Session Index

S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology II
Friday, Dec. 1, 2023  15:15-17:30
Presider: Prof. Mei-Hsin Chen (National Taipei University of Technology, Taiwan) Prof. Peichen Yu (National Yang Ming Chiao Tung University, Taiwan)
Room: 92283 (2F)
15:15 - 15:45
Manuscript ID.  0653
Paper No.  2023-FRI-S0802-I001
Invited Speaker:
Yi-Ming Chang
Organic Photodiode Beyond Photovoltaic Application
Yi-Ming Chang, Raynergy Tek Incorporation (Taiwan)

15:45 - 16:00 Award Candidate (Paper Competition)
Manuscript ID.  0868
Paper No.  2023-FRI-S0802-O001
Tao Deng Useing Quantum dots to Increase GaAs Solar Cells’s Efficiency
Tao Deng, Shun-Chien Hsu, Chien-Chung Lin, National Taiwan University (Taiwan)

In this study we focus on enhancing the conversion efficiency of GaAs solar cells by adding green and red quantum dot. Quantum dots are nanomaterials with unique bandgap structures capable of generating additional charge carriers upon absorbing solar photons, thereby improving the efficiency of the photoelectric conversion process, and the addition of quantum dots can potentially increase the photoelectric conversion efficiency of GaAs solar cells.

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16:00 - 16:15 Award Candidate (Paper Competition)
Manuscript ID.  0936
Paper No.  2023-FRI-S0802-O002
Han-Wei Wang Ultraviolet C AlGaN-based Photodetectors
Han-Wei Wang, Yen-Da Chen, Chia-Feng Lin, National Chung Hsing University (Taiwan)

Ultraviolet C AlGaN-based light-emitting diodes and PIN-type photodetectors (PD) with an embedded porous AlGaN layer were demonstrated. The n-type Al0.6GaN:Si layer with high Al content was transformed into the conductive porous AlGaN:Si layer through the electrochemical (EC) wet etching process. The relative reflectivity of the treated structure was higher than the non-treated structure. High electroluminescence emission intensity, peak wavelength redshifted from 272.8 to 273.4 nm, and low interference oscillation were observed by forming the porous AlGaN layer. For the PD structures, the peak responsivity was measured at about 255 nm.

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16:15 - 16:30 Award Candidate (Paper Competition)
Manuscript ID.  0550
Paper No.  2023-FRI-S0802-O003
Ming-Hsien Chiang Designing Chromatic Stability Methods for Antireflective Coatings
Ming-Hsien Chiang, BASO Precision Optics LTD. (Taiwan), Feng Chia University (Taiwan); Chien-Jen Tang, Feng Chia University (Taiwan)

This study simulated different peak wavelength positions and peak reflectance values of anti-reflective coating. The distribution of chromaticity coordinates was analyzed when there were random errors in film thickness. The objective was to identify the optimal design methodology for an antireflective coating that minimizes chromatic deviation.

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16:30 - 16:45 Award Candidate (Paper Competition)
Manuscript ID.  0345
Paper No.  2023-FRI-S0802-O004
Yun-Jie Jhang Predicting Thin Film Color Using Deep Learning: From Optical Properties to Machining Parameters
Yun-Jie Jhang, Chia-Hung Chou, Yuan-Fang Lee, Zong-Ying Yang, Hung-Wen Chen, National Tsing Hua University (Taiwan)

We propose deep learning models for accurately predicting Lab color values in laser-induced thin film coloration, utilizing both simulated and real-world machining parameters. The models demonstrated impressive performance, achieving ΔE values of 0.77 and 3.55 for simulated and real-world datasets, respectively. The results indicate promising potential for deep learning in enhancing efficiency and precision in predicting laser-induced coloring.

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16:45 - 17:00 Award Candidate (Paper Competition)
Manuscript ID.  0327
Paper No.  2023-FRI-S0802-O005
Chung-Tien Chiu A Diode-Connected 7T1C AMOLED Pixel Circuit Using LTPO TFTs for Low Refresh Rate Smartwatch Displays
Chung-Tien Chiu, Yi-Chien Chen, Jui-Hung Chang, National Cheng Kung University (Taiwan); Po-Cheng Lai, AUO Corporation (Taiwan); Chih-Lung Lin, National Cheng Kung University (Taiwan)

This work introduces a 7T1C AMOLED pixel circuit designed to address the issues of VTH variations and leakage current. HSPICE simulation results demonstrate that the relative current error rates are less than 2%. Additionally, the offsets of driving current are only 0.68 nA, 0.52 nA, and 0.54 nA for high, medium, and low gray levels, respectively.

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17:00 - 17:15 Award Candidate (Paper Competition)
Manuscript ID.  0763
Paper No.  2023-FRI-S0802-O006
Wei-Han Wang Optical properties of Thin-film Metallic Glass in Thermal Infrared Region
Wei-Han Wang, Chia-Chien Lai, Tzu-Chieh Hsiao, Sih-Wei Chang, Hsuen-Li Chen, National Taiwan University (Taiwan)

This study displays the optical properties of thin-film metallic glasses (TFMGs) in the thermal infrared (IR) region. Applying optical thin film theory, we could modulate the emissivity of TFMG in the thermal IR region. The measured emissivity of the TFMG (45.35%) was significantly enhanced when compared with that of a Si substrate or metal film. Our findings reveal that metallic glass films can display thermal radiative properties superior to those of metals and semiconductors, making them promising materials for use in electronic devices with heat dissipation properties.

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17:15 - 17:30 Award Candidate (Paper Competition)
Manuscript ID.  0764
Paper No.  2023-FRI-S0802-O007
Chin-Jung Chiu Study the Scaling of AlGaN Back Barrier in GaN HEMTs
Chin-Jung Chiu, Yuh-Renn Wu, National Taiwan University (Taiwan)

This study focuses on enhancing HEMT high-frequency performance through gate length scaling. However, as gate lengths decrease, the short channel effect and buffer leakage become significant challenges. The design of back-barrier effectively suppresses buffer leakage, lowers subthreshold swing (SS), and enhances the device’s fT. Thicker back barriers demonstrate better results, with the 50nm back barrier achieving an fT of 179 GHz, which is higher than the 30nm back barrier with fT of 174 GHz. However, excessively thick barriers may create a secondary channel. These findings offer valuable insights for optimizing GaN HEMT characteristics.

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