Session Index

S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology III
Saturday, Dec. 2, 2023  10:45-12:00
Presider: Dr. Chih-Wei Chu (Academia Sinica, Taiwan) Dr. Chi-Chung Kei (Instrument Technology Research Center, Taiwan)
Room: 92283 (2F)
10:45 - 11:15
Manuscript ID.  1090
Paper No.  2023-SAT-S0803-I001
Invited Speaker:
Chi-Chung Kei
Nanostructures Prepared by using Atomic Layer Deposition for Optoelectronic Applications
Chi-Chung Kei, Advanced Process and Equipment Development Division, Taiwan Instrument Research Institute (TIRI) (Taiwan)

Atomic layer deposition (ALD) has been used extensively for depositing thin films in the semiconductor and
optoelectronic industries. The self-limiting character of ALD allows accurate thickness control and superior
coating conformality over a complex structure. With the assistance of nanostructured templates, hollow
nanostructures, such as nanotubes, can be fabricated by using ALD. It is promising to manufacture various
nanostructures for optoelectronic applications by using ALD and templates. We have successfully fabricated
ZnO, VO2, and TiO2 nanostructures for the optoelectronic applications, such as photocatalysis,
photoelectronchemical water splitting, and thermochromism. Multiwalled, multilayered or alloyed nanotubes
with superior optoelectronic properties fabricated by using nanolamination ALD processes will be also presented
in this talk. On the other hand, metallic nanoparticles (NPs), such as Pt and Ni, can be prepared by using ALD
due to insufficient nucleation sites on the substrate. The size of NPs can be easily controlled by changing the
cycle number of ALD, allowing the adjustment of optical properties.

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11:15 - 11:30 Award Candidate (Paper Competition)
Manuscript ID.  0756
Paper No.  2023-SAT-S0803-O001
Hsin-Wen Huang Study of Bilayer MoS2 and WSe2 Transport Properties and Their Application in MOSFET
Hsin-Wen Huang, Yuh-Renn Wu, National Taiwan University (Taiwan)

Transition metal dichalcogenide (TMD) material is an excellent candidate for avoiding short-channel effects. One study shows the few-layer MoS2 nanosheet transistors have better performance than the monolayer one [1]. Therefore, we investigate the transport properties of bilayer MoS2 and bilayer WSe2 and utilize them as channels in our double-gate MOSFET design. Our result shows that bilayer MoS2 devices and bilayer WSe2 p-type devices have a nice channel control ability. The sub-threshold swing values are 65~60 mV/dec with a gate length longer than 7 nm. Among these two materials, the bilayer MoS2-based device shows more promising characteristics

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11:30 - 11:45 Award Candidate (Paper Competition)
Manuscript ID.  0766
Paper No.  2023-SAT-S0803-O002
Zhi-Hao Chen Optimization of The Base-Collector Junction of Type-I InP HBT by Designing Epi Structure
Zhi-Hao Chen, Yuh-Renn Wu, National Taiwan University (Taiwan)

To achieve a higher fT of an HBT device, maximizing the device's gm (ΔIC/ΔVBE) and minimizing the device's equivalent capacitance play crucial roles. This work introduces a quaternary material (InGaAlAs) chirped-SL (Chirped Superlattice) structure into the Base-Collector grade. This allows for diminishing the conduction band's discontinuity and gradually increasing the effective bandgap from the base to the collector of the B-C junction without changing the thickness of the barrier layer. Quaternary superlattice structures exhibit lower equivalent capacitance than ternary superlattices and achieve higher IC (collector current) than quaternary gradient layers.

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11:45 - 12:00 Award Candidate (Paper Competition)
Manuscript ID.  0894
Paper No.  2023-SAT-S0803-O003
Li-Cheng Huang Deposition and Optimization of High-Quality GaN Thin Films on Glass Substrates through RF Magnetron Sputtering
Li-Cheng Huang, Wei-Sheng Liu, Balaji Gururajan, Kuo-Jui Hu, Guo-Hong Shen, Yuan Ze University (Taiwan)

We deposited high-quality GaN thin films on glass substrates using RF reactive magnetron sputtering with high-purity gallium (8N). The process was optimized to enhance crystal quality, aided by an AlN buffer layer to improve the crystal quality of GaN films. X-ray diffraction confirmed the (002) crystal phase with a narrow FWHM of 0.85°. Low-temperature photoluminescence exhibited a band-edge emission at 3.36 eV (369 nm). X-ray photoelectron spectroscopy revealed strong Ga-N bonding. RF magnetron sputtering proved effective for depositing GaN films on glass, offering potential for optoelectronic applications.

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