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09:00 - 09:15
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Manuscript ID. 0216
Paper No. 2023-SUN-S0806-O001
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| Po-Chih Chu
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In-situ Investigation of Lithium-ion Batteries with High-Entropy Oxides anode via Novel Surface Analysis Techniques
Po-Chih Chu, National Sun Yat-Sen University (Taiwan); Ya-Ping Liu, National Central University (Taiwan); Chia-Jou Lin, National Sun Yat-Sen University (Taiwan); Wei-Hsuan Hung, National Central University (Taiwan); Wei-Chun Lin, National Sun Yat-Sen University (Taiwan)
In this study, we investigate the electrical properties and surface chemistry of MgNiCoZnCu high-entropy oxides (HEOs), which is used as anode material in lithium-ion batteries (LIBs). The composition and chemical state of the material was examined by X-ray Photoelectron Spectroscopy (XPS). Ultraviolet Photoelectron Spectroscopy (UPS) and Low Energy Inverse Photoelectron Spectroscopy (LEIPS) are used to investigate the band structure information. The quantification and bandgap variations of HEOs are crucial for discovering electrochemical properties and battery performance during the operation. Our goal is to reveal the formation of irreversible capacitances of HEOs materials and the HEOs electrode working mechanisms in LIBs.
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09:15 - 09:30
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Manuscript ID. 0270
Paper No. 2023-SUN-S0806-O002
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| Hong-Cheng Kuo
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Incorporation of Vertically Oriented Graphene Nanoflakes Doped PC61BM in Inverted Structure Perovskite Solar Cells
Hong-Cheng Kuo, Chun-Wei Liu, National Yang Ming Chiao Tung University (Taiwan); Mei-Hsin Chen, National Taipei University of Technology (Taiwan); Wei-Shiuan Tseng, National Yang Ming Chiao Tung University (Taiwan)
The electron transport layer (ETL) is a critical part affecting the electron extraction of perovskite solar cells (PSCs). In this study, vertically oriented graphene nanoflakes (GNF) were synthesized by Plasma Enhanced Chemical Vapor Deposition (PECVD) system and successfully introduced into the ETL (PC61BM) of inverted perovskite solar cells. The best power conversion efficiency of PC61BM:GNF device achieved 15.34%, which is much higher than 13.06% of the one without GNF. Furthermore, all photovoltaic characteristics were improved such as Voc from 1.019 V to 1.07 V, Jsc from 18.745 mA/cm2 to 19.489 mA/cm2, and FF from 68.39% to 73.8% after GNF incorporation.
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09:30 - 09:45
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Manuscript ID. 0694
Paper No. 2023-SUN-S0806-O003
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| Chun-Han Wu
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Growth of Sp2-bonded BN Thin Films on Si(111) Using Low-Pressure Chemical Vapor Deposition
Chun-Han Wu, Jian-Yu Li, Zhong-Jun Jiang, Sheng-Hui Chen, National Central University (Taiwan)
The sp2-bonded boron nitride film demonstrates remarkable thermal conductivity and insulating characteristics. In this research, sp2-bonded BN thin films were grown on the Si(111) substrate utilizing two distinct precursor injection approaches. High-resolution scanning transmission electron microscopy was employed to measure and analyze the sp2-bonded boron nitride films under varying precursor injection methods.
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09:45 - 10:00
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Manuscript ID. 0899
Paper No. 2023-SUN-S0806-O004
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| Shin-Yu Lai
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Effect of NiO interlayer on the optical and the electrical properties in CuAlO2/NiO/CuAlO2 sandwich structure
Shin-Yu Lai, Tzu-Chun Chen, Balaji Gururajan, Wei-Sheng Liu, Yuan Ze University (Taiwan)
We demonstrate the advantage of using NiO as the interlayer with CuAlO2 to form a CuAlO2/NiO/CuAlO2 composite structure deposited using RF magnetron sputtering. Only P-type layers were used for the fabrication as there is a need to enhance the electrical and optical properties of P-type TCOs. Structural, optical, morphological, and electrical properties were studied for the composite structure.
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10:00 - 10:15
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Manuscript ID. 0223
Paper No. 2023-SUN-S0806-O005
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| Shailesh Rana
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Exciton Dynamics in CH3NH3PbI3 Perovskite Film: Illumination Power-Dependent Electroabsorption
Shailesh Rana, Kamlesh Awasthi, Eric Wei-Guang Diau, Nobuhiro Ohta, National Yang Ming Chiao Tung University (Taiwan)
The influence of the electric field in hybrid halide perovskite materials plays a crucial role in comprehending intriguing optoelectronic phenomena. Here, we report the electroabsorption (E-A) spectra, that is, electric field-induced change in absorption spectra, of methylammonium lead tri-iodide (MAPbI3) film sandwiched between fluorine-doped tin oxide (FTO) and poly(methyl methacrylate) (PMMA) film in both tetragonal and orthorhombic phases. The observed E-A spectra demonstrate the sensitivity to the light illumination power density (IL-D) at a low modulation frequency (M-F) of the applied electric field (Fa). However, this dependence of E-A spectra on IL-D diminished when the M-F was high.
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10:15 - 10:30
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Manuscript ID. 0299
Paper No. 2023-SUN-S0806-O006
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| Yen-Chi Wang
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Rapid Preparation of Silver Nanowires by Magneto-Oscillating Polyol Method on Polydimethylsiloxane as Highly Transmittance Conductive Substrate
Yen-Chi Wang, Hsi-Chao Chen, Chih-Yuan Chang, Guan-Yu Lin, You-Wei Chang, Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan (Taiwan); Ying-Sheng Lin, National Taiwan University Hospital Yunlin Branch (Taiwan); Yi-Zhen Shih, Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan (Taiwan)
The research is to prepare silver nanowires (Ag NWs) grown by polyol synthesis with magnet oscillation. When the synthesis temperature is 160°C, the concentration of sodium chloride is 0.0002M and the molecular weight of PVP is 1,300,000 M.W, the optimal Ag NWs are produced. The characteristic of the experiment is that no centrifugation is required and the total process time is only 1 hour. Ag NWs combined with polydimethylsiloxane (PDMS), the impedance is reduced by 3 times by thermal annealing at 200C. The transmittance can reach 57.7%, which can be used as a transparent and stretchable conductive sensor substrate.
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10:30 - 10:45
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Manuscript ID. 0669
Paper No. 2023-SUN-S0806-O007
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| Yi-Ching Ou Yang
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Fabrication of Silicon-based Two-dimensional Molybdenum Disulfide Films
Yi-Ching Ou Yang, Sheng-Ru Chiu, National Central University (Taiwan); Gui-Sheng Zeng, National Applied Research Laboratories (Taiwan); Sheng-Hui Chen, National Central University (Taiwan)
The two-dimensional (2D) material molybdenum disulfide (MoS2) has attracted significant attention as a potential semiconductor material for the next generation due to its unique structure and properties. This research aims to develop a technique for directly growing two-dimensional MoS2 films on silicon-based SiO2 films. The objective is to mitigate the issues arising from transfer-induced integrity problems, alignment challenges, and impurities. This approach aims to streamline the process steps while delving into its potential as the next-generation semiconductor material.
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10:45 - 11:00
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Manuscript ID. 1067
Paper No. 2023-SUN-S0806-O008
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| You-An Li
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Simulation and design optimization of interdigitated back contact silicon solar cells with dopant-free asymmetric hetero-contacts
You-An Li, Jin-Cheng Chen, Yi-Ping Lin, Wei-Shan Hong, National Yang Ming Chiao Tung University (Taiwan); Ying-Yuan Huang, National Yang Ming Chiao Tung University (Taiwan), National Cheng Kung University (Taiwan)
This study employs Quokka 2 simulations to optimize the design of interdigitated back contact (IBC) silicon solar cells with dopant-free asymmetric hetero-contacts. We focus on the impact of varying hole and electron transport layer (HTL and ETL) widths and the gap between them on cell efficiency for both n-type and p-type substrates. Our results indicate that optimizing the gap width to 5 μm using advanced shadow-mask patterning can enhance cell efficiency from 23.9% to 24.7%, offering a pathway for cost-effective, high-efficiency IBC solar cells.
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