Session Index

S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology IV
Saturday, Dec. 2, 2023  13:00-15:00
Presider: Prof. Chia-Feng Lin (National Chung Hsing University, Taiwan) Prof. Zingway Pei (National Chung Hsing University, Taiwan)
Room: 92283 (2F)
13:00 - 13:15
Manuscript ID.  0145
Paper No.  2023-SAT-S0804-O001
Hao-Wei Kao Raman Spectroscopy Analysis of Hetero-epitaxial Silicon Carbide by Reactive Radio Frequency Magnetron Sputtering
Hao-Wei Kao, Hsi-Chao Chen, National Yunlin University of Science and Technology (Taiwan); Bo-Huei Lia, Sheng-De Wong, Taiwan Instrument Research Institute (Taiwan); Xin-Ya Zheng, You-Sheng Yang, Kun-Zu Yi, National Yunlin University of Science and Technology (Taiwan)

The research proposal is to heterogeneous growth carbide (SiC) films on silicon (Si) substrates using reactive radio frequency (RF) magnetron sputtering. The substrates are heated to 600℃ to achieve epitaxial growth of SiC films. In order to avoid target damage from heat accumulation, we utilize reactive RF sputtering technique with Si targets and methane (CH4) gas. The bonding properties of SiC films under different RF power levels were analyzed using Raman spectroscopy. The experimental results demonstrate that the RF power of 150W represents the critical point for Si-C bonds and get 4H-SiC crystal after 1200 annealing.

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13:15 - 13:30
Manuscript ID.  0323
Paper No.  2023-SAT-S0804-O002
Matej Sebek Terahertz induced electron emission from ultrathin Au films
Matej Sebek, Tobias Olaf Buchmann, Simon Jappe Lange, Peter Uhd Jepsen, Technical University of Denmark (Denmark)

This study explores the under-investigated terahertz properties of ultrathin metallic films, specifically electron emission. We observe this emission in ultrathin gold films, driven by a strong THz field. Films of around 2 nm thickness show efficient absorption and significant electron emission. Our analysis, employing Time-of-Flight (TOF) measurements and electron energy distribution fitting, indicates that electron emission is a result of the interaction between hot electrons and the THz electric field.

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13:30 - 13:45
Manuscript ID.  0675
Paper No.  2023-SAT-S0804-O003
Yu-Sheng Zhou Solution-Processed Nanocomposite with Blended MXene-Polythiophene Semiconducting Network Field-Effect Transistor
Yu-Sheng Zhou, Gen-Wen Hsieh, National Yang Ming Chiao Tung University (Taiwan)

MXene, a new class of 2D materials, is being grad-ually used in energy storage, sensor, catalyst, super-capacitor, and other fields. We also anticipate that MXene can be an enabler in organic-based transistors. Here, we attempt to incorporate titanium carbide Ti3C2Tx MXene into a polythiophene semiconducting layer, in the hope of boosting charge carrier transport. Primary results show a 4-fold enhancement in mobility when 1.0 wt% of MXene is blended. The hybrid tran-sistor also reveals a prolonged air stability with re-spect to pristine polythiophene device.

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13:45 - 14:00
Manuscript ID.  0198
Paper No.  2023-SAT-S0804-O004
Yu-Han Huang Bifacial Perovskite Solar Cells with Gold Transparent Electrodes Grown on Molybdenum Disulfide
Yu-Han Huang, National Taiwan University (Taiwan), Academia Sinica (Taiwan); Hanmandlu Chintam, Academia Sinica (Taiwan); Chao-Hsin Wu, National Taiwan University (Taiwan); Chih-Wei Chu, Shih-Yen Lin, Academia Sinica (Taiwan)

We have fabricated bifacial perovskite solar cells with 10 nm Au/MoS2 and ITO transparent electrodes (TEs) on glass substrates. Compared with the reference device with 100 nm Ag and ITO electrodes, similar PCE values ~ 12 % are observed for the two devices when solar light is irradiated from ITO side. When the solar light illuminates from metal side, only the device with the 10 nm Au/MoS2 TE exhibits similar short-circuit current and PCE value ~ 11.4 %, which have demonstrated the potential of 2D material-assisted nanometer-thick Au films for TE applications in bifacial and tandem solar cells.

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14:00 - 14:15
Manuscript ID.  0686
Paper No.  2023-SAT-S0804-O005
Qing-Kai Xie Investigation of Interface Absorption in Nb2O5/SiO2 Multilayers
Qing-Kai Xie, Chien-Jen Tang, Feng Chia University (Taiwan)

We examine how thin-film interfacial absorption layers form between Nb2O5 and SiO2. The main aim of this research is to understand the optical properties of the interface, which are crucial for optoelectronic applications. Moreover, we use various target materials to apply anti-reflective coatings and discuss the outcomes obtained from spectroscopy. Overall, this investigation enhances our comprehension of the relationship at the Nb2O5/SiO2 interface.

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14:15 - 14:30
Manuscript ID.  0847
Paper No.  2023-SAT-S0804-O006
Ya-Ching Lin Epitaxial Growth of GaN Epilayers on Si and AlN/Si Templates at 600°C
Ya-Ching Lin, Hung-Sheng Liu, Sheng-Hui Chen, National Central University (Taiwan)

GaN layers were directly epitaxial grown at 600°C using the high power impulse magnetron sputtering technique, in contrast to the MOCVD method that demands temperatures exceeding 1000°C. In this epitaxial process utilizing N2/Ar mixture gas and Ga target, the GaN layers were directly grown on Si (111) substrates and Si (111) substrates with AlN buffer layers. XRD measurements of full-width at half-maximum (FWHM) reveal that the GaN layer with the AlN buffer layer exhibits significantly lower FWHM and stronger intensity. SEM results indicate that the GaN layer deposited on the AlN buffer layer displays a relatively smooth surface.

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14:30 - 14:45
Manuscript ID.  1002
Paper No.  2023-SAT-S0804-O007
Yu-Jie Zhang Propagation of surface plasmon polariton on a silver coated polymer grating prepared by oblique angle deposition
Yi-Jun Jen, You-Ting Jian, Yu-Jie Zhang, National Taipei University of Technology (Taiwan)

In this work, the optical response and in-plane surface plasmon polariton of a grating prepared by oblique angle deposition of silver is proposed. Based on the P-polarized reflection peak at certain wavelengths. The surface plasmon polariton propagation on the surface of silver coated grating is investigated here. By analyzing the radiation on the surface from a dipole above the surface with FDTD method, the in-plane iso-frequency curves are derived and reveal the anisotropic properties of the grating surface. The results show that the grating surface exhibits anisotropic behavior due to the oblique angle deposition.

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14:45 - 15:00
Manuscript ID.  0839
Paper No.  2023-SAT-S0804-O008
Bi-Ting Wu Measurements of Perovskite Nanocrystals Fluorescence Lifetime by a Custom-built Frequency-domain System Based on FPGA
Bi-Ting Wu, Yung-Yi Chuang, Zhen-De Lin, Yi-Chun Chen, National Yang Ming Chiao Tung University (Taiwan)

We report a custom-built frequency domain fluorescence lifetime instrument, which enables fluorescence lifetime measurement of fluorophore species at various modulation frequencies (200kHz-30MHz). Fluorescence excitation is carried out by light-emitting diodes (LEDs), and frequency output of the excitation light source and photomultiplier tube (PMT) is directly controlled by programmable logic gate array (FPGA). With this system, we measured and analyzed fluorescence lifetimes of CsPbBr3 at different concentrations.

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