The crystal quality is optimized by changing the experimental conditions and annealing. And confirm through the instrument whether off-angle sapphire and
annealing are helpful for gallium oxide epitaxy. Single crystal film of β-Ga2O3 with a full-width half maximum of XRD rocking curve is 0.25 °

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We demonstrate the fabrication of an Al/SiO2/Si MIS device and the characterization of its photocurrent characteristics. An electron beam evaporation was used to deposit the amorphous type SiO2 dielectric layer. It is able to achieve a maximum responsivity of 0.03 A/W at a UV wavelength of 300 nm ~ 350 nm and with strong rejection against white light. Photocurrent of the MIS device with different thicknesses of SiO2 layer was studied. A photocurrent mechanism based on the photo-excited defect states of the amorphous SiO2 and the drifting mechanism was used to explain the results.

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The optical and surface properties of the polydimethylsiloxane layers were investigated using a normal incidence spectrophotometer, variable incidence angle spectroscopic ellipsometry, and a contact angle measurement system after the surfaces of the polydimethylsiloxane layers were treated with low pressure oxygen plasma.

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The Ga2O3 films with different Sn doping (Ga2O3:Sn) were prepared by spray pyrolysis at 450oC on p-Si substrate. The film deposition rate and electric conductivity for the Ga2O3:Sn films was studied. With post 800oC anneal process, enhanced film conductivity and small film thickness reduction were characterized. Film with enhanced conductivity 0.029 Scm-1 was characterized after 800oC anneal process for the film with 3% Sn doping in precursor. The post anneal process shows an effective method for conductivity enhancement for the Ga2O3:Sn film deposited by spray pyrolysis.

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In this paper, the pulsed laser deposition method was used to grow the copper oxide film on the C-plane sapphire substrate. The experiment used the laser light source Nd:YAG laser, and the wavelength of the quadrupled frequency is 266nm, the pulse width was <10ns, and the pulse frequency is 10HZ. X-ray diffraction (XRD) is used to understand the quality of film growth;ultraviolet-visible spectrometer (UV-VIS) is used to measure the transmission spectrum of the film, and then the film is placed in methylene blue solution for photocatalytic experiments to understand the effect of its photocatalyst.

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This study produced Cu-doped CrO2 thin films through reactive magnetron sputtering at deposition pressures from 3 to 7 mTorr. Following deposition, rapid thermal annealing (RTA) occurred at 600 °C for 5 minutes. The investigation encompassed structural, optical, and electrical analyses. X-ray diffraction (XRD) revealed distinctive CuCrO2 phase peaks at (006) and (012) orientations. Notably, the 3 mTorr-deposited film showcased exceptional attributes, including 76% transmittance in the visible range and 12.46 Ω-cm resistivity. These findings hold significance for advancing transparent UV photodetectors.

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We deposited Cu-Doped CrO2 (CuCrO2) delafossite thin films on quartz substrates using reactive RF magnetron sputtering. Films were made from a copper-chromium metal alloy target with a 1:1 mass ratio, employing oxygen and argon as sputtering gases. X-ray diffraction (XRD) confirmed well-defined CuCrO2 crystal structures. Transmittance measurements revealed 65% transmittance in the 550 ~ 800 nm visible wavelength range. The films exhibited a minimum resistivity of 3.0 Ω-cm and a high carrier concentration of 3.0×1019 cm-3.

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In this study, Yttrium oxide (Y2O3) and yttrium aluminum garnet (YAG) were coated on B270 substrates using an ion-assisted electron gun (E-gun) evaporation system. Different coating parameters were investigated, including the use of ion sources. A microwave plasma etching machine was then used to etch the thin film coatings under different parameters, while fixing the microwave power and gas ratio. The white light interferometry was used to measure the etching thickness. The results showed that the corrosion resistance of YAG is better than Y2O3.

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This work presents a four-layer anti-reflection coating (ARC) design using SiO2 and Ta2O5 materials with Essential Macleod software. The four-layer anti-reflection coatings were prepared by ion-beam assisted deposition and electron beam evaporation system. The proposed four-layer anti-reflection coating achieved a transmittance of 99% in the visible light range and exhibited a compressive residual stress of 33 MPa.

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In this research, we prepared SZTO thin-film transistors using magnetron sputtering. By controlling the sputtering power of silicon oxide, we adjusted the number of free carriers and defects to modify the electrical characteristics of the thin-film transistors. The results showed that the sputtering power of silicon oxide had a significant influence on the drain current leakage, decreasing from 7.88×10^(-9) to 3.71×10^(-11), due to the suppression of the oxygen vacancies.

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An ITO-free electrochromic bleached black coating was fabricated from a single W target at room temperature by a pulsed dc magnetron sputtering system. The black coating consisted of three pairs of double-layer films, and each pair included an electrochromic WO3 layer and an electrode W layer.

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ZnO is an inorganic compound with good optical properties. It has high transmittance in the visible wavelength range and can be used for transparent conductive films. ZnO has a wide bandgap, making it suitable for various applications like thin film transistors and solar cells. Doping Ga content improved its conductivity. Achieving p-type ZnO is challenging due to its chemical structure, but Ga-N co-doping successfully produced a p-type transparent conductive film with high transmittance and excellent electrical properties: low resistivity, high mobility, and high carrier concentration.

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Organic solar cells (OSCs) are devices that converts solar energy into electricity,
and photoelectric conversion efficiency (PCE) is one of the important parameters to evaluate
the performance of OSCs. We propose a new idea for the optical structure design of OSCs in
order to improve its PCE

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In this experiment, we employed a cost-effective and easily-prepared method, known as the ultrasonic spray pyrolysis, to synthesize the TiO2 photocatalysis. The goal of this study was to investigate the influence of silver-doped titanium dioxide thin films on the degradation of methylene blue. The experimental results revealed that the degradation rate of methylene blue increased dramatically from 22% to 57% as Ag was doped

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With the rapid development of semiconductors, it’s a new trend to make research on new materials and new structure memories as it becomes more difficult to shrink the device size. In the study, we fabricate a new generation memory, or Resistive Random Access Memory (RRAM), with MgSiO3 switching layer. This study investigates the impact of different film densities on MgSiO3 based RRAM devices. The results demonstrate that films with higher densities exhibit larger Forming voltage as well as a higher HRS/LRS ratio. These findings suggest a significant correlation between the mechanism of conductive filament formation and film density.

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