Session Index

TBA

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In this study, we measured photovoltaic external quantum efficiency and electroluminescence external quantum efficiency of the devices to characterize the energy loss of open-circuit voltage in perovskite solar cells with different hole transport layers. The results show that the non-radiative recombination loss is the majority impact factor. Moreover, it is affected by the energy alignment between the hole transport layer and the perovskite layer. According to the results of photoluminescence and time-resolved photoluminescence, the non-radiative recombination contributes to the photoluminescence quenching effect in the interface between the hole transport layer and perovskite.

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In the pursuit of commercialization, a feasible strategy involves refining the vapor deposition process for producing perovskite thin films and transport layers, offers numerous remarkable advantages including precise control of layer thickness, exceptional homogeneity of the resultant thin film, and the ability to select appropriate materials and compositions. In this work, we employed an all-vacuum deposition process for the fabrication of MHP solar cells. As a result, the devices achieved remarkable performance, including an open circuit voltage of 0.95V, a short circuit current density of 21.02 mA/cm2, a fill factor of 68.32%, and a PCE of 13.64%.

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In inverted structure perovskite solar cell, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) is considered the best choice for the hole transport layer (HTL), regardless of optical properties or electrical conductivity. However, its hydrophobic surface impedes the development of perovskite thin films. Here, discuss the modification of the PTAA surface, aimed at enhancing device efficiency. This involves addressing the issue of incomplete perovskite film coverage by adjusting the perovskite mixed solvent. Additionally, we utilize PFN-Br to modify the PTAA/Perovskite interface, effectively reducing perovskite defects and achieving the best device efficiency values of VOC=1.10 V, JSC=21.38 mA/cm², FF=77.95 %, and PCE=18.27 %.

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We successfully use polyethylenimine ethoxylated (PEIE) as a buffer layer to mitigate ion bombardment damage during the sputtering of transparent conductive oxide (TCO) in our process. We fabricated large-area bifacial devices, achieving PCE of 15.21 %, and produced a perovskite/silicon tandem solar cell, which reached PCE of 16.51%.

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In this study, researchers employed guanidine hydrochloride (GuHCl) for surface modification of Perovskite Solar Cell (PVK-SC) films. Theoretical simulations of the resulting PVSK:GuHCl exhibited a strong correlation with experimental data, indicating significant performance improvements in the devices. Theoretical analysis results indicate that passivating the surface states of the perovskite layer could improve the device’s performance. Initial tests on perovskite devices without a passivation layer displayed impressive attributes, including a high-power conversion efficiency of 16%. Therefore, there is a strong belief that passivating with PVK:GuHCl will lead to even higher photoconversion efficiency and enhanced stability in solar cell devices.


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Here, we would like to integrate metamaterial absorbers to an indoor solar cell. The total absorption and absorption integral values for the integrated device and the ITO cell are 3.42/276 and 3.45/281, respectively. The difference in the two values is only 0.87% and 1.78%, respectively. With minimal differences in optical absorption, our proposed integrated device features a smaller measured sheet resistance 4.42/□, respectively and benefits from the higher flexibility and lower metal cost. Therefore, we believe our proposed metamaterial perfect absorber could be a promising candidate for transparent conductive electrodes in future indoor low-light photovoltaic cells.

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