Session Index

In this research, we have effectively fabricated gallium nitride (GaN) films on sapphire and 6H-silicon carbide (6H-SiC) substrates through the utilization of high power impulse magnetron sputtering at a low epitaxial temperature. High-power pulsed magnetron sputtering stands as an exceptional surface treatment method, providing benefits including rapid deposition, high uniformity, robust adhesion, and accurate thickness management. Furthermore, its deposition rate exceeds that of the conventional radio-frequency sputtering technique.

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This study investigates different indium-tin-oxide thicknesses for designing defrosting anti-reflective coating. The films were prepared by plasma-assisted reactive magnetron sputtering. The heating characteristics indicated that 1mm of ice on the antireflective coating with an indium-tin-oxide layer (physical thickness of about 250 nm) was wholly removed after 60 seconds when the applied voltage was 12 V.

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Nanoscale metal oxide materials have been extensively studied due to their unique dimension-dependent physical and chemical properties. The sol-gel thin film approach using spin coating is utilized to prepare Ni-doped copper oxide photodetector materials.

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The figure of merit (FOM) of semitransparent solar cells is limited by either high transmittance and low efficiency or low transmittance and high efficiency. The dual absorption layer structure of a-Si:H/a-SiOx:H solar cells combines the energy gap difference (EgL/EgH) and the thickness ratio (DL/DH) to regulate the transmittance and efficiency,aiming to find the optimal FOM. Furthermore,to enhance the light transmission through the n-layer, CO2 gas is introduced to create a high bandgap thin film. The dual absorption layer structure cell with (EgL/EgH=1.704 eV/1.946 eV,DL/DH=50 nm/50 nm) achieves efficiency, average transmittance (400-650 nm), and optimal FOM of 3.09%, 37.92%, and 99.

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Light-emitting diodes (LEDs) are widely used today in fields such as lighting and displays [1]. Among them,perovskite LED with dimmable performance has become a research hotspot [2,3], and the demand for backlight sources of LCD screens has also increased, which has higher requirements for phosphor materials. It is difficult to achieve the ideal color rendering effect when using traditional phosphors with blue chips, but tetravalent manganese red phosphors solve this problem [4,5]. However, tetravalent manganese phosphors contain fluorine,which may cause the risk of pollution in the production line, limiting its large-scale application.

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This study investigates the fabrication of cesium iodide optical films. By controlling variations in substrate temperature during the fabrication process, the study utilizes X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), and X-ray Luminescence Spectroscopy (XL) to measure and analyze the thin film. Additionally, X-ray irradiation of the film is used for imaging purposes. The results reveal that the best crystalline structure and luminescent performance are achieved when preparing the CsI at a substrate temperature of 200°C.

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This study explores the potential of using composite carbon black (N134) as a substitute for platinum in dye-sensitized solar cells. Through optimization and refinement experiments at different concentrations (3M, 4M, 5M) and spinning speeds (2000-4000 rpm), we achieved a superior performance of the composite carbon black counter electrode in dye-sensitized solar cells, with a maximum efficiency of 6.55% and fill factor of 57.34%. These results suggest composite carbon black as a promising, cost-effective alternative to platinum, providing valuable insights for dye-sensitized solar cell technology

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In this study, we fabricated co-sputtered indium gallium oxide ultraviolet photodetectors. The power of the gallium oxide target was fixed at 80W, while the power of the indium oxide target was varied at 20W, 30W, 40W. Device with 30W/80W has the biggest sensitivity of 5.20x10^3, and the device with 40W/80W has the biggest responsivity of 1.72x10^2 A/W. Response/Recovery time increase as the indium doping increased, and then decrease while excessive indium doping.

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Utilizing pulsed magnetron sputtering, high-quality IGZO films were deposited by adjusting the oxygen flow rate and the duration of UV light irradiation on the substrates. This adjustment resulted in films with elevated carrier concentration and minimal surface roughness. Subsequently, this superior films were utilized in the fabrication of thin film transistors. Notably, the channel layer was innovatively designed with a double-layer structure, thereby further enhancing the carrier mobility and On/Off ratio of the device.

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Investigated alumina passivation films on silicon solar cells using atmospheric pressure atomic layer deposition. Enhanced passivation achieved through post-annealing process, compared traditional tube annealing furnace and microwave annealing.
Photoluminescence (PL) imaging and effective minority carrier lifetime (τeff) evaluated passivation. At 400°C annealing, significant lifetime improvement observed. Microwave annealing correlated photoluminescence and minority carrier lifetime trends. Imaging assessed localized passivation quality. Optimal interface state found at 1.5-2.5 nm intermediate layer thickness.

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The Ag3PO4-Na2SiO3 film was prepared by spray pyrolysis at 100oC on glass substrate. The film surface morphology and compositions were examined. The non-uniformed distribution of Ag3PO4-Na2SiO3 with Na2SiO3 gathering was characterized. With repeated operation by the degradation of rhodamine B (RhB) aqueous under visible light illumination, the reduction of photocatalytic ability was observed. With film morphology and crystalline analysis for the pristine and post operated sample, the mechanism for reduced photocatalytic ability of the film was discussed and realized.

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The reflectance of the Extreme Ultraviolet (EUV) multilayer mirror is an important parameter that determines the production capacity in the EUV lithography technology. The reflectance of the EUV multilayer mirror is always lower than the theoretical value due to the Mo and Si materials maxing and diffusing with each other. Thus, in this study, ion beam sputter deposition system was used to fabricate Mo/Si multilayers and B4C layer was added to reduce the thickness of interface diffusion. The Mo-on-Si interface and Si-on-Mo interface diffusion thickness decreased from 0.7nm and 0.46nm to 0.43nm, respectively, after the B4C layer was added.

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Quasi-two-dimensional perovskite single crystals are grown through vapor-venting space-limited crystallization method and used for fabricating solar cell devices. In order to accelerate the crystal growth rate, we add primary alcohols to the perovskite precursor solution to modify their solubilities. As a result, the crystal grown time is reduced to 5 h and a high power conversion efficiency of ca. 16% is achieved. We anticipate that the rapid crystal growth method will benefit the future mass production of single-crystal perovskite solar cells.

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The purpose of this study is to fabricate the tungsten trioxide (WO3) nanorods (NRs) films by hydrothermal process and investigate the relationship between microstructure morphologies and electrochromic properties. It was found the optimal process parameters were the Na2WO4 concentration of 0.25M, the pH of 2.2, the capping agent of 0.0075mol, the growth temperature of 180oC and the growth time of 2 hr. It revealed the optimal process parameters samples possessed best electrochromic properties is due to having high specific surface area and porous structure which resulted in more easily react with lithium ion (Li+) in the electrolyte.

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In this study, a couple of WO3/DSSC tandem photoanode and Cu2O/ZnO photo-cathode irradiated with simulated sunlight for photo-electrochemical (PEC) hydrogen generation application was demonstrated. WO3 nanorods (NRs) was connected to the Pt-counter electrode of a dye-sensitized solar cell (DSSC), and dye-sensitized TiO2 of the DSSC was wired to the hetero-nanostructure composed of P-type Cu2O nanowires (NWs) and N-type ZnO nanoparticles (NPs). Experimental results revealed that the solar to hydrogen conversion efficiencies of Cu2O and Cu2O/ZnO-10s (ZnO NPs deposited for 10s) were about 3.51% and 5.63%, respectively. This system could be considered to perform artificial photosynthesis application in our future research.

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In-organic precursor (titanium tetraisopropoxide, TTIP) was used to form TiO2 films, and the effects of the deposition times on the characteristic and microstructure had been investigated. Moreover, the atmospheric pressure (AP) plasma system was used to study the core deposition technology of high specific surface area and well-aligned TiO2 nano-dendrites (TNDs) films served as photo-anode for the DSSCs applications. Up to date, the optimal TNDs films with an extra high deposition rate of ~1m/min revealed the best photo-conversion efficiency of 12.08% for adopting N719 dye and iodine ion electrolyte, under illumination of simulated AM1.5 solar light (100 mWcm−2).

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Hydrogenated amorphous silicon thin films possess a tunable bandgap. By adjusting the bandgap, these thin films can selectively absorb light of different wavelengths. Annealing can adjust the bandgap of hydrogenated amorphous silicon thin films. As the annealing temperature increases, the Si-H bonds, Si-H2 bonds, and Si-H2 ratio decrease, leading to a smaller bandgap of the film. As the bandgap decreases, the optical properties of the film increase, and the absorption wavelength shifts towards longer wavelengths.

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In this work, Ge was doped into Cu2ZnSnS4 (CZTS) absorber to replace Sn, and after Ge doped into absorber layer, it can boost the grain size. And the Cu2ZnSn1-xGexS4 (CZTGS) sample has larger band gap (1.32 eV) than the CZTS sample (1.28 eV). In this work, all the precursors were used thermal evaporation to fabricate, and Ge was doped on the top of precursors. After the sulfurization, CZTS and CZTGS were formed respectively. All the samples were used thermal field emission scanning electron microscope (FE-SEM) and UV-VIS-NIR to investigate the structure and optical properties.

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In this work, we report a lead-free MASnI3 perovskite photodetectors prepared by inverse temperature crystallization method. The MASnI3 perovskite photodetectors in this experiment has the highest photocurrent value in green region among the five monochromatic lights with a photocurrent of 2 μA. The manufacturing process is relatively simple, so it can be easily manufactured.

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In this research, silicon nitride and silicon oxynitride films are prepared by a combined high-power impulse and closed field unbalanced magnetron sputtering (HIPIMS/CFUBMS) deposition technique. A multilayer AR coating with AF films is deposited on one side sapphire. Its average transmittance is 90.6 % and its Mohs hardness is larger to 8.The color coordinate ΔC is 2.7 and the contras ratio increased from 1.7 to 2.7.

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We reported a cost-effective method for fabricating a self-assemble micro-lens array film (MAF) of SiO2 particles to enhance the efficiency and angular spectral stability of organic light emitting diodes (OLEDs). The film is fabricated through spin-coating technique,resulting in a high filling factor of 92.99%. The SiO2 MAF exhibits exceptional optical properties, with an impressive average transmittance of 94.9% and a haze of 93.98% in the ultraviolet-visible range. Compared to reference OLEDs, OLED with MAF demonstrated an increase in luminescence in angular measurement, reaching an enhancement of 25.6%.Furthermore, both the current and power efficiencies were enhanced by 17%.


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In this research, leveraging the attributes of germanium/germanium oxide thin films, pulsed magnetron sputtering apparatus was employed to generate high and low refractive index thin films, characterized by commendable properties across diverse gas parameters. Following the input of these parameters into Macleod thin-film software for computation, we designed multi-layered film arrangements targeting center wavelengths of 1550nm and 1350nm. This approach facilitated the creation of filters featuring center wavelength transmittance exceeding 80%, while concurrently minimizing coating time via the application of low-thickness filters.

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In this work, the influence of different deposition powers and annealing temperatures on the optical and electrical properties of indium zinc oxide (IZO) films was studied. Experimental results showed that, IZO films deposited with a power of 125W and annealing at 300°C exhibited the best electrical and optical properties, with the lowest resistivity of 1.43×10-3 Ω·cm, the highest carrier mobility of 11.12 cm2/V-s, and a carrier concentration of 4.61 ×1020 cm-3. The average transmittance in the wavelength range of 400 to 800 nm was 82.57%, and the optical energy gap was determined to be 3.372 eV

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