Session Index

Cu2O nanowires (NWs) grown by the hybrid process of atmospheric pressure plasma oxidation at 300°C for 10 min and thermal oxidation at 300°C for 50 min, revealed the optimal photocurrent density was -2.92 mA/cm2 measured at 0 V (RHE). The formation of PN junctions hetero-structure resulted in the effective and rapid separation of electron-hole pairs occurred on the electrode surfaces and enhanced the redox reactions. The deposition of ZnO nanoparticles (NPs) on the surface of Cu2O NWs with optimal photocurrent density was -7.72 mA/cm2 measured at 0 V (RHE). The solar-to-hydrogen (STH) conversion efficiency was 1.73% for ZnO/Cu2O photocathode.

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We discuss the effect of the perovskite film in different doping ratios of the cesium
chloride (CsCl) and methylamine hydrochloride (MACl). Finally, the solar cell prepared with
Cs0.1MA0.09FA0.81PbCl0.14I2.86 as the active layer has the best photovoltaic characteristics, and
its PCE reaches 18.6%.

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In this study, the effect of different oxygen partial pressures on ZnWO4 based RRAM devices was investigated. The results show that films with excessive partial pressure exhibit lower HRS/LRS ratios as well as centralized formation voltage. These outcomes point to a strong correlation between the oxygen partial pressure and the filament formation mechanism.

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This paper investigates the hybrid deposition of E-gun evaporation and RF magnetron sputtering for molybdenum trioxide (MoO3) doped titanium dioxide (TiO2) used on complementary electrochromic devices. The main electrochromic layer consists of MoO3 doped with TiO2, and the auxiliary electrochromic layer is made of nickel oxide (NiO). X-ray diffraction (XRD) analysis confirmed the formation of a beneficial orthorhombic phase α-MoO3, which contributes to the electrochromic effects. However, the transmittance variation (ΔT) of device can reach 61.3% at 550nm. The response times for coloring (tb) and bleaching (tc) are 8 seconds and 9 seconds, respectively.

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The (InxGa1-x)2O3 films with different In/Ga ratio and HCl content in precursor were prepared by spray pyrolysis at 450oC. The film optical bandgap and temperature dependent electric conductivity were characterized. The electrical conductivity with reduced defect-related activation energy were characterized for the films with the increased In/Ga ratio in precursor. The reduced electrical conductivity was characterized for sample InGaO3 after 600oC anneal process prepared with 10% HCl in precursor. Shallow defects formed for sample after 700oC anneal process.the conductivity of the (InxGa1-x)2O3 with different activation energy for the film prepared by spray pyrolysis were characterized.

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This study controlled the number of cancer cells at 2,500, 5,000, 7,500, 10,000, and the volume of the solution to be tested was set at 20 µl. The P-type biosensor has the most significant effect on intracellular GSH response, the measured The magnitude of the transient photocurrent will decrease with the number of cancer cells and the degree of canceration. According to the experimental results, the degree of canceration and the kind of cancer cells in each tube of pleural effusion can be quickly judged, and the regression analysis coefficient of determination.

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This study investigates the benefits of front selective area TOPCon in industrial bifacial TOPCon solar cells, employing Sentaurus TCAD for optical ray tracing and Quokka2 for electrical simulations. Our simulations project a potential efficiency of approximately 25.2%, guided by optimal parameters from scholarly sources and the industrial standards reported in ITRPV 2023. Notably, a 25% efficiency is also attainable with a 150 μm wide selective TOPCon area, rendering this process more cost-effective and suitable for mass production.

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In the study, we propose hybrid counter electrodes to improve the performance of dye-sensitized solar cells. The counter electrode with a concentration of 0.130 mg/ml of nickel nanowire array on the nickel sulfide film achieved the highest conversion efficiency of 8.94%. This efficiency was 1.57% higher than that of the traditional counter electrode material platinum in dye-sensitized solar cells. There is great potential to replace platinum as the electrode material in dye-sensitized solar cells, which would reduce costs and further advance the commercialization of dye-sensitized solar cells in the future.

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This study demonstrates high-quality GaN thin film deposition on Si(111) substrates via RF reactive magnetron sputtering. An AlN buffer layer alleviates lattice mismatch between silicon and GaN. Sputtering parameters optimization enhances GaN film quality. X-ray diffraction reveals dominant (002) phase (2θ ~ 34.5°) with narrow 0.96° FWHM in sputter-deposited GaN. At 10 K, photoluminescence spectra exhibit a 3.387 eV (~366 nm) emission peak.

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In this study, plasma-enhanced atomic layer deposition (PEALD) method is used to deposit anti-reflection film on PMMA substrate. The oxidation method of oxygen mixed with argon plasma is used at low temperature process 70ºC. The TiO2 anti-reflective film can be extended to 998 hours without insertion into the inhibition layer under the condition of temperature 85°C and humidity 85%RH.

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In this study, β-Gallium Oxide was grown on off-angled sapphire substrates by hydride vapor phase epitaxy. The crystal quality is optimized by changing the experimental conditions and annealing. And confirm through the instrument whether off-angle sapphire and
annealing are helpful for gallium oxide epitaxy. Single crystal film of β-Ga2O3 with a full-width half maximum of XRD rocking curve is 0.25 °

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We demonstrate the fabrication of an Al/SiO2/Si MIS device and the characterization of its photocurrent characteristics. An electron beam evaporation was used to deposit the amorphous type SiO2 dielectric layer. It is able to achieve a maximum responsivity of 0.03 A/W at a UV wavelength of 300 nm ~ 350 nm and with strong rejection against white light. Photocurrent of the MIS device with different thicknesses of SiO2 layer was studied. A photocurrent mechanism based on the photo-excited defect states of the amorphous SiO2 and the drifting mechanism was used to explain the results.

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The optical and surface properties of the polydimethylsiloxane layers were investigated using a normal incidence spectrophotometer, variable incidence angle spectroscopic ellipsometry, and a contact angle measurement system after the surfaces of the polydimethylsiloxane layers were treated with low pressure oxygen plasma.

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The Ga2O3 films with different Sn doping (Ga2O3:Sn) were prepared by spray pyrolysis at 450oC on p-Si substrate. The film deposition rate and electric conductivity for the Ga2O3:Sn films was studied. With post 800oC anneal process, enhanced film conductivity and small film thickness reduction were characterized. Film with enhanced conductivity 0.029 Scm-1 was characterized after 800oC anneal process for the film with 3% Sn doping in precursor. The post anneal process shows an effective method for conductivity enhancement for the Ga2O3:Sn film deposited by spray pyrolysis.

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In this paper, the pulsed laser deposition method was used to grow the copper oxide film on the C-plane sapphire substrate. The experiment used the laser light source Nd:YAG laser, and the wavelength of the quadrupled frequency is 266nm, the pulse width was <10ns, and the pulse frequency is 10HZ. X-ray diffraction (XRD) is used to understand the quality of film growth;ultraviolet-visible spectrometer (UV-VIS) is used to measure the transmission spectrum of the film, and then the film is placed in methylene blue solution for photocatalytic experiments to understand the effect of its photocatalyst.

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This study produced Cu-doped CrO2 thin films through reactive magnetron sputtering at deposition pressures from 3 to 7 mTorr. Following deposition, rapid thermal annealing (RTA) occurred at 600 °C for 5 minutes. The investigation encompassed structural, optical, and electrical analyses. X-ray diffraction (XRD) revealed distinctive CuCrO2 phase peaks at (006) and (012) orientations. Notably, the 3 mTorr-deposited film showcased exceptional attributes, including 76% transmittance in the visible range and 12.46 Ω-cm resistivity. These findings hold significance for advancing transparent UV photodetectors.

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We deposited Cu-Doped CrO2 (CuCrO2) delafossite thin films on quartz substrates using reactive RF magnetron sputtering. Films were made from a copper-chromium metal alloy target with a 1:1 mass ratio, employing oxygen and argon as sputtering gases. X-ray diffraction (XRD) confirmed well-defined CuCrO2 crystal structures. Transmittance measurements revealed 65% transmittance in the 550 ~ 800 nm visible wavelength range. The films exhibited a minimum resistivity of 3.0 Ω-cm and a high carrier concentration of 3.0×1019 cm-3.

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In this study, Yttrium oxide (Y2O3) and yttrium aluminum garnet (YAG) were coated on B270 substrates using an ion-assisted electron gun (E-gun) evaporation system. Different coating parameters were investigated, including the use of ion sources. A microwave plasma etching machine was then used to etch the thin film coatings under different parameters, while fixing the microwave power and gas ratio. The white light interferometry was used to measure the etching thickness. The results showed that the corrosion resistance of YAG is better than Y2O3.

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This work presents a four-layer anti-reflection coating (ARC) design using SiO2 and Ta2O5 materials with Essential Macleod software. The four-layer anti-reflection coatings were prepared by ion-beam assisted deposition and electron beam evaporation system. The proposed four-layer anti-reflection coating achieved a transmittance of 99% in the visible light range and exhibited a compressive residual stress of 33 MPa.

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In this research, we prepared SZTO thin-film transistors using magnetron sputtering. By controlling the sputtering power of silicon oxide, we adjusted the number of free carriers and defects to modify the electrical characteristics of the thin-film transistors. The results showed that the sputtering power of silicon oxide had a significant influence on the drain current leakage, decreasing from 7.88×10^(-9) to 3.71×10^(-11), due to the suppression of the oxygen vacancies.

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An ITO-free electrochromic bleached black coating was fabricated from a single W target at room temperature by a pulsed dc magnetron sputtering system. The black coating consisted of three pairs of double-layer films, and each pair included an electrochromic WO3 layer and an electrode W layer.

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ZnO is an inorganic compound with good optical properties. It has high transmittance in the visible wavelength range and can be used for transparent conductive films. ZnO has a wide bandgap, making it suitable for various applications like thin film transistors and solar cells. Doping Ga content improved its conductivity. Achieving p-type ZnO is challenging due to its chemical structure, but Ga-N co-doping successfully produced a p-type transparent conductive film with high transmittance and excellent electrical properties: low resistivity, high mobility, and high carrier concentration.

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Organic solar cells (OSCs) are devices that converts solar energy into electricity,
and photoelectric conversion efficiency (PCE) is one of the important parameters to evaluate
the performance of OSCs. We propose a new idea for the optical structure design of OSCs in
order to improve its PCE

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In this experiment, we employed a cost-effective and easily-prepared method, known as the ultrasonic spray pyrolysis, to synthesize the TiO2 photocatalysis. The goal of this study was to investigate the influence of silver-doped titanium dioxide thin films on the degradation of methylene blue. The experimental results revealed that the degradation rate of methylene blue increased dramatically from 22% to 57% as Ag was doped

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With the rapid development of semiconductors, it’s a new trend to make research on new materials and new structure memories as it becomes more difficult to shrink the device size. In the study, we fabricate a new generation memory, or Resistive Random Access Memory (RRAM), with MgSiO3 switching layer. This study investigates the impact of different film densities on MgSiO3 based RRAM devices. The results demonstrate that films with higher densities exhibit larger Forming voltage as well as a higher HRS/LRS ratio. These findings suggest a significant correlation between the mechanism of conductive filament formation and film density.

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