Session Index

TBA

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In this study we focus on enhancing the conversion efficiency of GaAs solar cells by adding green and red quantum dot. Quantum dots are nanomaterials with unique bandgap structures capable of generating additional charge carriers upon absorbing solar photons, thereby improving the efficiency of the photoelectric conversion process, and the addition of quantum dots can potentially increase the photoelectric conversion efficiency of GaAs solar cells.


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Ultraviolet C AlGaN-based light-emitting diodes and PIN-type photodetectors (PD) with an embedded porous AlGaN layer were demonstrated. The n-type Al0.6GaN:Si layer with high Al content was transformed into the conductive porous AlGaN:Si layer through the electrochemical (EC) wet etching process. The relative reflectivity of the treated structure was higher than the non-treated structure. High electroluminescence emission intensity, peak wavelength redshifted from 272.8 to 273.4 nm, and low interference oscillation were observed by forming the porous AlGaN layer. For the PD structures, the peak responsivity was measured at about 255 nm.

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This study simulated different peak wavelength positions and peak reflectance values of anti-reflective coating. The distribution of chromaticity coordinates was analyzed when there were random errors in film thickness. The objective was to identify the optimal design methodology for an antireflective coating that minimizes chromatic deviation.

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We propose deep learning models for accurately predicting Lab color values in laser-induced thin film coloration, utilizing both simulated and real-world machining parameters. The models demonstrated impressive performance, achieving ΔE values of 0.77 and 3.55 for simulated and real-world datasets, respectively. The results indicate promising potential for deep learning in enhancing efficiency and precision in predicting laser-induced coloring.

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This work introduces a 7T1C AMOLED pixel circuit designed to address the issues of VTH variations and leakage current. HSPICE simulation results demonstrate that the relative current error rates are less than 2%. Additionally, the offsets of driving current are only 0.68 nA, 0.52 nA, and 0.54 nA for high, medium, and low gray levels, respectively.

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This study displays the optical properties of thin-film metallic glasses (TFMGs) in the thermal infrared (IR) region. Applying optical thin film theory, we could modulate the emissivity of TFMG in the thermal IR region. The measured emissivity of the TFMG (45.35%) was significantly enhanced when compared with that of a Si substrate or metal film. Our findings reveal that metallic glass films can display thermal radiative properties superior to those of metals and semiconductors, making them promising materials for use in electronic devices with heat dissipation properties.

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This study focuses on enhancing HEMT high-frequency performance through gate length scaling. However, as gate lengths decrease, the short channel effect and buffer leakage become significant challenges. The design of back-barrier effectively suppresses buffer leakage, lowers subthreshold swing (SS), and enhances the device’s fT. Thicker back barriers demonstrate better results, with the 50nm back barrier achieving an fT of 179 GHz, which is higher than the 30nm back barrier with fT of 174 GHz. However, excessively thick barriers may create a secondary channel. These findings offer valuable insights for optimizing GaN HEMT characteristics.

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